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Silicon oxide-based memory and three-dimensional nanoporous system for ultrahigh density storage
왕건욱 한국공업화학회 2016 한국공업화학회 연구논문 초록집 Vol.2016 No.0
We have previously demonstrated a unipolar nonvolatile memory with silicon oxide (SiOx) for the first time. SiOx is among the most common and low-cost material in the semiconductor industry, which can be formed by various ways. These SiOx memory elements have shown desirable performance metrics such as excellent switching behavior by conducting nanofilaments forming at a sub-5-nm scale. We fabricated highly transparent memory and 1-kilobit one diode-one resistor crossbar devices using SiOx material, which show low energy consumption (~10(-3) J/Gbit), multi-bits ability, and high ON-OFF ratio (up to 10(7)) without a compliance current. As the major topic, I will focus on the switching properties and the mechanism of SiOx memory and its nanoporous device platform, and present the recent approach for ultra-high density of memory array.
Seung-Hwan Oh,Hyejung Choi,왕건욱,김동유,황현상,이탁희 한국물리학회 2010 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.56 No.1
The effects of Ag nanoparticles on the switching behavior of polyfluorene-based organic nonvolatile memory devices were investigated. Polyfluorene-derivatives (WPF-oxy-F) with and without Ag nanoparticles were synthesized, and the presence of Ag nanoparticles in Ag-WPF-oxy-F was identified by transmission electron microscopy and X-ray photoelectron spectroscopy analyses. The Ag-nanoparticles did not significantly affect the basic switching performances, such as the currentvoltage characteristics, the distribution of on/off resistance, and the retention. The pulse switching time of Ag-WPF-oxy-F was faster than that of WPF-oxy-F. Ag-WPF-oxy-F memory devices showed an area dependence in the high resistance state, implying that formation of a Ag metallic channel for current conduction.