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원자층 증착을 이용한 고 유전율 Al2O3 절연 박막 기반 Indium Zinc 산화물 트랜지스터의 저전압 구동
엄주송,김성진 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
The indium zinc oxide transistors with Al2O3 as gate dielectric have been investigated. To improve a permittivity in ambient a dielectric layer, Al2O3 is grown by atomic layer deposition directly onto the substrates. Then, we prepared indium zinc oxide (IZO) semiconductor solutions with 0.1 M indium nitrate hydrate [In(NO3) 3·xH2O] and 0.1 M zinc acetate dehydrate [Zn(CH3COO)2·2H2O] as precursor solutions, and the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of 0.90 cm2/Vs in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer deposited high-k Al2O3 as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays. 산화물 반도체를 저전압에서 구동시키기 위해서 고 유전율인 Al2O3를 ALD롤 증착한 용액 공정 기반의 IZO 산화물 트랜지스터를 제작하여 전기적인 특성을 평가하였다. Al2O3를 증착한 소자가 기존의 SiO2 절연막 소자보다 gate bias에 의한 전기적 신뢰성 평가 시 문턱전압이 0 V에 가깝고, 낮은 전압에서도 기존과 같은 반도체 특성을 보이며, on/off ratio도 높게 나타나는 것을 확인할 수 있었다.
원자층 증착을 이용한 고 유전율 Al<sub>2</sub>O<sub>3</sub> 절연 박막 기반 Indium Zinc 산화물 트랜지스터의 저전압 구동
엄주송,김성진,Eom, Ju-Song,Kim, Sung-Jin 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
IZO transistors with $Al_2O_3$ as gate dielectrics have been investigated. To improve permittivity in an ambient dielectric layer, we grew $Al_2O_3$ by atomic layer deposition directly onto the substrates. Then, we prepared IZO semiconductor solutions with 0.1 M indium nitrate hydrate [$In(NO_3)_3{\cdot}xH_2O$] and 0.1 M zinc acetate dehydrate [$Zn(CH_3COO)_2{\cdot}2H_2O$] as precursor solutions; the IZO solution made with a molar ratio of 7:3 was then prepared. It has been found that these oxide transistors exhibit low operating voltage, good turn-on voltage, and an average field-effect mobility of $0.90cm^2/Vs$ in ambient conditions. Studies of low-voltage driving of IZO transistors with atomic layer-deposited high-k $Al_2O_3$ as gate dielectric provide data of relevance for the potential use of these materials and this technology in transparent display devices and displays.
NR/MG Latex 블랜드필름의 제조 및 그의 기계적특성
김공수,박준하,엄주송,김수종 한국고무학회 1994 엘라스토머 및 콤포지트 Vol.29 No.1
Methylmetharylate grafted latex(MGL) was prepared by emulsion graft copolymerization of methyl methacrylate onto natural rubber latex(NRL) by using t-butyl hydroperoxide and tetraethylene pentamine in an aqueous medium. Blending of MGL and NRL with different mixing ratio carried out and viscosity and particle size distribution of blend latex were determined. It was found that the optimum condition of mature time, vulcanizing temperature and time for preparation of blend latex films were investigated. latex films prepared by dipping process were meaured. As the result, blend latex(NR-d-MG) films obtained from two-dipping system were more excellent than NR and MG film obtained from one-dipping system.
Dipping 법에 의한 천연고무와 그라프트 라텍스 블렌드 필름의 표면특성
김공수,박준하,엄주송 ( Jun Ha Park,Kong Soo Kim,Ju Song Eum ) 한국공업화학회 1994 공업화학 Vol.5 No.6
천연고무 라텍스(NRL)와 메틸메타 크릴레이트가 그라프트된 라텍스(MGL)를 각종 첨가제와 혼합하여 dipping 공정으로 가황된 NR 및 블렌드 필름을 제조하였다. NR 필름 제조의 최적조건을 규명하기 위하여 숙성시간에 따른 팽윤도, 인장강도 및 110℃에서 가황시간의 변화에 따른 기계적 특성을 비교하였다. 필름 표면의 구조 및 미끄럼성을 조사하기 위하여 접촉각 및 정·동마찰계수를 측정한 결과, 접촉각은 MGL의 블렌드 비율이 증가할수록 감소하였고, 정 및 동마찰계수는 NR 필름에 비하여 NR/MG 과 NR-d-MG 필름이 현저히 감소하여 표면 미끄럼성이 향상됨을 알 수 있었다. The vulcanized NR and blend films were prepared with mixing of natural rubber latex (NRL) and methyl methacrylated grafted latex(MGL) with various additives by dipping process. It was investigated the basic properties of vulcanized NR films that is optimum condition of the mature time, swelling degree, cure time at 110℃, and measured the mechanical properties of tensile strength and elongation of its condition. In order to identify the surface structure and the slip properties of blend films, contact angles and static and kinetic friction coefficient were measured. Contact angles were decreased with increment of blend ratio of MGL, and static and kinetic friction coefficient were decreased rapidly for the NR/MG and NR-d-MG films than for the NR films. From the results, NR/MG and NR-d-MG films has slip`s reinforcement in skin contact surface with increased of blend ratio of MGL.
NR / CR 라텍스 블렌드 필름의 제조 및 물리적 특성
김공수,박주하,엄주송 ( Kong Soo Kim,Jun Ha Park,Ju Song Eum ) 한국공업화학회 1996 공업화학 Vol.7 No.4
천연고무 라텍스(NRL)와 각종 첨가제를 배합 숙성하여 NR 필름을 제조하였고, 클로로프렌고무 라텍스(CRL)를 일정한 비율로 블렌드하여 NR/CR 필름을 제조하였다. 이들 필름의 전가류 시간에 따른 팽윤도와 기계적 성질의 변화를 측정한 결과, 팽윤도 80∼85%, 전가류 시간 48∼60hrs등에서 가장 우수하였고, CRL의 블렌드 비율이 증가함에 따라 인장강도는 감소하고 신장율은 증가하는 경향을 나타내었다. 제조공정을 달리하여 제조한 시편의 기계적특성을 비교한 결과, 1회 디핑법을 사용한 NR/CR 필름의 인장강도, 인열강도는 2회 디핑한 NR-d-CR 필름보다 더 우수하였다. 이들 시편의 표면을 SEM으로 관찰한 결과, CRL의 블렌드 비율이 증가할수록 필름 표면의 벌크한 집합체가 증가되는 것으로 보아 상분리가 일어났음을 관찰할 수 있었다. The NR films were prepared with mixing of natural rubber latex(NRL) with various additives, and NR/CR films were prepared by blend ratio of chloroprene rubber latex(CRL). The swelling degree and the mechanical properties of these films were measured according to the precure time. As a result, optimum condition were showed the swelling degree : 80∼85%, precure time : 48∼60hrs., and tensile strength was reduced but elongation was increased as increasing the blend ratio of CRL. On the mechanical properties of films prepared by different dipping process in these optimum condition, the tensile strength and tear strength of NR/CR films by one dipping process are better than NR-d-CR films by two dipping process. The surface of these films were observed with scanning electron microscopy(SEM). It was found that phase separation was occured as increasing the blend ratio of CRL.
급속열처리 기술을 이용한 rutile 구조를 가지는 TiO2-X/TiO2 기반의 저전압 저항 스위칭 메모리에 관한 연구
허관준 ( Kwan Jun Heo ),엄주송 ( Ju Song Eom ),김성진 ( Sung Jin Kim ) 대한금속재료학회(구 대한금속학회) 2015 대한금속·재료학회지 Vol.53 No.9
The resistive switching properties driven by low voltage in a nano-scale resistiverandom- access-memory device composed of Al(top)/TiO2-X/TiO2/Al(bottom) were investigated in this paper. TiO2-X and TiO2 layers were deposited by the atomic layer deposition method and a TiO2-X layer was added during the process of rapid-thermal-annealing at 600 °C to induce oxygen vacancies. Structural analyses by using X-ray diffraction suggested that the TiO2-X film annealed at this temperature changes from an amorphous to a rutile phase. The oxygen vacancies of the TiO2-X region acted as traps for electrons and led to memory behavior. The device exhibited resistive-random-access-memory behavior consistent with resistive switching properties such as a high current on/off ratio greater than 1000:1, low-voltage driving less of han 0.5 V, and nonvolatility for over 1.0 × 105s.
용액 공정 기반의 인듐 아연 산화물 트랜지스터의 PMMA 보호막 여부에 따른 신뢰성 평가
허관준 ( Kwan Jun Heo ),엄주송 ( Ju Song Eom ),조현아 ( Hyeonah Jo ),최성곤 ( Seong Gon Choi ),정병준 ( Byung Jun Jung ),김성진 ( Sung Jin Kim ) 대한금속재료학회(구 대한금속학회) 2016 대한금속·재료학회지 Vol.54 No.4
We investigated poly(methyl methacrylate) (PMMA) passivation of solution-processed indium zinc oxide (IZO) thin-film transistors (TFTs). PMMA provides solution-processability and good barrier characteristics against environmental elements such as water and oxygen. The PMMA passivation layers protect the IZO active layer of the TFTs without deteriorating their performance during gate bias stress measurements under ambient conditions, and improve their electrical properties by decreasing leakage current. Moreover, the potential to safely manipulate IZO-TFTs after PMMA passivation was proven by realizing a simple n-channel resistive-load inverter.