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정석훈,서헌덕,박범영,박재홍,정해도,Jeong, Suk-Hoon,Seo, Heon-Deok,Park, Boum-Young,Park, Jae-Hong,Jeong, Hae-Do 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.3
Copper has been used as an interconnect material in the fabrication of semiconductor devices, because of its higher electrical conductivity and superior electro-migration resistance. Chemical mechanical polishing(CMP) technique is required to planarize the overburden Cu film in an interconnect process. Various problems such as dishing, erosion, and delamination are caused by the high pressure and chemical effects in the Cu CMP process. But these problems have to be solved for the fabrication of the next generation semiconductor devices. Therefore, new process which is electro-chemical mechanical polishing(ECMP) or electro-chemical mechanical planarization was introduced to solve the technical difficulties and problems in CMP process. In the ECMP process, Cu ions are dissolved electrochemically by the applying an anodic potential energy on the Cu surface in an electrolyte. And then, Cu complex layer are mechanically removed by the mechanical effects between pad and abrasive. This paper focuses on the manufacturing of ECMP system and its process. ECMP equipment which has better performance and stability was manufactured for the planarization process.
컨디셔닝 공정에 의한 연마 패드 형상 변화의 기구학 해석에 관한 연구
이상직(Sang-Jik Lee),서헌덕(Heon-Deok Seo),오지헌(Ji-Heon Oh),김형재(Hyoung-Jae Kim),정해도(Hae-Do Jeong) 한국기계가공학회 2007 한국기계가공학회 춘추계학술대회 논문집 Vol.2007 No.-
The pad is one of the most important components in the polishing process. The mechanical properties of the pad determine the removal rate and the polishing characteristics. The asperities on the pad surface involve with the mechanical removal from the workpiece surface and the pad profile is affecting the flatness across the workpiece. However, as the polishing is going on, the pad asperities are gradually worn down and the glazed area increases. The removal rate is reduced and the polishing quality becomes poorer due to the pad surface degradation. Therefore, the pad conditioning process is necessary to regenerate the pad surface by breaking up the glazed. The most common conditioning method is to use a rotating disk coated one side with diamond abrasives. The pad surface is restored by the pad cutting of the diamond abrasives. The accumulation of these cutting by the diamond conditioning is unfortunately affecting the profile of the polishing pad, which results in the unstable polishing results. This paper describes the kinematical model for the pad wear and analyzes the effects of kinematical and geometrical parameters in the pad conditioning process using the diamond disk. The kinematical modeling results were correlated with the actual pad profile induced by the pad conditioning.
CMP 패드 강성에 따른 산화막 불균일성(WIWNU)에 관한 연구
박기현,정재우,박범영,서헌덕,이현섭,정해도,Park, Ki-Hyun,Jung, Jae-Woo,Park, Boum-Young,Seo, Heon-Deok,Lee, Hyun-Seop,Jeong, Hae-Do 한국전기전자재료학회 2005 전기전자재료학회논문지 Vol.18 No.6
Within wafer non-uniformity(WIWNU) improves as the stiffness of pad decrease. We designed the pad groove to study of pad stiffness on WIWNU in Chemical mechanical polishing(CMP) and measured the pad stiffness according to groove width. The groove influences effective pad stiffness although original mechanical properties of pad are unchanged by grooving. Also, it affects the flow of slurry that has an effect on the lubrication regime and polishing results. An Increase of the apparent contact area of pad by groove width results in decrease of effective pad stiffness. WIWNU and profile of removal tate improved as effective pad stiffness decreased. Because grooving the pad reduce its effective stiffness and it makes slurry distribution to be uniform. Futhermore, it ensures that pad conforms to wafer-scale flatness variability. By grooving the top pad, it is possible to reduce its stiffness and hence reduce WIWNU and edge effect.
조성환,김형재,김호윤,서헌덕,김경준,정해도,Cho, Sung-Hwan,Kim, Hyoung-Jae,Kim, Ho-Youn,Kim, Heon-Deok,Seo, Kyoung-Jun,Jeong, Hae-Do 대한기계학회 2001 大韓機械學會論文集A Vol.25 No.10
This study presents the possibility of scratch reduction on wafer in CMP by applying the ultrasonic and megasonic energy into the slurry which might contain large abrasive particles. Experiments were conducted to verify the dispersion ability of agglomerated particles by applying ultrasonic, megasonic waves and analyze the particle distribution of used slurry in case, of sonic energy assisted or none. And the dispersion stability of megasonic waves was investigated through the experiment of stability of the dispersed slurry, Finally, to confirm that the distribution of particles in slurry by ultrasonic waves was actually related to scratches on wafer when CMP was done, tungsten blanket wafer was processed, by CMP to compare and investigate scratches on wafer.