http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Unipolar Resistive Switching of EuxOy Polycrystalline Films
박배호,김상훈,최진식,이장원,JaeGwan Chung,서선애 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.53 No.2
Polycrystallized EuxOy thin films show unipolar resistive switching. The ratios of the resistance values of the high-resistance state to those of the low-resistance state are as large as 108. The deposited EuxOy thin films show mixed phases, Eu2O3 and Eu3O4. The relative concentration of the phases could be controlled by using the oxygen gas flow rate during growth. A high oxygen concentration leads to broadening the distribution of the switching voltages, inducing transitions between the high-resistance state and the low-resistance state. We observe that the distribution of the switching voltage from the high-resistance state to the low-resistance state (VSET ) is smaller than or comparable to that of the switching voltage inducing the opposite transition (VRESET ) in well-controlled EuxOy thin films.
Park, Bae Ho 建國大學校基礎科學硏究所 2001 理學論集 Vol.26 No.-
Fatigue problems were investigated for thin films of ferroelectric Bi-layered perovskite materials, that is, SrBi_2Ta_2O_9 and Bi_4Ti_3O_12. The bulk samples of the materials were sintered by solid reaction methods using constituent powders. Using the bulks as target materials, thin films were grown on various substrates by pulsed laser deposition methods. Many analytical methods were performed in order to find out the mechanism of imprint and fatigue problems in such thin films.
Electrode Dependence of Resistance Switching in NiO Thin Films
김동욱,박배호,이장원,D. C. Kim,신동수,R. Jung,S. Seo,장서형,X. S. Li 한국물리학회 2007 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.51 No.II
We report on the resistance switching behavior of NiO thin films grown on Pt bottom electrodes, with top electrodes of Pt, Au and Ni. NiO/Pt films with all the top electrodes show reversible switching from high-resistance state (HRS) to low-resistance state (LRS) and {\it vice versa} during unipolar current-voltage ($I-V$) measurements. The resistance switching ratio of the Au/NiO/Pt structure is much smaller than those of others. The HRS $I-V$ curve of the Au/NiO/Pt structure is linear, while those of Pt/NiO/Pt and Ni/NiO/Pt structures are nonlinear. This result manifests the role of the top electrode material in the resistance switching behavior of the NiO thin films.
Shape-Control of Strontium Titanate Nanostructures by a Surface-Capping Soft Chemical Process
강성웅,박배호,Inrok Hwang,Jinsik Choi,윤규식,Sahwan Hong,안상정,Yong-Il Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.2
A surface-controlling soft chemical process is reported for tuning the morphologies of strontium titanate (SrTiO₃) nanostructures. The conventional surfactant-free soft chemical process produced polycrystalline SrTiO₃ nanoparticle aggregates generated by the dissolution-growth reaction. Alternatively, in order to synthesize single-crystal SrTiO₃ nanorods, we employed the surface-capping soft chemical process using a polyacrylic acid (PAA) polymer capping-reagent. The single-crystal SrTiO₃ nanorods prepared using PAA were observed to have facets with different diameters from a few nm to ~200 nm, lengths up to several μm, rectangular cross-sections, and crystal-axe perpendicular to the growth axis of the nanorods. A high-yield of nanorods over 90% was also obtained in the total volume of the product.
Polycrystalline NiO Thin Films Applicable to Nano-Storage Media
Inrok Hwang,박배호,Dongchul Kim,Inkyung Yoo,Jinho Lee,Jinsik Choi,Jinsoo Kim,Sahwan Hong,Sangho Jeon,Sanghoon Kim,Sunae Seo,강성웅,Yong-Il Kim 한국물리학회 2008 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.52 No.-
We have investigated local electrical properties of NiO thin films applicable to nano-storage devices. Polycrystalline NiO thin films were deposited on Pt/Ti/SiO2/Si substrates by dc magnetron reactive sputtering methods. X-ray diffraction (XRD) data have shown that polycrystalline NiO films without second phases were grown on the substrates. We also observed root mean square roughness of 1.9 nm in the 15μm × 15 μm area of a NiO film by using atomic force microscopy (AFM) mode. Using conducting atomic force microscopy (C-AFM) mode, we measured the change in local current distribution and found that the grown NiO films exhibited excellent resistance switching behavior at the nanoscale and good retention behavior of the written nano-sized domains. Moreover, we investigated the relation between pulse height and bit size. It was possible to write 8×8 bits in 4×4 μm² area and to store digital information corresponding to several Gbit/inch². Therefore, we successfully showed the feasibility of NiO films as media for nano-storage devices. We have investigated local electrical properties of NiO thin films applicable to nano-storage devices. Polycrystalline NiO thin films were deposited on Pt/Ti/SiO2/Si substrates by dc magnetron reactive sputtering methods. X-ray diffraction (XRD) data have shown that polycrystalline NiO films without second phases were grown on the substrates. We also observed root mean square roughness of 1.9 nm in the 15μm × 15 μm area of a NiO film by using atomic force microscopy (AFM) mode. Using conducting atomic force microscopy (C-AFM) mode, we measured the change in local current distribution and found that the grown NiO films exhibited excellent resistance switching behavior at the nanoscale and good retention behavior of the written nano-sized domains. Moreover, we investigated the relation between pulse height and bit size. It was possible to write 8×8 bits in 4×4 μm² area and to store digital information corresponding to several Gbit/inch². Therefore, we successfully showed the feasibility of NiO films as media for nano-storage devices.