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박계춘,조재철,류용택 ( Gye Choon Park,Jae Cheol Cho,yong Tek Yoo ) 한국센서학회 1993 센서학회지 Vol.2 No.1
CdS and Se thin films were deposited on slide glass by EBE method respectively and surface morphology, crystal structure, electrical and optical properties were investigated by substrate temperature and annealing. The deposited CdS film was well fabricated with cubic structure at substrate temperature of 150℃, Se film was deposited with noncrystal structure until substrate temperature of 100℃, but Se film was grown with monoclinic structure at substrate temperature of 150℃. And so. after annealing at 150℃ for 15min, noncrystalline Se was proved to be hexagonal structure. Finally, the maximum output of Se/CdS heterojunction at 5000 lux was 4 mW/㎠ and maximum spectral sensitivity was represented at 585nm.
태양전지용 MgF<sub>2</sub> 반사방지막 특성연구
박계춘(Park, Gye-Choon),양현훈(Yang, Hyeon-Hun),백수웅(Baek, Su-Ung),나길주(Na, Kil-Ju),소순열(So, Soon-Youl),이진(Lee, Jin),정해덕(Chung, Hae-Deok) 한국신재생에너지학회 2009 한국신재생에너지학회 학술대회논문집 Vol.2009 No.11
MgF₂ is a current material for the optical applications in the UV and deep UV range. Process variables for manufacturing the MgF₂ thin film were established in order to clarify optimum conditions for growth of the thin film depending upon process conditions, and then by changing a number of vapor deposition conditions and substrate temperature, Annealing conditions variously, structural and Optical characteristics were measured. Thereby, optimum process variables were derived. Nevertheless, modern applications still require improvement of the optical and structural quality of the deposited layers. In the present work, the composition and microstructure of MgF₂ single layers grown on slide glass substrate by Electro beam Evaporator(KV-660) processes, were analyzed and compared. The surface Substrate temperature having an effect on the quality of the thin film was changed from 200[?C] to 350[?C] at intervals of 50[?C]. and annealing temperature an effect on the thin film was changed from 200[?C] to 400[?C] at intervals of 50[?C]. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM.
Reaction Sintering 에 의한 ZnO : Al2O3 합성물의 구조 및 광학적 특성
강병모,박계춘,유용택 ( Byeong Mo Kang,Gye Choon Park,Yong Tek Yoo ) 한국센서학회 1998 센서학회지 Vol.7 No.3
ZnO and Al₂O₃ powder were weighed in 1 : 1 mole ratio and ball-milled in ethanol for 3 h. Dried mixture were pressed and then sintered at 900 ℃ ∼ 1200 ℃ for 3 h in vacuum(3 X 10^(-5) Torr). According to XRD, remnant ZnO and Al₂O₃ not converted to ZnAl₂O₄ were observed up to 1100℃, which were completely changed to ZnAl₂O₄ ternary compound at 1200. Optical bandgap is calculated at 4.75 eV. With increasing sintering temperature, PL spectrums shifted to shorter wavelengths and are appeared 430nm at 1200 ℃.
Cu/In 비에 따른 CuInS<sub>2</sub> 박막의 특성에 관한 연구
양현훈,박계춘,Yang, Hyeon-Hun,Park, Gye-Choon 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
[ $CulnS_2$ ] thin films were synthesized by sulfurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature $200^{\circ}C$. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_2$ thin films with non-stoichiometry composition. $CuInS_2$ thin film was well made at the annealed $200^{\circ}C$ of SLG/Cu/In/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. The compositional deviations from the ideal chemical formula for $200^{\circ}C$ material can be conveniently described by non-molecularity$({\Delta}x=[Cu/In]-1)$ and non-stoichiometry $({\Delta}y=[{2S/(Cu+3In)}-1])$. The variation of ${\Delta}x$ would lead to the formation of equal number of donor and accepters and the films would behave like a compensated material. The ${\Delta}y$ parameter is related to the electronic defects and would determine the type of the majority charge carriers. Films with ${\Delta}y>0$ would behave as p-type material while ${\Delta}y<0$ would show n-type conductivity. At the sane time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}cm^{-3},\;312.502cm^2/V{\cdot}s\;and\;2.36{\times}10^{-2}\;{\Omega}{\cdot}cm$, respectively.
태양전지 변환 효율 향상을 위한 근적외선 파장 변환 필름에 관한 연구
박병규,박계춘,이진,Park, Byung Kyu,Park, Gye Choon,Lee, Jin 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.11
The amount of electric power for photovoltaic power generation depends on the location of the power plant and the direction of solar cell. The solar cell controls the generation of solar power plants. Therefore, the structure of solar cell, manufacturing method, and optic technology were factors contributing to increased solar cell efficiency; however, the technical limit has been reached. Herein, we propose a new method to increase the solar cell efficiency using a wavelength conversion technology that converts ultraviolet and infrared rays, which are not effectively used in solar cells, into effective wavelength of solar cell. We used fluoride $Na(Ca)YF_4$ phosphor for wavelength conversion. Then, a wavelength-conversion fluorescent paste, prepared using an organic-silicon binder, was used to prepare a film that was applied to Si solar cells. It was confirmed that conversion efficiency improved by 5% or more.