TFT -LCD 구동 IC용 커패시터 내장형 DC-DC 변환기 설계

임규호,강형근,이재형,손기성,조기석,백승면,성관영,이용진,박무훈,하판봉,김영희,Lim Gyu-Ho,Kang Hyung-Geun,Lee Jae-Hyung,Sohn Ki-Sung,Cho Ki-Seok,Baek Seung-Myun,Sung Kwan-Young,Li Long-Zhen,Park Mu-Hun,Ha Pan-Bong,Kim Young-Hee 한국정보통신학회 2006 한국정보통신학회논문지 Vol.10 No.7

A non-overlap boosted-clock charge pump(NBCCP) with internal pumping capacitor, an advantageous circuit from a minimizing point of TFT-LCD driver IC module, is proposed in this paper. By using the non-overlap boosted-clock swinging in 2VDC voltage, the number of pumping stages is reduced to half and a back current of pumping charge from charge pumping node to input stage is also prevented compared with conventional cross-coupled charge pump with internal pumping capacitor. As a result, pumping current of the proposed NBCCP circuit is increased more than conventional cross-coupled charge pump, and a layout area is decreased. A proposed DC-DC converter for TFT-LCD driver IC is designed with $0.18{\mu}m$ triple-well CMOS process and a test chip is in the marking. 본 논문에서는 TFT-LCD 구동 IC 모듈의 소형화측면에서 유리한 DC-DC 변환기 회로인 펌핑 커패시터 내장형 비중첩 부스트-클락 전하펌프 (Non-overlap Boosted-Clock Charge Pump: NBCCP) 회로가 제안되었다 .2VDC 전압으로 스윙하는 비중첩 부스트-클럭의 사용으로 기존의 펌핑 커패시터 내장형 크로스-커플드 전하펌프에 비해 펌핑 단의 수를 반으로 줄일 수 있었고, 전하 펌핑 노드의 펌핑된 전하가 입력 단으로 역류되는 현상을 방지하였다 . 그 결과 제안된 펌핑 커패시터 내장형 비중첩 부스트-클럭 전하펌프 회로는 기존의 펌핑 커패시터 내장형 크로스-커플드 전하펌프에 비해 펌핑 전류가 증가하였고, 레이아웃 면적은 감소되었다. 제안된 TFT-LCD 구동 IC용 DC-DC 변환기 회로를 $0.18{\mu}m$ Triple-Well CMOS 공정을 사용하여 설계하고, 테스트 칩을 제작 중에 있다.

X-ray 이미지 센서용 싱글 픽셀 포톤 카운터 설계

백승면,김태호,강형근,전성채,진승오,허영,하판봉,박무훈,김영희,Baek, Seung-Myun,Kim, Tae-Ho,Kang, Hyung-Geun,Jeon, Sung-Chae,Jin, Seung-Oh,Huh, Young,Ha, Pan-Bong,Park, Mu-Hun,Kim, Young-Hee 한국정보통신학회 2007 한국정보통신학회논문지 Vol.11 No.2

본 논문에서는 디지털 의료 영상 및 진단 분야 그리고 산업용으로도 활용 가능한 싱글 포톤 계수형 영상센서를 $0.18{\mu}m$ triple-well CMOS(Complementary Metal Oxide Semiconductor) 공정을 사용하여 설계하였다. 설계된 Readout 칩용 싱글 픽셀은 디지털 X-ray 이미지 센서모듈을 간단화 하기 위해 단일 전원전압을 사용하였으며, Preamplifier의 출력 전압인 signal voltage(${\Delta}Vs$)를 크게 하기 위해 Folded Cascode CMOS OP amp를 이용한 Preamplifier를 설계하였으며, 기존의 Readout 칩 외부에서 인가하던 threshold voltage를 Readout 칩 내부에서 생성해 줄 수 있도록 Externally Tunable Threshold Voltage Generator 회로를 새롭게 제안하였다. 그리고, Photo Diode에서 발생하는 Dark Current Noise를 제거하기 위한 Dark Current Compensation 회로를 제안하였으며, 고속 counting이 가능하고, layout 면적이 작은 15bit LFSR(Linear Feedback Shift Resister) Counter를 설계하였다. A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed with $0.18{\mu}m$ triple-well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier which is consist of folded cascode CMOS operational amplifier has been designed to enlarge signal voltage(${\Delta}Vs$), the output voltage of preamplifier. And an externally tunable threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. In addition, A dark current compensation circuit for reducing dark current noise from photo diode is proposed and 15bit LFSR(Linear Feedback Shift Resister) Counter which is able to have high counting frequency and small layout area is designed.

UHF RFID 태그 칩용 저전력 EEPROM설계

이원재,이재형,박경환,이정환,임규호,강형근,고봉진,박무훈,하판봉,김영희,Yi, Won-Jae,Lee, Jae-Hyung,Park, Kyung-Hwan,Lee, Jung-Hwan,Lim, Gyu-Ho,Kang, Hyung-Geun,Ko, Bong-Jin,Park, Mu-Hun,Ha, Pan-Bong,Kim, Young-Hee 한국정보통신학회 2006 한국정보통신학회논문지 Vol.10 No.3

본 논문에서 는 플래쉬 셀을 사용하여 수동형 UHF RFID 태그 칩에 사용되는 저전력 1Kb 동기식 EEPROM을 설계하였다. 저전력 EEPROM을 구현하기 위한 방법으로 다음과 같은 4가지 방법을 제안하였다. 첫째, VDD(=1.5V)와 VDDP(=2.5V)의 이중 전원 공급전압 방식을 사용하였고, 둘째, 동기식 회로 설계에서 클럭(clock) 신호가 계속 클럭킹(clocking)으로 인한 스위칭 전류(switching current)가 흐르는 것을 막기 위해 CKE(Clock Enable) 신호를 사용하였다. 셋째, 읽기 사이클에서 전류 센싱(current sensing) 방식 대신 저전력 소모를 갖는 clocked inverter를 사용한 센싱 방식을 사용하였으며, 넷째, 쓰기 모드시 Voltage-up 변환기(converter) 회로를 사용하여 기준전압 발생기(Reference Voltage Generator)에는 저전압인 VDD를 사용할 수 있도록 하여 전력 소모를 줄일 수가 있었다. $0.25{\mu}m$ EEPROM 공정을 이용하여 칩을 제작하였으며, 1Kb EEPROM을 설계한 결과 읽기 모드와 쓰기 모드 시에 소모되는 전력은 각각 $4.25{\mu}W$와 $25{\mu}W$이고, 레이아웃 면적(layout area)은 $646.3\times657.68{\mu}m^2$이다. In this paper, a low-power 1Kb synchronous EEPROM is designed with flash cells for passive UHF RFID tag chips. To make a low-power EEPROM, four techniques are newly proposed. Firstly, dual power supply voltages VDD(1.5V) and VDDP(2.5V), are used. Secondly, CKE signal is used to remove switching current due to clocking of synchronous circuits. Thirdly, a low-speed but low-power sensing scheme using clocked inverters is used instead of the conventional current sensing method. Lastly, the low-voltage, VDD for the reference voltage generator is supplied by using the Voltage-up converter in write cycle. An EEPROM is fabricated with the $0.25{\mu}m$ EEPROM process. Simulation results show that power dissipations are $4.25{\mu}W$ in the read cycle and $25{\mu}W$ in the write cycle, respectively. The layout area is $646.3\times657.68{\mu}m^2$.

X-ray 이미지 센서용 싱글 픽셀 포톤 카운터 설계

김태호(Tae-Ho Kim),백승면(Seung-Myun Baek),강형근(Hyung-Geun Kang),전성채(Sung-Chae Jeon),진승오(Seung-Oh Jin),허영(Young Huh),하판봉(Pan-Bong Ha),박무훈(Mu-Hun Park),김영희(Young-Hee Kim) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11

A single pixel photon counting type image sensor which is applicable for medical diagnosis with digitally obtained image and industrial purpose has been designed using 0.18㎛ triple well CMOS process. The designed single pixel for readout chip is able to be operated by single supply voltage to simplify digital X-ray image sensor module and a preamplifier using folded cascade CMOS OP amp has been designed to enlarge signal voltage(Δ Vs), the output voltage of preamplifier. Also, a threshold voltage generator circuit which generates threshold voltage in the readout chip has been newly proposed against the conventional external threshold voltage supply. This makes proper threshold voltage supply despite of the pixel common voltage variation.

승모판증식의 색전에 (塞栓) 의한 비장경색

조남중(Nam Joong Joh),김현종(Hyun Jong Kim),강형근(Hyung Geun Kang) 대한소화기학회 1985 대한소화기학회지 Vol.17 No.2

Splenic infarction is usually caused by occlusion of splenic artery due either to emboli from valvular vegetation or from mural thromhi on the left side of the heart or to local thrombosis associated with polyarteritis nodosa, lymphoma, sickle cell anemia, etc. In recent year splenic infarction caused by complication of transcatheter embolization or intra-aortic balloon counterpulsation have been increased. Diagnosis of splenic infarction is importannt, chiefly to rule out other causes of left upper quadrant pain, such as splenic rupture, perforation of viscus or ruptured aortic aneurysm. Splenic infartion is not uncommon disease, but in our knowledge, no case was reported in our nation. Here we report a case of splenic infarction caused by emboli from mitral valve vegetation which shows typical finding of septic infarct by ultrasonography, computerized tomography, angiography and histology, with the brief review of literature.

위절제술후 이중 에너지 엑스레이 흡수계 ( Dual Energy X-ray Absorptiometry ) 를 이용한 골밀도 변화에 관한 연구

김정룡(Jung Lyong Kim),김영진(Young Jin Kim),김신곤(Shin Kon Kim),강형근(Hyung Geun Kang) 대한소화기학회 1994 대한소화기학회지 Vol.26 No.5

N/A Metabolic changes of bone have been recognized as one of postgastrectomy sequlae. Howev- er,there have until now been no reliable methods to provide an accurate assessment of bone mass status,resulting in a wide variation of the reported incidences of postoperative metabolic bone disorders.Recently an improvement in measuring bone mineral status was achieved using dual energy x ray absorptiometry(DEXA). In order to evaluate bone mineral density after various kinds of gastrectomy procedures, fourty five male patients who underwent the surgery for the stomach and colorectal cancer were studied. Group I was consisted of 13 patients who underwent total gastrectomy,groupII consisted of 16 patients with subtotal gastrectomy with gastroduodenostomy reconstruction (Billroth I), group m,of 9 patients with subtotal gastrectomy with gastrojejunostomy reco- ntruction, and control group,of 7 patients with colorectal resection. Measurement of lumbar spine bone mineral density in patients who had gastrectomy(0.84k0.14 g/cm2 in group I,0.88 +0.16 in groupII,and 0.82+0.14 in groupIII) was significantly lower than that of patients who underwent colectomy(control group 1.03k0.18 g/cm'). Serum hemoglobulin(12+1.19 gm/dl) and total calcium(4.75+0.21 mEq/L) levels in patients with gastrectomy were signifi- cantly lower than those of colectomy group(14.1 +0.85 and 4.75 +0.10, respectively). This study demonstrates that in postoperative bone mineral density and serum total calciurn level there are no differences among patients with various gastrectomy types, however, lower values than in patents with colectomy. (Korean J Gastroenterol 1994; 26: 800 805)