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강승환(Seung-Hwan Kang),류창국(Changkook Ryu),조위삼(Wisam Jo),고한서(Han Seo Ko) 대한기계학회 2013 대한기계학회 춘추학술대회 Vol.2013 No.12
In this study, a performance of steam compression of the centrifugal compressor was analysed. Initially, the performance of the impeller with the vaneless diffuser was investigated by an one-dimensional integral method and a differential method using a CFD(Computational Fluid Dynamics) analysis. The one-dimensional integral method calculated the approximate results without time consuming in comparison with the CFD method. After obtaining the whole modeling of the impeller, diffuser and volute, the CFD analysis was performed to observe the whole flow characteristics in the compressor. Air and steam were used as working fluids and compared each other to analyze the differences. Although the pressure ratios of fluids showed same tendency, the temperature ratios showed discrepancies each other.
두께 균일도 향상을 위한 LPCVD 챔버 내 웨이퍼 온도 분포 분석
강승환(Seung-Hwan Kang),김병훈(Byeong Hoon Kim),공병환(Byung Hwan Kong),이재원(Jae Won Lee),고한서(Han Seo Ko) 한국가시화정보학회 2016 한국가시화정보학회지 Vol.14 No.2
The wafer temperature and its uniformity inside the LPCVD chamber were analyzed. The temperature uniformity at the end of the wafer load depends on the heat-insulating cap. The finite difference method was used to investigate the radiation and conduction heat transfer mechanisms, and the temperature field and heat diffusion in the LPCVD chamber was visualized. It was found that the temperature uniformity of the wafers could be controlled by the size and distance of the heat-insulating cap.
강승환(Seung-Hwan Kang),이승호(Seung Ho Lee),김병훈(Byeong Hoon Kim),고한서(Han Seo Ko) 한국가시화정보학회 2015 한국가시화정보학회 학술발표대회 논문집 Vol.2015 No.12
The temperature field of the wafer batch in the furnace is analyzed. The main heat transfer mechanisms from a heater wall to wafers are radiation and conduction, and the finite difference method is used to analyze the complex heat transfer including those two mechanisms. The temperature field of the wafer batch is visualized to observe how the heat diffuses in the batch. In the condition of the constant temperature in the heater wall and cap, the heat in the wafer batch diffuses faster by conduction within the wafer than by radiation between the wafers.
강승환(Seung-Hwan Kang),정희윤(Heeyoon Chung),강영석(Young Seok Kang),전상욱(Sangook Jun),윤태호(Tae Ho Yoon) 한국유체기계학회 2020 유체기계 연구개발 발표회 논문집 Vol.2020 No.8
This study has been conducted to analyze the performance of a gas turbine engine using the open source code. The turbine nozzle vanes, which are relatively simple to analyze among the gas turbine engine components, were selected for analysis, and the analysis was carried out by OpenFOAM which is the most well-known tool as a CFD open source code. Among the solvers provided by OpenFOAM, rhoSimpleFoam and rhoPimpleFoam were used to analyze the compressible flow, and the janaf option enabled to apply the function of temperature to the thermal properties. rhoSimpleFoam was able to calculate quickly and correctly in the region below the Ma =1, but not affordable for the transonic region with shock wave, which was compensated with rhoPimpleFoam of the transonic option resulting in converged solution. The calculated results by OpenFOAM were compared to those by ANSYS CFX and showed good agreement.
웨이퍼 배치 구조를 갖는 CVD 챔버 내부의 유동 분석
강승환(Seung-Hwan Kang),이재원(Jae Won Lee),고한서(Han Seo Ko) 대한기계학회 2018 大韓機械學會論文集B Vol.42 No.1
반도체 생산 설비인 CVD 챔버 내부 웨이퍼 사이의 유동을 분석하였다. 검사체적은 튜브 안쪽 공간으로 가정하였고, 수치해석 방법을 통해 2차원 및 3차원의 내부 유동을 계산하였다. 반도체를 만드는 과정에서 웨이퍼 위에 박막의 증착률 및 균일도를 증가시키기 위해 웨이퍼 내부로의 원활한 유동이 필수적이므로, 그 방법으로 편심 웨이퍼 배치 및 기울어진 웨이퍼 배치 구조를 제안하였다. 웨이퍼 배치를 편심시켜 통로 폭의 차이를 만들거나, 웨이퍼를 기울여 웨이퍼 내부의 압력 차이를 형성시켰을 때 일정한 방향으로의 내부 유동을 발생시킬 수 있음을 밝혔다. Gas flow between wafers inside a tube of a chemical vapor deposition chamber, which is a semiconductor fabrication equipment, was analyzed. A control volume was assumed to be limited in the tube, and the two- and threedimensional internal flows were calculated numerically. To increase the deposition rate and uniformity on the wafer in the process of fabrication of the semiconductor, the active gas flow should be indispensable between the wafers; thus, it is proposed to manufacture both eccentric wafer batch and inclined wafer batch structures. This research shows that the internal gas flow was uniform and unidirectional and its velocity increased when the wafer batch was eccentric for the difference in passage width, and the wafer batch was inclined for the pressure difference within the wafer spacing.