투과전자현미경에 의한 $LaTi_{0.8}V_{0.2}O_3$ 화합물의 결정구조 분석

김좌연,윤의중,박경순,심규환,류선윤,김유혁 한국결정성장학회 1998 한국결정성장학회지 Vol.8 No.4

아크 용융을 사용하여 예비 건조된$La_2O_3,\;V_2O_3,\;TiO_2$,Ti의 혼합물로부터 제조된$LaTi_{0.8}V_{0.2}O_3$ 고용체의 결정구조를 투과전자현미경과 컴퓨터 이미지 시뮬레이션을 이용하여 연구하였다. 컴퓨터 이미지 시뮬레이션은 multislice 방법으로 여러 시편 두께와 초점 거리에서 실시하였다. $LaTi_{0.8}V_{0.2}O_3$ 의 결정구조는 Pnma 공간군을 가진 GdFeO3 형태의 사방정계$(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$로 결정되었다. $LaTi_{0.8}V_{0.2}O_3$에서 Ti와 V 원자의 규칙화에 대한 증거를 찾아 볼 수 없었다. The crystalline structure of $LaTi_{0.8}V_{0.2}O_3$ solid solutions, prepared by arc-melting palletized mixtures of predried $La_2O_3,\;V_2O_3,\;TiO_2$, and Ti, was investigated by transmission electron microscopy and computer image simulation. Computer image simulations were performed by the multislice method for a wide range of sample thickness and defocusing value. The structure of $LaTi_{0.8}V_{0.2}O_3$ was determined as a $GdFeO_3$-type orthorhombic $(a\approx5.58{\AA},\;b\approx7.89{\AA},\;and\;c\approx5.58{\AA})$ with a space group $P_{nma-}$. No evidence of ordering of Ti and V atoms in $SaTi_{0.8}V_{0.2}O_3$ was found.

MOCVD방법으로 InP 기판 위에 성장시킨 InAs 박막에서의 부정합 전위 생성 연구

김좌연,윤의중,박경순,Kim, Jwa-Yeon,Yun, Eui-Jung,Park, Kyeong-Soon 한국현미경학회 1997 Applied microscopy Vol.27 No.4

A misfit dislocation generation in InAs epilayers grown on (001) InP substrates (oriented $2^{\circ}$ off (001) toward the [110] direction) using metalorganic chemical-vapor deposition was studied. The InAs film of 17 nm thickness grown at $405^{\circ}C$ showed the three different arrays of dislocations: a straight orthogonal array to the <110> direction, an array to the >100> direction, and an array tilted by a degree of $5\sim45^{\circ}$ from the [110] direction. All of the dislocations had a/2<101> Burgers vectors inclined $45^{\circ}$ to the interface. Upon annealing at $660^{\circ}C$ the InAs films with 60, 140 and 220 nm thicknesses, most of the misfit dislocations became the Lomer type $(\sim100%)$ oriented exactly along the >110> direction. These misfit dislocation spacings were decreased with increasing the InAs thickness up to 220 nm thickness. This phenomena was interpreted by the relationship between the dislocation interaction energy among parallel misfit dislocations and the opposite remnant InAs epilayer strain energy. The distance between misfit dislocations was measured by transmission electron microscopy.

압력센서용 다이아프램 제작을 위한 TMAH의 식각특성 연구

김좌연,윤의중,이석태,이태범,이희환 호서대학교 반도체제조장비국산화연구센터 2003 학술대회 자료집 Vol.2003 No.1

본 논문에서는 MEMS 공정기술을 이용하는 압저항(piezoresistive) 압력센서용 다이아프램의 최적 구조 제작을 위한 TMAH(Tetramethyl Ammonium Hydroxide)의 식각특성을 연구하였다. KOH, EDP 등 기존의 공정 수행에 있어서 부딪치게 되는 환경적 요인을 개선하고, 생산성 향상을 위해 독성이 없고 CMOS 집적회로 공정과 호환성이 높은 TMAH를 사용하여, 식각온도와 TMAH 농도 및 식각시간에 따른 에칭률 변화를 측정하였다. 식각온도가 증가 함에 따라, 그리고 TMAH 농도가 감소함에 따라, Si 에칭률은 증가하였으나 hillock 발생률이 증가하여 식각표면의 평탄화 정도가 나빠졌다. 이러한 단점을 AP(Ammonium Persulfate)첨가제를 이용하여 해결하였다. 15wt% 농도의 TMAH 800 ml 용액을 가지고 매 10분당 같은 양의 AP를 1시간당 5g이 되도록 첨가하여, 한변의 길이가 100∼400 μm인 정사각형 모양을 가신 우수한 이방성 다이아프램을 성공적으로 제작하였다.

RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H₂/(Ar + H₂) 가스 비율에 따른 특성

김좌연,한정수,Kim, Jwa-Yeon,Han, Jung-Su 한국결정성장학회 2012 한국결정성장학회지 Vol.22 No.3

$Al_2O_3$ 2 wt%가 도핑 된 ZnO(AZO) 타겟으로RF 스퍼터링 장비를 사용하여 $H_2/(Ar+H_2)$ 가스 비율에 따른 AZO 박막을 증착 후, 이들 박막의 특성을 조사하였다. AZO 박막은 $200^{\circ}C$, $2{\times}10^{-2}$ 공정조건에서 $H_2/(Ar+H_2)$ 가스 비율을 변화시키면서 증착하였다. AZO박막증착 중 수소가스의 첨가는 박막의 특성에 영향을 미쳤다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 %일 때 비 저항(${\sim}9.21{\times}10^{-4}\;{\Omega}cm$)과 전자 이동도(${\sim}17.8\;cm^2/Vs$)는 각각 최소값과 최대값을 나타내었다. $H_2/(Ar+H_2)$ 가스 비율이 2.5 % 이상일 때는 $H_2/(Ar+H_2)$ 가스 비율이 증가할수록 비저항은 점차로 증가하였고 전자 이동도는 점차적으로 감소하였다. 전자 운반자 농도는 $H_2/(Ar+H_2)$ 가스 비율이 증가함에 따라 0 %에서 7.5 %까지 점차로 증가하였다. $H_2/(Ar+H_2)$ 가스 비율에 따라 증착된 박막의 가시광선 파장 범위에서 평균 광 투과도는 90 % 이상이었고 성장방향은 [002]이었다. The properties of Al-doped ZnO (AZO) films were investigated as a function of $H_2/(Ar+H_2)$ gas ratio using an AZO (2 wt% $Al_2O_3$) ceramic target in a radio frequency (RF) magnetron sputtering system. The deposition process was done at $200^{\circ}C$ and in $2{\times}10^{-2}$ Torr working pressure and with various ratios of $H_2/(Ar+H_2)$ gas. During the AZO film deposition process, partial $H_2$ gas affected the AZO film characteristics. The electron resistivity (${\sim}9.21{\times}10^{-4}\;{\Omega}cm$) was lowest and mobility (${\sim}17.8\;cm^2/Vs$) was highest in AZO films when the $H_2/(Ar+H_2)$ gas ratio was 2.5 %. When the $H_2/(Ar+H_2)$ gas ratio was increased above 2.5 %, the electron resistivity increased and mobility decreased with increasing $H_2/(Ar+H_2)$ gas ratio in AZO films. The carrier concentration increased with increasing $H_2/(Ar+H_2)$ gas ratio from 0 % to 7.5 %. This phenomenon was explained by reaction of hydrogen and oxygen and additional formation of oxygen vacancy. The average optical transmission in the visible light wavelength region over 90 % and an orientation of the deposition was [002] orientation for AZO films grown with all $H_2/(Ar+H_2)$ gas ratios.

상압화학기상 증착법에 의한 반도체탄소나노튜브의 성장과 $300^{\circ}C$ 대기에서의 산화열처리 효과

김좌연,Kim, Jwa-Yeon 한국결정성장학회 2005 한국결정성장학회지 Vol.15 No.2

[ $SiO_2$ ]로 산화된 웨이퍼 위에 상압화학기상증착 기술로 반도체 탄소나노튜브를 성장했으며, 이 나노튜브의 전기적 특성을 조사하였다. 전기적 특성은 반도체 탄소나노튜뷰를 $300^{\circ}C$, 대기 중에서 산화 열처리 시간을 변화시키면서 상온대기에서 측정하였다. 반도체 탄소나노튜브는 $300^{\circ}C$에서 산화 열처리 시간을 증가할수록 점차적으로 금속 탄소나노튜브로 변형되는 것을 보았다. 탄소나노튜브는 $300^{\circ}C$, 대기에서 6시간 동안 산화 열처리 후 표면의 일부가 없어지는 현상을 투과 전자현미경으로 확인하였다. Semiconductor carbon nanotube was grown on oxided silicon wafer with atmosphere pressure chemical vapor deposition (APCVD) method and investigated the electrical property after thermal oxidation at $300^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at $300^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at $300^{\circ}C$ in air. Some removed area of carbon nanotube surface was shown with transmission electron microscopy (TEM) after thermal oxidation for 6 hours at $300^{\circ}C$ in air.

H2/Ar and vacuum annealing effect of ZnO thin films deposited by RF magnetron sputtering system

김좌연,Myung-chun Kim,박경순,Jaekeun Yu 한국물리학회 2010 Current Applied Physics Vol.10 No.3

The properties of ZnO films were investigated as functions of annealing temperatures in H2/Ar and vacuum. The resistivities and mobilities of ZnO films decreased with increase of annealing temperatures in vacuum and H2/Ar ambients. However, the carrier densities of ZnO films increased with increase of annealing temperatures in vacuum and H2/Ar ambients. The resistivities of ZnO2 films annealed at 300 ℃ were ~2186 Ω cm and ~798 Ω cm in H2/Ar and vacuum ambients, respectively. The resistivities of ZnO films annealed in vacuum and H2/Ar ambients at 600 ℃ were similar with ~0.040 Ω cm and ~0.035 Ω cm, respectively. The hydrogen donor was more dominant than the oxygen vacancy or Zn interstitial donor in ZnO films annealed in ambient H2/Ar at low temperatures. The average optical transmission was >82% and an orientation of the deposition was [0 0 2] for all ZnO films annealed in vacuum and H2/Ar ambients.

플라즈마 스프레이 방법으로 코팅 된 $Al_2O_3$막의 구조적 특성

김좌연,유재근,설용태,Kim, Jwa-Yeon,Yu, Jae-Keun,Sul, Yong-Tae 한국결정성장학회 2006 韓國結晶成長學會誌 Vol.16 No.3

반도체 드라이 에처 시스템의 웨이퍼 정전기 척에 적용하기 위해 플라즈마 스프레이 방법으로 Al-60 계열 기판에 코팅한 $Al_2O_3$ 코팅 막의 특성을 조사하였다. 시편 뒷면에 냉각봉이 장착되었을 때와 없을 때, 용사거리와 분말공급량을 변형하면서 $Al_2O_3$ 막 코팅을 하여 시편을 제작 하였다. 시편 뒷면에 냉각봉이 없을 때는 크랙과 기공이 많이 발생하였다. 시편 뒷면에 냉각봉을 장착하고 분말공급량을 15g/min로 한 경우에 용사거리 60, 70, 80mm에 따른 $Al_2O_3$ 코팅에서는 크랙과 기공은 거의 찾아볼 수 없었다. 용사거리 변화에 따른 $Al_2O_3$ 막 코팅의 표면형태 변화는 없었다. 같은 공정조건에서 분말 공급량을 20g/min로 한 경우에도 크랙은 볼 수 없었으나 약간의 기공이 생겼고, 분말공급량을15g/min로 하였을 때 보다 작은 입자들이 많이 증착되었다. 시편 뒷면에 냉각봉이 없을 때가 시편 뒷면에 냉각봉이 장착된 경우에 비하여 증착 속도가 빨랐다. We have investigated plasma spray coated $Al_2O_3$ layers on Al-60 series substrates for development of wafer electrostatic chuck in semiconductor dry etching system. Samples were prepared without/with cooling bar on backside of samples, at various distances, and with different powder feed rates. There were many cracks and pores in the $Al_2O_3$ layers coated on Al-60 series substrates without cooling bar on the backside of samples. But the cracks and pores were almost disappeared in the $Al_2O_3$ layers on Al-60 series substrates coated with cooling bar on the back side of samples, 15 g/min. powder feed rate and various 60, 70, 80 mm working distances. Then the surface morphology was not changed with various working distances of 60, 70, 80 mm. When the powder feed rate was changed from 15 g/min to 20 g/min, the crack did not appear, but few pores appeared. Also the $Al_2O_3$ layer was coated with many small splats compared with $Al_2O_3$ layer coated with 15 g/min powder feed rate. The deposited rate of $Al_2O_3$ layer was higher when the process was done without cooling bar on the back side of sample than that with cooling bar on the back side of sample.

The Physical Properties of AZO Films Deposited by RF Magnetron Sputtering in Hydrogen-diluted Argon

김좌연,한정수,진현준,김유혁,박경순 한국물리학회 2014 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.65 No.3

The properties of AZO (98-wt% ZnO, 2-wt% Al2O3) films produced in pure Ar and Ar (98%)+ H2 (2%) (H2-diluted Ar) by radio-frequency (RF) magnetron sputtering were investigated asfunctions of the substrate temperatures. H2-diluted Ar improved the electrical properties of theAZO films fabricated at low substrate temperatures, but this benefit gradually diminished withincreasing substrate temperature. This phenomenon was explained by O-H stretching in the Zn-Obond at low temperatures and by the formation of oxygen vacancies at high temperatures. Theaverage optical transmission was over 85%, and the orientation of the AZO films deposited bothin pure Ar and in H2-diluted Ar was in the [002] direction.

플라즈마 처리에 의한 마스크 특성 변화

김좌연,최상수,강병선,민동수,안영진,Kim, Jwa-Yeon,Choi, Sang-Su,Kang, Byung-Sun,Min, Dong-Soo,An, Young-Jin 한국전기전자재료학회 2008 전기전자재료학회논문지 Vol.21 No.2

We have studied surface roughness, contamination of impurity, bonding with some gas element, reflectance and zeta potential on masks to be generated or changed during photolithography/dry or wet etching process. Mask surface roughness was not changed after photolithography/dry etching process. But surface roughness was changed on some area under MoSi film of Cr/MoSi/Qz. There was not detected any impurity on mask surface after plasma dry etching process. Reflectance of mask was increased after variable plasma etching treatment, especially when mask was treated with plasma including $O_2$ gas. Blank mask was positively charged when the mask was treated with Cr plasma etching gas($Cl_2:250$ sccm/He:20 $sccm/O_2:29$ seem, source power:100 W/bias power:20 W, 300 sec). But this positive charge was changed to negative charge when the mask was treated with $CF_4$ gas for MoSi plasma etching, resulting better wet cleaning. There was appeared with negative charge on MoSi/Qz mask treated with Cr plasma etching process condition, and this mask was measured with more negative after SC-1 wet cleaning process, resulting better wet cleaning. This mask was charged with positive after treatment with $O_2$ plasma again, resulting bad wet cleaning condition.

Cu 금속과 Si 기판 사이에서 확산방지막으로 사용하기 위한 Zr(Si)N 박막의 특성

김좌연,조병철,채상훈,김헌창,박경순 한국결정성장학회 2002 韓國結晶成長學會誌 Vol.12 No.6

초고집적 반도체 회로에서 Cu를 배선으로 쓰이기 위한 Cu 금속과 Si 기판사이의 확산방지막으로써 Zr(Si)N 박막을 연구하였다. Zr(Si)N 박막증착은 DC magnetron sputter으로 $Ar/N_2$의 혼합 gas를 사용한 reactive sputtering 방법을 이용하였다. 상온에서 ZrN 박막 증착시 Ar gas와 NE gas 비율이 48 : 2일 때 가장 낮은 비저항값을 가졌으며, 증착시 기판의 온도의 증가에 따라서 비저항값이 낮아졌다. 비저항값이 감소된 ZrN 박막일수록 (002)면의 방향성을 갖는 결정이 성장되었다. ZrN 박막의 Cu 확산방지 특성은 ZrN 박막에 Si을 첨가함으로써 개선될 수 있으며 지나치게 첨가될 경우에는 오히려 확산방지 특성이 감소되었다. 접착력 특성에서는 ZrN에 Si의 함유량이 증가함에 파라 개선되었다. 증착막의 특성은 XRD, 광학 현미경, scretch tester 그리고 $\alpha$-step 등을 사용하여 분석하였다. We have studied Zr(Si)N film as a diffusion barrier between Cu metal and Si substrate for application of interconnection metal in ULSI circuits. Zr(Si)N film was deposited with reactive DC magnetron sputtering system using $Ar/N_2$mixed gas. The value of the resistivity was the lowest for the ZrN film using 29 : 1 of Ar : $N_2$reactant gas ratio at room temperature and decreased with increasing of Si substrate temperature. As the value of ZrN film resistivity was decreased, the direction of crystal growth was toward to (002) plane. The barrier property of ZrN film added with Si was improved. But Si was added too much in ZrN film, the barrier property was degraded. The adhesive property was improved with increasing of Si in ZrN. For the analysis of the film, XRD, Optical microscopy, Scretch tester, so on were used.