http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
Fabrication and structural, electrical characterization of i-ZnO/n-ZnO nanorod homojunctions
S. Yılmaz,E. Bacaksız,İ. Polat,Y. Atasoy 한국물리학회 2012 Current Applied Physics Vol.12 No.5
Well-aligned ZnO nanorods were synthesized by a vapor phase transport method on ZnO buffer layer coated n-Si substrates. X-ray diffraction and scanning electron microscopy results showed that the deposited ZnO nanorods crystallize in the wurtzite structure and are highly textured with their c-axes normal to the substrate and show a clearly hexagonal morphology. A heavily compensated and intrinsic ZnO layer (i-ZnO) doped with both Mg and Na was deposited on the nominally undoped ZnO nanorods (which show a natural n-type behavior) to produce an i-ZnO/n-ZnO homojunction. The i-ZnO layer consisted of the grainy shape nano-crystallites with the wavy surface morphology. The currentevoltage (I-V) characteristics of these structures in the temperature range of 150e300 K have been analyzed in the framework of standard thermionic emission (TE) theory with the assumption of a Gaussian distribution of the barrier heights. The values of zero bias barrier height (Φb0) and ideality factor (n) were found to be strongly temperature dependent whereby n decreases while Φb0 increases with increasing temperature. The ln(I0/T2) vs q/kT plot shows a straight line behavior and the values of activation energy (Ea = Φb0) and the Richardson constant (A*) determined from the intercept and slope of the plot were 0.926 eV and 2.61 × 10-8 A cm-2 K-2, respectively. This value of A* is much lower than the known value of 32 A cm-2 K-2 for ZnO. Thus, a modified ln(0=T2)-(σ20q2=2k2T2)vs. q/kT plot based on a Gaussian distribution of barrier heights was used which yields a mean barrier height (Φb)and modified effective Richardson (A**) of 1.032 eV and 34.85 A cm- K-, respectively. This value of A** is much closer to the theoretical value of 32 A cm-2K-2 for ZnO.
Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se₂ 박막태양전지의 특성 연구
조보환(Bo Hwan Cho),김선철(Seon Cheol Kim),문선홍(Sun Hong Mun),김승태(Seung Tae Kim),안병태(Byung Tae Ahn) 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
CIGS solar cell consisted of various films. In this research, we investigated electrode materials in Cu(In,Ga)Se₂ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was 5.2x10<SUP>-4</SUP>Ω?cm by the rapid thermal annealing at 200°C for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with O₂/(Ar+O₂) ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.
Al 그리드와 ZnO 투명전도막 의 공정변화에 따른 Cu(In,Ga)Se<sub>2</sub> 박막태양전지의 특성 연구
조보환,김선철,문선홍,김승태,안병태,Cho, Bo Hwan,Kim, Seon Cheol,Mun, Sun Hong,Kim, Seung Tae,Ahn, Byung Tae 한국태양광발전학회 2015 Current Photovoltaic Research Vol.3 No.1
CIGS solar cell consisted of various films. In this research, we investigated electrode materials in $Cu(In,Ga)Se_2$ (CIGS) cells, including Al-doped ZnO (ZnO:Al), intrinsic ZnO (i-ZnO), and Al films. The sputtered ZnO:Al film with a sputtering power at 200W showed the lowest series resistance and highest cell efficiency. The electrical resistivity of the 200-W sputtered ZnO:Al film was $5.2{\times}10^{-4}{\Omega}{\cdot}cm$ by the rapid thermal annealing at $200^{\circ}C$ for 1 min. The electrical resistivity of i-ZnO was not measurable due to its high resistance. But the optical transmittance was highest with less oxygen supply and high efficiency cell was achieved with $O_2/(Ar+O_2)$ ratio was 1% due to the increase of short-circuit current. No significant change in the cell performance by inserting a Ni layer between Al and ZnO:Al films was observed.
Mg<sub>0.1</sub>Zn<sub>0.9</sub>O/ZnO 활성층 구조의 박막트랜지스터 연구
이종훈,김홍승,장낙원,윤영,Lee, Jong Hoon,Kim, Hong Seung,Jang, Nak Won,Yun, Young 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.7
We report the characteristics of thin-film transistor (TFT) to make the bi-channel structure with stacked $Mg_{0.1}Zn_{0.9}O$ (Mg= 10 at.%) and ZnO. The ZnO and $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited by radio frequency (RF) co-sputter system onto the thermally oxidized silicon substrate. A total thickness of active layer was 50 nm. Firstly, the ZnO thin films were deposited to control the thickness from 5 nm to 30 nm. Sequentially, the $Mg_{0.1}ZnO_{0.9}O$ thin films were deposited to change from 45 nm to 20 nm. The bi-layer TFT shows more improved properties than the single layer TFT. The field effect mobility and subthreshold slope for $Mg_{0.1}ZnO_{0.9}O$/ZnO-TFT are $7.40cm^2V^{-1}s^{-1}$ and 0.24 V/decade at the ZnO thickness of 10 nm, respectively.
Electrical Behaviors of ZnO Elements under Combined Direct and Alternating Voltages
Yang, Soon-Man,Lee, Bok-Hee,Paek, Seung-Kwon The Korean Institute of Electrical Engineers 2009 Journal of Electrical Engineering & Technology Vol.4 No.1
This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio a. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio $\alpha$ increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.
Electrical Behaviors of ZnO Elements under Combined Direct and Alternating Voltages
Soon-Man Yang,Bok-Hee Lee,Seung-Kwon Paek 대한전기학회 2009 Journal of Electrical Engineering & Technology Vol.4 No.1
This paper presents the characteristics of leakage currents flowing through zinc oxide (ZnO) surge arrester elements under the combined direct-current (DC) and 60 Hz alternating-current (AC) voltages. The current-voltage characteristic curves (I-V curves) of the commercial ZnO surge arrester elements were obtained as a function of the voltage ratio α. At constant peak value of the combined DC and AC voltage, the resistive leakage current of the ZnO blocks was significantly increased as the voltage ratio α increased. The I-V curves under the combined DC and AC voltages were placed between the pure DC and AC characteristics, and the cross-over phenomenon in both the I-V curves and R-V curves was observed at the low current region. The ZnO power dissipation for DC voltages was less than that for AC voltage in the pre-breakdown region and reversed at higher voltages.
Influence of MnO Clusters on Resistance Switching Behaviors in ZnO/n-Si Structures
얄리셰프,김연수,박배호,율다세프 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
Polycrystalline ZnO and ZnO:Mn (5%) films deposited on n-type Si substrates were investigated. The bias polarity dependence of the resistance change and its long retention in Mn-doped ZnO films was observed. The resistance switching could be explained by the trapping/extracting of charge carriers in the ZnO:Mn/n-Si interlayer containing MnO clusters. Under illumination, the ZnO:Mn/n-Si structure exhibited a decreased threshold voltage for switching from a high-resistance state to a low- resistance state.
ZnO-Zn<sub>2</sub>BiVO<sub>6</sub>-Co<sub>3</sub>O<sub>4</sub> 바리스터의 전류-전압 및 임피던스의 온도 특성
홍연우 ( Youn Woo Hong ),김유비 ( You Bi Kim ),백종후 ( Jong Hoo Paik ),조정호 ( Jeong Ho Cho ),정영훈 ( Young Hun Jeong ),윤지선 ( Ji Sun Yun ),박운익 ( Woon Ik Park ) 한국센서학회 2016 센서학회지 Vol.25 No.6
This study introduces the characteristics of current-voltage (I-V) and impedance variance for ZnO-Zn<sub>2</sub>BiVO<sub>6</sub>-Co<sub>3</sub>O<sub>4</sub> (ZZCo), which is sintered at 900℃, according to temperature changes. ZZCo varistor demonstrates dramatic improvement of non-linear coefficient, α = 66, with lower leakage current and higher insulating resistivity than those of ZZ (ZnO-Zn<sub>2</sub>BiVO<sub>6</sub>) from the aspect of I-V curves. While both systems are thermally stable up to 125℃, ZZCo represents a higher grain boundary activation energy with 1.05 eV and 0.94 eV of J-E-T and from IS & MS, respectively, than that of ZZ with 0.73 eV and 0.82 eV of J-E-T and from IS & MS, respectively, in the region above 180℃. It could be attributed to the formation of V<sub>O</sub> (0.41~0.47 eV) as dominant defect in two systems, as well as the defect-induced capacitance increase from 781 pF to 1 nF in accordance with increasing temperature. On the other hand, both the grain boundary capacitances of ZZ and ZZCo are shown to decrease to 357 pF and 349 pF, respectively, while the resistances systems decreased exponentially, in accordance with increasing temperature. So, this paper suggests that the application of newly formed liquid phases as sintering additives in both Zn<sub>2</sub>BiVO<sub>6</sub> and the ZZCo-based varistors would be helpful in developing commercialized devices such as chips, disk-type ZnO varistors in the future.
Hujie Jin,Bing Xu,박춘배 한국전기전자재료학회 2011 Transactions on Electrical and Electronic Material Vol.12 No.4
In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of N_2 and O_2 gas with ceramic ZnO:(2 wt% Al_2O_3) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the N2 fraction in the mixed N_2 and O_2 gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of 1.5 × 10^(15)-2.93 × 10^(17) cm^(-3), resistivity in the range of 131.2-2.864Ωcm, and mobility in the range of 3.99-31.6 cm^2V^(-1)s^(-1) respectively.
Jin, Hujie,Xu, Bing,Park, Choon-Bae The Korean Institute of Electrical and Electronic 2011 Transactions on Electrical and Electronic Material Vol.12 No.4
In this study, Al-N codoped p-type zinc oxide (ZnO) thin films were deposited on Si and homo-buffer layer templates in a mixture of $N_2$ and $O_2$ gas with ceramic ZnO:(2 wt% $Al_2O_3$) as a sputtering target using DC- magnetron sputtering. X-ray diffraction spectra of two-theta diffraction showed that all films have a predominant (002) peak of ZnO Wurtzite structure. As the $N_2$ fraction in the mixed $N_2$ and $O_2$ gases increased, field emission secondary electron microscopy revealed that the surface appearance of codoped films on Si varied from smooth to textured structure. The p-type ZnO thin films showed carrier concentration in the range of $1.5{\times}10^{15}-2.93{\times}10^{17}\;cm^{-3}$, resistivity in the range of 131.2-2.864 ${\Omega}cm$, and mobility in the range of $3.99-31.6\;cm^2V^{-1}s^{-1}$ respectively.