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얄리셰프,율다세프,Ziyodbek A. Yunusov,강태원 한국물리학회 2016 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.68 No.3
The response of the near-band-edge photoluminescence (PL) emission of ZnO thin films to annealing and the electric field’s action was investigated. These processes separately caused similar changes in the PL spectrum. The donor bound exciton emission at 3.36 eV, which is attributed to bulk defects, demonstrated invariance to any exposure, while the intensity of the 3.33-eV emission line decreased after annealing in nitrogen gas and was restored after annealing in an oxygen atmosphere. On the other hand, application of an electrical field during laser illumination resulted in the same change in the PL spectrum. The transition of defects related to the 3.33-eV emission from a radiative to a non-radiative state (and inversely) through the capture (release) of electrons was proposed as the mechanism responsible for the observed changes in the optical properties. The desorption of oxygen from the surface of the ZnO film during annealing in N2 or the motion of photogenerated electrons toward the surface during laser illumination were suggested to be the cause of this capture process.
Influence of MnO Clusters on Resistance Switching Behaviors in ZnO/n-Si Structures
얄리셰프,김연수,박배호,율다세프 한국물리학회 2012 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.60 No.10
Polycrystalline ZnO and ZnO:Mn (5%) films deposited on n-type Si substrates were investigated. The bias polarity dependence of the resistance change and its long retention in Mn-doped ZnO films was observed. The resistance switching could be explained by the trapping/extracting of charge carriers in the ZnO:Mn/n-Si interlayer containing MnO clusters. Under illumination, the ZnO:Mn/n-Si structure exhibited a decreased threshold voltage for switching from a high-resistance state to a low- resistance state.