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Han, Hoon Hee,Lim, Donghwan,Sergeevich, Andrey Sokolov,Jeon, Yu-Rim,Lee, Jae Ho,Son, Seok Ki,Choi, Changhwan ELSEVIER 2017 MICROELECTRONIC ENGINEERING Vol.178 No.-
<P><B>Abstract</B></P> <P>The charge trapping behaviors of ammonium poly-sulfide, (NH<SUB>4</SUB>)<SUB>2</SUB>S<SUB>x</SUB>, passivated GaN MOS device with atomic layer deposited HfAlO<SUB>x</SUB> gate dielectric and DC-sputtered TiN gate electrode are investigated and compared with those of GaN MOS device with hydrochloric acid, HCl, passivation. Compared to non-S passivated device, higher peak capacitance (>20% @1MHz), reduced frequency dispersion (~30% ↓), lower hysteresis (~34% ↓), higher breakdown (1.3×), lower stress induced flat-band voltage (V<SUB>FB</SUB>) shift (~30% ↓), and lower interface state density (D<SUB>it</SUB>), stronger immunity D<SUB>it</SUB> generation (ΔD<SUB>it</SUB>) against gate bias voltage are attained with S-passivated device. Further improved characteristics are observed with post deposition annealing at 400°C for 10min. These behaviors are mainly attributed to higher bond strength energy of SO and SN than those of ClO and ClN bonds.</P> <P><B>Highlights</B></P> <P> <UL> <LI> Sulfur passivation induces higher C<SUB>ox</SUB>, reduced frequency dispersion, lower hysteresis, higher V<SUB>BD</SUB>, and lower D<SUB>it</SUB>. </LI> <LI> Stress induced ΔV<SUB>FB</SUB> and ΔD<SUB>it</SUB> are significantly suppressed with sulfur-passivation. </LI> <LI> Further improvement is still observed after post annealing at 400 <SUP>o</SUP>C. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>[DISPLAY OMISSION]</P>
Electrical Properties of Surface-Passivated GaAs Nanowires
신재철,Rochelle S. Lee,김태겸,이상원,조규연,최종현,김미영 한국진공학회 2018 Applied Science and Convergence Technology Vol.27 No.6
The electrical properties of surface-passivated GaAs nanowires (NWs) were investigated and compared with those of unpassivated NWs. Surface passivation was carried out by chemically etching the native oxide of the GaAs NWs with ammonium polysulfide, (NH4)2Sx, while the native oxide of the unpassivated NWs was etched in hydrochloric acid solution. The GaAs NWs were grown by metal-organic chemical vapor deposition via a Au-catalyzed vapor-liquidsolid growth method. Sulfur-passivated single-GaAs NWs showed 3-fold increase in mobility, indicating that sulfur passivation reduces the presence of surface states, contact resistance, and the Schottky barrier at NW-metal contacts.
( Ki Tae Kim ),( Young Sik Kim ) 한국부식방식학회(구 한국부식학회) 2018 Corrosion Science and Technology Vol.17 No.4
During the process of sulfur dioxide removal, flue gas desulfurization equipment provides a serious internal corrosion environment in creating sulfuric acid dew point corrosion. Therefore, the utilities must use the excellent corrosion resistance of steel desulfurization facilities in the atmosphere. Until now, the trend in developing anti-sulfuric acid steels was essentially the addition of Cu, in order to improve the corrosion resistance. The experimental alloy used in this study is Fe-0.03C-1.0Mn-0.3Si-0.15Ni-0.31Cu alloys to which Ru, Zn and Ta were added. In order to investigate the effect of H<sub>2</sub>SO<sub>4</sub> concentration and the alloying elements, chemical and electrochemical corrosion tests were performed. In a low concentration of H<sub>2</sub>SO<sub>4</sub> solution, the major factor affecting the corrosion rate of low alloy steels was the exchange current density for H+/H<sub>2</sub> reaction, while in a high concentration of H<sub>2</sub>SO<sub>4</sub> solution, the major factors were the thin and dense passive film and resulting passivation behavior. The alloying elements reducing the exchange current density in low concentration of H<sub>2</sub>SO<sub>4</sub>, and the alloying elements decreasing the passive current density in high concentration of H<sub>2</sub>SO<sub>4</sub>, together play an important role in determining the corrosion rate of Cu-bearing low alloy steels in a wide range of H<sub>2</sub>SO<sub>4</sub> solution.
Agrawal Khushabu,Patil Vilas,Ali Fida,Rabelo Matheus,우원종,조은철,Yi Junsin 한국물리학회 2021 Current Applied Physics Vol.26 No.-
The HF treatment removes the native oxide and lays behind the dangling bonds over the Si surface which causes the increment in density of interface traps (Dit) through the direct deposition of high-k dielectric on Si. Here, we propose the facile method for reduction of interface traps and improvement in barrier height with the (NH4)2S treatment on Al2O3/Si interfaces, which can be used as the base for the non-volatile memory device. The AFM was used to optimize the treatment time and surface properties, while XPS measurements were carried out to study the interface and extract the barrier height (ΦB). The short period of 20 s treatment shows the improvement in the barrier height (1.02 eV), while the one order reduction in the Dit (0.84 × 1012 cm2/eV) of sulfur passivated Al/Al2O3/Si MOS device. The results indicate the favorable passivation of the dangling bonds over the Si surfaces covered by sulfur atoms.
Jin, H.S.,Cho, Y.J.,Lee, S.M.,Kim, D.H.,Kim, D.W.,Lee, D.,Park, J.B.,Won, J.Y.,Lee, M.J.,Cho, S.H.,Hwang, C.S.,Park, T.J. New York] ; North-Holland 2014 APPLIED SURFACE SCIENCE - Vol.315 No.-
Atomic-layer-deposited Al<SUB>2</SUB>O<SUB>3</SUB> films were grown on ultrathin-body In<SUB>0.53</SUB>Ga<SUB>0.47</SUB>As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH<SUB>4</SUB>)<SUB>2</SUB>S) solution, and dry processing using post-deposition annealing (PDA) under a H<SUB>2</SUB>S atmosphere. The PDA under the H<SUB>2</SUB>S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment than the PDA under a H<SUB>2</SUB>S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H<SUB>2</SUB>S atmosphere following (NH<SUB>4</SUB>)<SUB>2</SUB>S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.
( Heon Young Ha ),( Tae Ho Lee ) 한국부식방식학회(구 한국부식학회) 2013 Corrosion Science and Technology Vol.12 No.4
In NaCl solutions acidified with H2SO4, Fe20Cr1.1N alloy showed enhanced pitting corrosion resistance than Fe20Cr alloy. An XPS analysis revealed that the passive film of Fe20Cr1.1N alloy contained higher cationfraction of Cr than that of Fe20Cr alloy, and nitrogen was incorporated into the film. In addition, it was found that the passive film of Fe20Cr1.1N alloy was thinner and had higher oxygen vacancy density than that of Fe20Cr alloy. Based on these observations, it was concluded that the chemical composition was the determining factor for the protectiveness of the passive film of Fe20Cr based alloy in dilute H2SO4 solution.
Hwang, Jin-Ha Materials Research Society of Korea 2003 한국재료학회지 Vol.13 No.2
The interface between low carbon steel and blended cement pastes containing slag was investigated using impedance spectroscopy. In addition, the pastes were characterized by several analytical methods (XRD, EDX, electrode potential, pH and ICP). The electrical behavior of the interface in the blended slag systems is correlated to its corresponding pore solution chemistry and the products present in the interface. Passivation occurred at the paste/steel interfaces, in cement pastes up to containing from 0 to 75% slag content. 100% slag paste induced corrosion of the low carbon steel, which could be explained by the influence of sulfur on the system.
수동형 FTIR 원격화학 탐지기를 이용한 SF6 오염운의 실시간 탐지
정유진,박병황,김주현 한국군사과학기술학회 2014 한국군사과학기술학회지 Vol.17 No.1
Brightness temperature spectra acquired from FTIR(Fourier Transform Infrared)-SCADS (Standoff Chemical AgentDetection System) could be available for detection and identification of the chemical agents and pollutants fromdifferent background. IR spectrum range of 770 to 1350 cm-1 is corresponding to “atmospheric window”. A2-dimensional(2D) brightness temperature spectrum was drawn from combining each data point through automaticcontinuous scanning of FTIR along with altitude and azimuth. At higher altitude, temperature of background wasdecreased but scattering effect of atmospheric gases was increased. Increase in temperature difference betweenbackground and blackbody in SCADS at higher temperature causes to increases in peak intensity of SF6. Thisapproach shows us a possibility that 2D visual information is acquired from scanning data with a single FTIRSCADS.