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RISS 인기검색어
- 검색키워드
- 저자 : Patil Vilas (검색결과 4 건)
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Komal N. Patil,Divya Prasad,Vilas K. Manoorkar,Jayesh T. Bhanushali,Arvind H. Jadhav,Bhari Mallanna Nagaraja 한국공업화학회 2022 Journal of Industrial and Engineering Chemistry Vol.106 No.-
Production of c-butyrolactone (GBL) from vapour-phase dehydrocyclization of biomass derived 1,4-butanediol is considered as more sustainable and significantly commercial industrial process. In thisregards, Cu-based catalyst was designed with ZnAl2O4 spinel support and CeO2 as a promoter to obtainCu/ZnAl2O4-CeO2 catalyst with different Cu:Ce mass ratio. The catalysts were characterized by XRD,H2-TPR, FT-IR, CO2-TPD, FE-SEM and BET analysis and then tested for the production of cbutyrolactone(GBL) by dehydrocyclization of 1,4-butanediol (BDO). Further, various reaction parameterswere optimized and their effects on the catalytic activity were studied to obtain maximum yield towardsdesired product at ambient reaction conditions. The results revealed that metallic Cu species and CeO2 asa promoter were highly dispersed on ZnAl2O4 support with appreciable surface area. Additionally, CeO2as a promoter prevented agglomeration, increased the basic character of catalyst to selectively obtain GBLas a major product. 10 wt% Cu/ZnAl2O4-10 wt% CeO2 catalyst exhibited excellent yield (94%) towards GBLproduct with tetrahydrofuran (THF) as the only by-product and demonstrated consistent activity andselectivity during 26 h time on stream. Further, the optimized catalyst displayed appreciable recyclabilityperformance up to seven recycles without much loss in its catalytic performance making the catalyst feasibleat industrial scale.
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Agrawal Khushabu,Patil Vilas,Ali Fida,Rabelo Matheus,우원종,조은철,Yi Junsin 한국물리학회 2021 Current Applied Physics Vol.26 No.-
The HF treatment removes the native oxide and lays behind the dangling bonds over the Si surface which causes the increment in density of interface traps (Dit) through the direct deposition of high-k dielectric on Si. Here, we propose the facile method for reduction of interface traps and improvement in barrier height with the (NH4)2S treatment on Al2O3/Si interfaces, which can be used as the base for the non-volatile memory device. The AFM was used to optimize the treatment time and surface properties, while XPS measurements were carried out to study the interface and extract the barrier height (ΦB). The short period of 20 s treatment shows the improvement in the barrier height (1.02 eV), while the one order reduction in the Dit (0.84 × 1012 cm2/eV) of sulfur passivated Al/Al2O3/Si MOS device. The results indicate the favorable passivation of the dangling bonds over the Si surfaces covered by sulfur atoms.
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Self Heating Effects in Sub-nm Scale FinFETs
Agrawal, Khushabu,Patil, Vilas,Yoon, Geonju,Park, Jinsu,Kim, Jaemin,Pae, Sangwoo,Kim, Jinseok,Cho, Eun-Chel,Junsin, Yi The Korean Institute of Electrical and Electronic 2020 전기전자재료학회논문지 Vol.33 No.2
Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO<sub>2</sub> and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of their lower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.
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Self Heating Effects in Sub-nm Scale FinFETs
Khushabu Agrawal,Vilas Patil,윤건주,박지수,김재민,배상우,김진석,조은철,이준신 한국전기전자재료학회 2020 전기전자재료학회논문지 Vol.33 No.2
Thermal effects in bulk and SOI FinFETs are briefly reviewed herein. Different techniques to measure these thermal effects are studied in detail. Self-heating effects show a strong dependency on geometrical parameters of the device, thereby affecting the reliability and performance of FinFETs. Mobility degradation leads to 7% higher current in bulk FinFETs than in SOI FinFETs. The lower thermal conductivity of SiO2 and higher current densities due to a reduction in device dimensions are the potential reasons behind this degradation. A comparison of both bulk and SOI FinFETs shows that the thermal effects are more dominant in bulk FinFETs as they dissipate more heat because of theirlower lattice temperature. However, these thermal effects can be minimized by integrating 2D materials along with high thermal conductive dielectrics into the FinFET device structure.
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