InGaP/GaAs Heterojunction Bipolar Transistor의 Thermal Resistance 측정

문태정,황성범 慶南專門大學 1999 論文集 Vol.27 No.1

A differential HBT power cell and its model

Lee, Dong Ho,Chen, Yue,Lee, Kyung-Ai,Hong, Songcheol Wiley Subscription Services, Inc., A Wiley Company 2008 MICROWAVE AND OPTICAL TECHNOLOGY LETTERS - Vol.50 No.9

<P>A differential heterojunction bipolar transistor (HBT) power cell has been designed and modeled with additional model extraction patterns. The differential power cell, which is composed of a unit differential amplifier with a common emitter ballast resistor, has no gain degradation by the ballast resistors and has been implemented in InGaP/GaAs HBT technology. DC and AC characteristics are extracted from a half circuit of the differential power cell and thermal characteristics are extracted from a common-mode circuit of that. Using the extracted model, a 5-GHz differential power amplifier has been designed and fabricated with on-chip output networks. The 5-GHz differential power amplifier delivers 26 dBm of P<SUB>1dB</SUB> with 30% collector efficiency. © 2008 Wiley Periodicals, Inc. Microwave Opt Technol Lett 50: 2262–2268, 2008; Published online in Wiley InterScience (www.interscience.wiley.com).DOI 10.1002/mop.23684</P>

Systematic and Rigorous Extraction Procedure for InP HBT π-type Small-signal Model Parameters

Jincan Zhang,Leiming Zhang,Min Liu,Liwen Zhang 대한전자공학회 2020 Journal of semiconductor technology and science Vol.20 No.4

In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-signal model of InP HBTs. All of the elements parameters are acquired by means of a systematic and rigorous extraction method based on peeling algorithm, and there is no any simplified approximation. The extraction equations are derived from S-parameters by peeling peripheral elements from small-signal models to get reduced ones, so the extraction technique is more easily understood and clearer. The complete π-type model for an emitter-up InP HBT with 1×15 µm2 emitter area is established and validated, which shows that the small-signal equivalent circuit and elements values extraction method have very high accuracy.

A Compact Macromodeling Method for Characterizing Large-signal DC and AC Performance of InP and GaAs HBTs

Lin Cheng,Hongliang Lu,Yuming Zhang,Yimen Zhang 대한전자공학회 2022 Journal of semiconductor technology and science Vol.22 No.2

In this paper, a compact macromodeling method for characterizing the large-signal characteristics of heterojunction bipolar transistors (HBTs) is proposed and successfully applied to describe the DC and AC performance of InP and GaAs HBT devices. Using the Symbolically-defined Device (SDD) technology, an empirical macro circuit preserving the Spice Gummel-Poon (SGP) intrinsic network and a simplified thermal network is established. The empirical current and charge functions are embedded in the SDD macro circuit network module. Compared with other large-signal models, the proposed model description and the relevant parameter extraction are relatively simpler, and at the same time, this method can maintain high fitting accuracy. To assess the validity and the accuracy of the proposed model, the compact large-signal model is constructed for 1 µm InP HBT and 1 µm GaAs HBT. Based on the complete extraction of the model parameters, excellent consistency is obtained between the measured and modeled results.

High-Isolation SPDT RF Switch Using Inductive Switching and Leakage Signal Cancellation

Choon Sik Cho,Byeong Wan Ha 한국전자파학회JEES 2014 Journal of Electromagnetic Engineering and Science Vol.14 No.4

A switch is one of the most useful circuits for controlling the path of signal transmission. It can be added to digital circuits to create a kind of gate-level device and it can also save information into memory. In RF subsystems, a switch is used in a different way than its general role in digital circuits. The most important characteristic to consider when designing an RF switch is keeping the isolation as high as possible while also keeping insertion loss as low as possible. For high isolation, we propose leakage signal cancellation and inductive switching for designing a singlepole double-throw (SPDT) RF switch. By using the proposed method, an isolation level of more than 23 dB can be achieved. Furthermore, the heterojunction bipolar transistor (HBT) process is used in the RF switch design to keep the insertion loss low. It is demonstrated that the proposed RF switch has an insertion loss of less than 2 dB. The RF switch operates from 1 to 8 GHz based on the 0.18-㎛ SiGe HBT process, taking up an area of 0.3 mm².

A novel radiation-dependence model of InP HBTs including gamma radiation effects

Zhang Jincan,Cai Haiyi,Li Na,Zhang Liwen,Liu Min,Yang Shi 한국원자력학회 2023 Nuclear Engineering and Technology Vol.55 No.11

In order to predict the lifetime of InP Heterojunction Bipolar Transistor (HBT) devices and related circuits in the space radiation environment, a novel model including gamma radiation effects is proposed in this paper. Based on the analysis of radiation-induced device degradation effects including both DC and AC characteristics, a set of empirical expressions describing the device degradation trend are presented and incorporated into the Keysight model. To validate the effective of the proposed model, a series of radiation experiments are performed. The correctness of the novel model is validated by comparing experimental and simulated results before and after radiation.

Stack-Shared Layer Structure for Monolithic Integration of InP-Based HBTs and Photodiodes

김문정 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.54 No.4

A stack-shared layer structure has been developed to fabricate monolithical InP/InGaAs heterojunction bipolar transistors (HBTs) and InGaAs/InP p-i-n photodiodes (PDs). In the new layer structure, a portion of the layers for the photodiode are stacked on those of the HBT structure. However, the N-type contact layer for the photodiode is shared concurrently as an n+-InP emitter layer, which is used as an emitter contact layer for an HBT. This stack-shared layer structure permits both devices to provide independent optimization of the device performance. The fabricated HBT employing this layer structure exhibits good high-speed characteristics of fT = 105 GHz and fmax = 300 GHz. Also, the photodiodes with the new layer structure are compared with those of the conventional stacked layer structure from a device optimization point of view by using a figure of merit, such as the dark current and the 3-dB electrical bandwidth. A stack-shared layer structure has been developed to fabricate monolithical InP/InGaAs heterojunction bipolar transistors (HBTs) and InGaAs/InP p-i-n photodiodes (PDs). In the new layer structure, a portion of the layers for the photodiode are stacked on those of the HBT structure. However, the N-type contact layer for the photodiode is shared concurrently as an n+-InP emitter layer, which is used as an emitter contact layer for an HBT. This stack-shared layer structure permits both devices to provide independent optimization of the device performance. The fabricated HBT employing this layer structure exhibits good high-speed characteristics of fT = 105 GHz and fmax = 300 GHz. Also, the photodiodes with the new layer structure are compared with those of the conventional stacked layer structure from a device optimization point of view by using a figure of merit, such as the dark current and the 3-dB electrical bandwidth.

A 60-㏈ Image Rejection Single-Side Band Transmitter in InGaP/GaAs HBT Technology

Piljae Park,Hyunkyu Yu,Nak-Woong Eum 대한전자공학회 2009 ITC-CSCC :International Technical Conference on Ci Vol.2009 No.7

A single-side band (SSB) transmitter with 60-㏈ image rejection ratio (IRR) is presented in InGaP/GaAs heterojunction bipolar transistor (HBT) technology. To achieve a high image rejection, not only matches between in (I) and quadrature (Q) blocks but also optimal mixer driving is considered. Poly phase filter (PPF) design and its operation for better IRR are shown. To get well matched I/Q signals, Gilbert-cell mixers in the up-converter are operated as a linear multiplier by selecting a proper local oscillator (LO) power. The designed SSB transmitter exploits Hartley topology and it consists of active baluns, two stage PPFs at intermediate frequency (IF) and LO frequency, double balanced I/Q mixers and current mode logic type summer. With 140-㎒ IF and 1060-㎒ LO frequency, proposed design demonstrates image (920 ㎒) rejection ratio of better than 60 ㏈ simultaneously achieving gain and output P1㏈ of 30 ㏈, -1 ㏈m respectively. The measured results are in good agreement with simulation results.

A SiGe BiCMOS Amplifier-Frequency Doubler Chain Operating for 284–328 GHz

유정환,김정수,윤종원,Kaynak Mehmet,이재성 한국전자파학회 2022 Journal of Electromagnetic Engineering and Science Vol.22 No.2

This work describes the development of an amplifier frequency doubler chain (AFDC) operating at around 300 GHz based on SiGe BiCMOS technology. The driver amplifier is based on the differential cascode configuration, which employs coupled-line transformers for compact design. The frequency doubler is based on the class-B topology, which is known for exhibiting a large output power with low DC power consumption. The integrated AFDC, which consists of the frequency doubler and the preceding driver amplifier, exhibited a measured peak output power and DC-to-RF efficiency of -0.9 dBm and 0.97%, respectively, along with a conversion gain of -0.1 dB. It operates from 284 to 328 GHz with a 0-dBm input signal, consuming a total DC power of only 84 mW. The chip size is 720 × 310 μm2, excluding RF and DC pads.

III-V 광소자 제작을 위한 ITO/n⁺lnP 옴 접촉 특성연구

황용한,한교용 한국전기전자재료학회 2002 전기전자재료학회논문지 Vol.15 No.5

The use of a thin film of indium between the ITO and the $n^+-lnP$ contact layers for InP/InGaAs HPTs was studied without degrading its excellent optical transmittance properties. $ITO/n^+-lnP$ ohmic contact was successfully achieved by the deposition of indium and annealing. The specific contact resistance of about $6.6{\times}10^{-4}\Omega\textrm{cm}^2$ was measured by use of the transmission line method (TLM). However, as the thermal annealing was just performed to $ITO/n^+-lnP$ contact without the deposition of indium between ITO and $n^+-lnP$, it exhibited Schottky characteristics. In the applications, the DC characteristics of InP/InGaAs HPTs with ITO emitter contacts was compared with those of InP/InGaAs HBTs with the opaque emitter contacts.