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In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-s...
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RISS 인기검색어
https://www.riss.kr/link?id=A107001080
-
저자
Jincan Zhang (Henan University of Science and Technology) ; Leiming Zhang (Henan University of Science and Technology) ; Min Liu (Henan University of Science and Technology) ; Liwen Zhang (Henan University of Science and Technology)
- 발행기관
- 학술지명
- 권호사항
-
발행연도
2020
-
작성언어
English
- 주제어
-
등재정보
KCI등재,SCIE,SCOPUS
-
자료형태
학술저널
-
수록면
372-380(9쪽)
-
KCI 피인용횟수
0
- 제공처
- 소장기관
-
0
상세조회 -
0
다운로드
부가정보
다국어 초록 (Multilingual Abstract)
In this paper, a systematic and rigorous extraction procedure for InP heterojunction bipolar transistor (HBT) π-type small-signal model parameters is proposed. The AC current crowding effect modeled as a parallel RC circuit is included in the small-signal model of InP HBTs. All of the elements parameters are acquired by means of a systematic and rigorous extraction method based on peeling algorithm, and there is no any simplified approximation. The extraction equations are derived from S-parameters by peeling peripheral elements from small-signal models to get reduced ones, so the extraction technique is more easily understood and clearer. The complete π-type model for an emitter-up InP HBT with 1×15 µm2 emitter area is established and validated, which shows that the small-signal equivalent circuit and elements values extraction method have very high accuracy.
참고문헌 (Reference)
1 M. Urteaga, "THz InP bipolar transistorscircuit integration and applications" 1-4, 2017
2 A. Oudir, "Smallsignal modeling of emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base" 54 (54): 67-78, 2010
3 M. Deng, "Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325GHz" 129 (129): 150-156, 2017
4 J. C. Zhang, "Modeling of InP HBTs with an improved Keysight HBT model" 62 (62): 56-62, 2019
5 Y. Sun, "Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout" 26 (26): 098502-, 2017
6 T. K. Johansen, "Improved external base resistance extraction for submicrometer InP/InGaAs DHBT models" 58 (58): 3004-3011, 2011
7 K. Lee, "Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model" 52 (52): 375-384, 2005
8 H. Taher, "Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor" 54 (54): 584-589, 2012
9 T. K. Johansen, "Direct extraction of InP/GaAsSb/InP DHBT equivalent-circuit elements from S–parameters measured at cut-off and normal bias conditions" 64 (64): 115-124, 2016
10 A. Oudir, "Direct extraction method of HBT equivalentcircuit elements relying exclusively on Sparameters measured at normal bias conditions" 59 (59): 1973-1982, 2011
1 M. Urteaga, "THz InP bipolar transistorscircuit integration and applications" 1-4, 2017
2 A. Oudir, "Smallsignal modeling of emitter-up HBT using an improved analytical approach. Application to InGaAlAs/GaAsSb/InP DHBT with strained base" 54 (54): 67-78, 2010
3 M. Deng, "Small-signal characterization and modelling of 55 nm SiGe BiCMOS HBT up to 325GHz" 129 (129): 150-156, 2017
4 J. C. Zhang, "Modeling of InP HBTs with an improved Keysight HBT model" 62 (62): 56-62, 2019
5 Y. Sun, "Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout" 26 (26): 098502-, 2017
6 T. K. Johansen, "Improved external base resistance extraction for submicrometer InP/InGaAs DHBT models" 58 (58): 3004-3011, 2011
7 K. Lee, "Direct parameter extraction of SiGe HBTs for the VBIC bipolar compact model" 52 (52): 375-384, 2005
8 H. Taher, "Direct extraction technique of π-topology small-signal equivalent circuit model for Si/SiGe heterojunction bipolar transistor" 54 (54): 584-589, 2012
9 T. K. Johansen, "Direct extraction of InP/GaAsSb/InP DHBT equivalent-circuit elements from S–parameters measured at cut-off and normal bias conditions" 64 (64): 115-124, 2016
10 A. Oudir, "Direct extraction method of HBT equivalentcircuit elements relying exclusively on Sparameters measured at normal bias conditions" 59 (59): 1973-1982, 2011
11 Y. Sun, "Direct analytical parameter extraction for SiGe HBTs T-topology small-signal equivalent circuit" 94 (94): 223-230, 2016
12 J. C. Zhang, "Design of a low-phase-noise Ka-band GaAs HBT VCO" 28 (28): 1950174-, 2019
13 G. Álvarez-Botero, "Consistent modeling and power gain analysis of microwave SiGe HBTs in CE and CB configurations" 63 (63): 3888-3895, 2015
14 J. Gao, "An approach to determine small-signal model parameters for InP-based heterojunction bipolar transistors" 19 (19): 138-145, 2006
15 A. Oudir, "An analytic procedure for extraction of metallic collector-up InP/InGaAsP/InGaAs HBT small signal equivalent circuit parameters" 52 (52): 1742-1750, 2008
16 J. C. Zhang, "A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit" 85 (85): 405-411, 2015
17 A. Zhang, "A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model" 150 (150): 45-50, 2018
18 W. B. Tang, "A new extraction technique for the complete small-signal equivalent-circuit model of InGaP/GaAs HBT including base contact impedance and AC current crowding effect" 54 (54): 3641-3647, 2006
19 J. L. Olvera-Cervantes, "A new analytical method for robust extraction of the small-signal equivalent circuit for SiGe HBTs operating at cryogenic temperatures" 56 (56): 568-574, 2008
20 Jincan Zhang, "A Watt-level Broadband Power Amplifier in GaAs HBT Process" 대한전자공학회 19 (19): 357-363, 2019
21 J. C.Zhang, "A Ku-band low-phase-noise cross-coupled VCO in GaAs HBT technology" 25 (25): 1650053-, 2016
22 Min Liu, "A 4.2-to-5.4 GHz stacked GaAs HBT power amplifier for C-band applications" Emerald 46 (46): 243-248, 2020
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분석정보
인용정보 인용지수 설명보기
학술지 이력
| 연월일 | 이력구분 | 이력상세 | 등재구분 |
|---|---|---|---|
| 2023 | 평가예정 | 해외DB학술지평가 신청대상 (해외등재 학술지 평가) | |
| 2020-01-01 | 평가 | 등재학술지 유지 (해외등재 학술지 평가) |  |
| 2014-01-21 | 학회명변경 | 영문명 : The Institute Of Electronics Engineers Of Korea -> The Institute of Electronics and Information Engineers | |
| 2010-11-25 | 학술지명변경 | 한글명 : JOURNAL OF SEMICONDUTOR TECHNOLOGY AND SCIENCE -> JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | |
| 2010-01-01 | 평가 | 등재학술지 선정 (등재후보2차) | |
| 2009-01-01 | 평가 | 등재후보 1차 PASS (등재후보1차) |  |
| 2007-01-01 | 평가 | 등재후보학술지 선정 (신규평가) | |
학술지 인용정보
| 기준연도 | WOS-KCI 통합IF(2년) | KCIF(2년) | KCIF(3년) |
|---|---|---|---|
| 2016 | 0.42 | 0.13 | 0.35 |
| KCIF(4년) | KCIF(5년) | 중심성지수(3년) | 즉시성지수 |
| 0.3 | 0.29 | 0.308 | 0.03 |
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