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Research on Li0.3Na0.18K0.52NO3 promoted Mg20Al-CO3 LDH/GO composites for CO2 capture
Ying Yang,Kai Chen,Liang Huang,Min Li,Taiping Zhang,Mi Zhong,Ping Ning,Junya Wang,Shikun Wen 한국공업화학회 2021 Journal of Industrial and Engineering Chemistry Vol.102 No.-
It has been reported that the addition of graphene oxide (GO) can increase the dispersion and heterogeneousnucleation of layered double hydroxide (LDH), thus providing more active sites, which is more conduciveto CO2 adsorption. Herein, we reported alkali metal nitrates ((Li0.3Na0.18K0.52)NO3) promoted LDHand GO composites (LDH/GO) as adsorbents for CO2 capture. The influence of mass ratio of LDH to GO, theimpregnation ratio of alkali metal nitrates, the calcination and adsorption temperature, as well as thecycling stability were investigated systematically. The results indicated that the CO2 capture capacityof LDH/GO composite with 30 mol% (Li0.3Na0.18K0.52)NO3 could reach 4.51 mmol g 1, which was 5.86times higher than LDH/GO1 without loading alkali metal nitrates. Moreover, it had outstanding CO2adsorption capacity in the range from 200 C to 320 C. In addition, the cyclic adsorption and desorptiontest manifested that the CO2 uptake of the material can reach 3.07 mmol g 1 after 22 cycles. We believethat this study will give a significant contribution to fabrication of LDH based composites as CO2 adsorbentsin future study.
Jia, Xiangling,Zhang, Chen,Liu, Juanjuan,Lv, Wei,Wang, Da-Wei,Tao, Ying,Li, Zhengjie,Zheng, Xiaoyu,Yu, Jong-Sung,Yang, Quan-Hong The Royal Society of Chemistry 2016 Nanoscale Vol.8 No.8
<P>A controllable drying strategy is proposed for the precise and non-destructive control over the structure of a 3D graphene assembly. Such an assembly is used as a model carbon material to investigate the pore structure-dependent shuttle effect and cycling performance of the cathode of a Li-S battery.</P>
Ying-Ying Zhang,Jungwoo Oh,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Ga-Won Lee,Majhi, P.,Hsing-Huang Tseng,Jammy, R.,Hi-Deok Lee IEEE 2010 IEEE TRANSACTIONS ON NANOTECHNOLOGY Vol.9 No.2
<P>In this paper, thermally stable Ni germanide using a Ni-Pt(1%) alloy and TiN capping layer is proposed for high-performance Ge MOSFETs. The proposed Ni-Pt(1%) alloy structure exhibits low-temperature germanidation with a wide temperature window for rapid thermal processing. Moreover, sheet resistance is stable and the germanide interface shows less agglomeration despite high-temperature postgermanidation anneal up to 550 <SUP>°</SUP>C for 30 min. In addition, the surface of the Ni-Pt(1%) alloy structure is smoother than that of a pure Ni structure both before and after the postgermanidation anneal. Only the NiGe phase and no other phases such as Pt<SUB>x</SUB>Ge<SUB>y</SUB> and Ni<SUB>x</SUB>Pt<SUB>1-x</SUB>Ge<SUB>y</SUB> can be observed in X-ray diffraction results, but X-ray photoelectron spectroscopy shows that PtGe is formed during the postgermanidation anneal. The larger Pt atomic radius is believed to inhibit the diffusion of Ni into the Si substrate, thereby improving the thermal stability of the NiGe. The higher melting point of PtGe is also believed to improve thermal stability. Therefore, this proposed Ni-Pt(1%) alloy could be promising for high-mobility Ge MOSFET applications.</P>
Stress Dependence of Thermal Stability of Nickel Silicide for Nano MOSFETs
Zhang, Ying-Ying,Lee, Won-Jae,Zhong, Zhun,Li, Shi-Guang,Jung, Soon-Yen,Lee, Ga-Won,Wang, Jin-Suk,Lee, Hi-Deok,Lim, Sung-Kyu The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.3
Dependence of the thermal stability of nickel silicide on the film stress of inter layer dielectric (ILD) layer has been investigated in this study and silicon nitride $(Si_3N_4)$ layer is used as an ILD layer. Nickel silicide was formed with a one-step rapid thermal process at $500^{\circ}C$ for 30 sec. $2000{\AA}$ thick $Si_3N_4$ layer was deposited using plasma enhanced chemical vapor deposition after the formation of Ni silicide and its stress was split from compressive stress to tensile stress by controlling the power of power sources. Stress level of each stress type was also split for thorough analysis. It is found that the thermal stability of nickel silicide strongly depends on the stress type as well as the stress level induced by the $Si_3N_4$ layer. In the case of high compressive stress, silicide agglomeration and its phase transformation from the low-resistivity nickel mono-silicide to the high-resistivity nickel di-silicide are retarded, and hence the thermal stability is obviously improved a lot. However, in the case of high tensile stress, the thermal stability shows the worst case among the stressed cases.
Use of the STR loci D18S53, D18S59, and D18S488 in the diagnosis of Edwards’ syndrome
Ying Zhang,Xiaozhou Li,Lijuan Sun,Yunfang Shi,Duan Ju,Yan Li,Tianfu Yue 한국유전학회 2016 Genes & Genomics Vol.38 No.7
The aim of this study was to investigate the feasibility of using short tandem repeats (STRs) to diagnose Edwards’ syndrome (ES). Quantitative fluorescence polymerase chain reaction (QF-PCR) was performed to amplify STR loci on chromosome 18, specifically D18S53, D18S59, and D18S488. The amplified products were subjected to a fluorescence signal analysis and their application to ES diagnosis was examined. Among the 807 cases that showed normal results in the karyotype analysis, 793 showed one or two fluorescence bands with a fluorescence intensity ratio of 1:1, and 14 cases showed 3 bands, which were false-positive results. ES was diagnosed in 9 samples. The sensitivities of D18S53, D18S59, and D18S488 for the diagnosis of ES were 77.78, 44.44, and 55.56 % and the specificities were 96.16, 96.03, and 96.28 %, respectively. The combined sensitivity of the three loci for diagnosing DS was 100 % (9/9), with a specificity of 98.27 % (793/ 807). QF-PCR amplification of STR loci had high sensitivity, strong specificity, and was simple and rapid. Thus, it might have wide clinical applications, and could be an ideal tool for large-scale genetic and prenatal diagnosis of ES.
Li, Hai-Long,Xie, Shou-Pin,Yang, Ya-Li,Cheng, Ying-Xia,Zhang, Ying,Wang, Jing,Wang, Yong,Liu, Da-Long,Chen, Zhao-Feng,Zhou, Yong-Ning,Wu, Hong-Yan Asian Pacific Journal of Cancer Prevention 2015 Asian Pacific journal of cancer prevention Vol.16 No.5
Background: miRNAs are relatively recently discovered cancer biomarkers which have important implications for cancer early diagnosis, treatment and estimation of prognosis. Here we focussed on expression of mir-196a-5p in gastric cancer tissues and cell lines so as to analyse its significance for clinicopathologic characteristics and generate enriched KEGG pathways clustered by target genes for exploring its potential roles as a biomarker in gastric cancer. Materials and Methods: The expression of mir-196a-5p in poorly, moderate and well differentiated gastric cancer cell lines compared with GES-1 was detected by RT-qPCR, and the expression of mir-196a-5p in gastric cancer tissues comparing with adjacent non cancer tissues of 58 cases were also assessed by RT-qPCR. Subsequently, an analysis of clinical significance of mir-196a-5p in gastric cancer and enriched KEGG pathways was executed based on the miRWalk prediction database combined with bioinformatics tools DAVID 6.7 and Mirfocus 3.0. Results: RT-qPCR showed that mir-196a-5p was up-regulated in 6 poorly and moderate differentiated gastric cancer cell lines SGC-7901, MKN-45, MKN-28, MGC-803, BGC-823, HGC-27 compared with GES-1, but down-regulated in the highly differentiated gastric cancer cell line AGS. Clinical data indicated mir-196a-5p to beup-regulated in gastric cancer tissues (47/58). Overexpression of mir-196a-5p was associated with more extensive degree of lymph node metastasis and clinical stage (P < 0.05; x2 test). Enriched KEGG pathway analyses of predicted and validated targets in miRWalk combined with DAVID 6.7 and Mirfocus 3.0 showed that the targeted genes regulated by mir-196a-5p were involved in malignancy associated biology. Conclusions: Overexpression of mir-196a-5p is associated with lymph node metastasis and clinical stage, and enriched KEGG pathway analyses showed that targeted genes regulated by mir-196a-5p may contribute to tumorgenesis, suggesting roles as an oncogenic miRNA biomarker in gastric cancer.
Ying-Ying Zhang,Jungwoo Oh,In-Shik Han,Zhun Zhong,Shi-Guang Li,Soon-Yen Jung,Kee-Young Park,Hong-Sik Shin,Won-Ho Choi,Hyuk-Min Kwon,Wei-Yip Loh,Majhi, P.,Jammy, R.,Hi-Deok Lee IEEE 2009 IEEE transactions on electron devices Vol.56 No.2
<P>Highly thermally stable Ni germanide technology for high performance germanium metal-oxide-semiconductor field-effect transistors (Ge MOSFETs) is proposed, utilizing Pd incorporation into Ni germanide. The proposed Ni germanide shows not only the improvement of thermal stability but also the reduction of hole barrier height, which can improve the device on-current by reducing the Ni germanide to p+ source/drain contact resistance. The proposed Ni germanide showed a stable sheet resistance of up to 500 degrees C 30-min postgermanidation annealing due to the suppression of agglomeration and oxidation of Ni germanide and the diffusion of Ni and Ge atoms by the incorporated Pd. Therefore, the proposed Ni0.95Pd0.05, alloy could be promising for the high mobility Ge MOSFET applications.</P>
Ni Germanide Utilizing Ytterbium Interlayer for High-Performance Ge MOSFETs
Zhang, Ying-Ying,Oh, Jungwoo,Li, Shi-Guang,Jung, Soon-Yen,Park, Kee-Young,Shin, Hong-Sik,Lee, Ga-Won,Wang, Jin-Suk,Majhi, Prashant,Tseng, Hsing-Huang,Jammy, Raj,Bae, Tae-Sung,Lee, Hi-Deok The Electrochemical Society 2009 Electrochemical and solid-state letters Vol.12 No.1
Ying-Hua Li,Yin-Yin Wang,Shan Zhong,Zhi-Li Rong,Yong-Ming Ren,Zhi-Yong Li,Shu-Ping Zhang,Zhi-Jie Chang,Li Liu 한국분자세포생물학회 2009 Molecules and cells Vol.27 No.1
Ligand-dependent or independent oligomerization of receptor protein tyrosine kinase (RPTK) is often an essential step for receptor activation and intracellular signaling. The novel oncogene with kinase-domain (NOK) is a unique RPTK that almost completely lacks an ectodomain, expresses intracellularly and activates constitutively. However, it is unknown whether NOK can form oligomer or what function oligomerization would have. In this study, two NOK deletion mutants were generated by either removing the ectodomain (NOKECD) or including the endodomain (NOK-ICD). Co-immunoprecipitation demonstrated that the transmembrane (TM) domain of NOK was essential for its intermolecular interaction. The results further showed that NOK aggregated more closely as lower order oligomers (the dimer- and trimer-sized) than either deletion mutant did since NOK could be cross-linked by both Sulfo-EGS and formaldehyde, whereas either deletion mutant was only sensitive to Sulfo-EGS. Removing the NOK TM domain (NOK-ICD) not only markedly promoted higher order oligomerization, but also altered the subcellular localization of NOK and dramatically elevated the NOK-mediated constitutive activation of extracellular signal-regulated kinase (ERK). Moreover, NOK-ICD but not NOK or NOKECD was co-localized with the upstream signaling molecule RAS on cell membrane. Thus, TM-mediated intermolecular contacting may be mainly responsible for the constitutive activation of NOK and contribute to the autoinhibitory effect on RAS/MAPK signaling.
Ying-Ying Zhang,In-Shik Han,Shi-Guang Li,Soon-Yen Jung,박기영,신홍식,Ga-Won Lee,왕진석,이희덕,오정우,Prashant Majhi,Raj Jammy 한국물리학회 2009 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.55 No.3
In this research, the influence of an interlayer dielectric (ILD) capping layer on the thermal stability of Ni germanide was analyzed. The Ni germanide was formed on a Ge-on-Si substrate by using a one-step rapid thermal process (RTP) at 400 ˚C for 30 sec. We found little difference in the X-ray diffraction (XRD) results, but the proposed structure with oxide ILD capping layer showed better thermal immunity than that without one. Adopting an oxide ILD capping layer resulted in a lower sheet resistance, less surface roughness, and less Ni germanide agglomeration and penetration after high temperature post-germanidation annealing at 500 ˚C. Therefore, oxide capping is promising for improving the thermal stability of Ni germanide for nanoscale germanium metal oxide semiconductor field effect transistors (Ge MOSFETs).