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이용현,이용수,권혁주,오세철 경북대학교 센서기술연구소 1993 연차보고서 Vol.1993 No.-
본 연구에서는 PTC 서미스터를 제조하기 위한 (Ba_xSr_1-x)TiO_3 분말을 제조하는 공정에 대한 연구를 하였다. 먼저 원료분말을 X-선 회절분석과 시차열분석 및 열무게분석, 전자현미경 사진으로 조사하였으며 하소후의 분말상태를 같은 방법으로 조사하였다. 하소온도에 따라 BaTiO_3 상이 형성되는 것을 조사하기 위하여 X-선 회절분석과 시차열분석 및 열무게분석을 행하고, 이 분말들을 이용하여 2ton/㎠에서 60초 동안 성형을 하고 소결을 하여 분말의 조성 변화에 따른 저항률-온도 특성을 조사하였다. 시차열분석 및 열무게분석으로 PVA의 방출을 확인하였다. 또한 원료분말 및 볼밀후, 하소후, PVA를 첨가한 후, 소결후의 시편의 전자현미경 사진을 통하여 입자의 성장과정을 조사하였다. 또 첨가불순물의 조성변화에 따른 특성을 조사하였다. Al_2O_3, SiO_2, Nb_2O_5 그리고 MnO_2 등의 분순물을 첨가하여 PTC 서미스터를 제조하였으며 불순물의 첨가량에 따른 평균입경 및 PTC 특성도 조사하였다. 진공열증착법으로 5×10 exp (-5) Torr에서 Al을 증착시킨 후 400℃에서 1시간 동안 질소분위기에서 열처리한 후 저항성접촉 전극을 형성시켰다. 이렇게 제조된 PTC 서미스터를 사용하여 유속센서를 제작하였으며 그 동작특성을 조사하였다. We have studied the manufacturing process to fabricate (Ba_xSr_1-x)TiO_3 powder for the PTC thermistor and resistivity-temperature characteristics. Raw materials and calcinated powders were specified using XRD, TG/DTA and SEM. Synthesis of BaTiO_3 and dissipation of PVA were investigated using XRD and TG/DTA according to the calcination temperature. The powder was pressed at 2ton/㎠ for 60sec. and sintered. The effects of additives for the PTC thermistor were also analyzed. The growth of the grain in the PTC thermistor was investigated using SEM. Barium titanate powder was made from BaCO_3 and TiO_2 powders and the PTC thermistor was made from the powder contained Al_2O_3, SiO_2 and Nb_2O_5. Al was thermally evaporated for the electrode under the pressure of 5×10 exp (-5) Torr and the electrode was heated at 400℃ for 1 hour in the nitrogen atmosphere. We manufactured and the flow sensor and certified their operations.
한국인에서 일광 노출의 유해성에 대한 인지도와 일광 차단제의 이용 행태에 대한 연구
김상태,김기호,오선진,이승철,강세훈,윤재일,김진준,박석범,김홍용 대한피부과학회 1999 大韓皮膚科學會誌 Vol.37 No.6
Background: Although deleterious effects of sunlight have been increased recently, the surveillance of the attitudes toward sun-exposure and the behavioral aspect of using sunscreens in Koreans has hot been carried out. Objective: Our purpose was to evaluate the attitude toward the harmfulness of sun-exposure and behaviors of using sunscreens in Korea. Method: Five hundred and fifty-two subjects were surveyed to assess the attitude toward sun-exposure, as well as the subjects knowledge about, and the use of sunscreens. Underlying data including demographic data, skin colors, skin types, occupation, and sun-exposure, were obtained. Results: Fifty-four percent of subjects believed that sun-exposure is bad for their skins, but, on the contrary, 12.5% believed it to be beneficial. Fifty-two percent of subjects used sunscreens. Almost all subjects(93.8%) knew why to use sunscreens but 62.7% of subjects did not know the meaning of sun protective factors(SPF). Women, indoor workers, subjects less than 40 years old, with less sun-exposed, fair colored skin, or with skin type I, II, III tended to know the deleterious effects of sunlight and the meaning of SPF and used more sunscreen. Conclusion: High risk population-men, outdoor workers, subjects oider than 40 years old, with more sun-exposed, dark colored skin, or skin type VI, V could be targeted with campaigns that promote attitudinal and behavioral changes.
10 V 이하의 프로그래밍 전압을 갖는 Ta2O5/SiO2 로 구성된 안티휴즈 소자
이재성,오세철,류창명,이용수,이용현 ( Jae Sung Lee,Seh Chul Oh,Chang Myung Ryu,Yong Soo Lee,Yong Hyun Lee ) 한국센서학회 1995 센서학회지 Vol.4 No.3
This paper presents the fabrication of ametal-insulator-metal(MIM) antifuse structure consisting of insulators sandwiched between top electrode, Al, and bottom electrode, TiW and additionally studies on antifuse properties depending on the condition of insulator. The intermetallic insulators, prepared by means of sputter, comprised of silicon oxide and tantalum oxide. In such an antifuse structure, silicon oxide layer is utilized to decrease the leakage current and tantalum oxide layer, of which the dielectric strength is lower than that of silicon oxide, is also utilized to lower the breakdown voltage near 10V. Finally sufficient low leakage current, below InA, and low programming voltage, about 9V; could be obtained in antifuse device comprising Al/Ta₂O₃(10nm)/SiO₂=(10nm)/TiW structure and OFF resistance of 3.65㏁ and ON resistance of 7.26Ω could be also obtained. This Ta₂O₃/ SiO₂= based antifuse structures will be promising for highly reliable programmable device.