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Young Am Chae(蔡永岩),Jin Jeung(鄭進),Jung Kee Heu(許貞基),Jung Won Lee(李正源) 한국육종학회 1988 한국육종학회지 Vol.20 No.1
As callus was subcultured on higher salt medium in stepweise manner, both fresh and dry wet. were increased, and Na⁺ uptake was continuously increased while K⁺ uptake decreased accordingly. H⁺ -pumping activity and glucose-6-p dehydrogenase activity were elevated in salt-adapted callus cells compared with the control.
김종기,정진봉,백주열,이기암 단국대학교 신소재기술연구소 1993 신소재 Vol.3 No.-
DC Magnetron Sputtering 법으로 제조된 Ni_1-xFe_x 박막에 대해 박막의 두께 및 시편의 조성비가 자기저항비에 미치는 영향에 대하여 조사하였다. 시편의 조성비는 Fe chip의 개수로 조정하였으며, 박막의 두께는 400∼1600Å으로 변화시켰다. 복합타겟의 구성방법은 개량된 모자이크방식이었고, 자기저항비는 4-point probe를 이용하여 측정하였다. Fe의 조성이 증가함에 따라서 자기저항비는 증가하였으며, 조성이 x≒11에서 최대가 되었고, 두께가 증가함에 따라 자기저항비도 증가하였다. 제작된 모든 시편은 비정질구조를 나타내었다. We have investigated the magnetoresistance ratio on the influence of film thickness and range of sample composition about Ni_1-xFe_x Thin Film produced by DC Magnetron Sputtering. The range of sample composition was controlled by the number of Fe chips, and the range of deposited film was 400Å to 1600Å. Target formation was the improved mosaic type, and magnetoresistance ratio measured by 4-point probe method. The magnetoresistance ratio was increased with the increase of film thickness, and the magnetoresistance ratio was varied with sample composition. All samples were showed amorphous structure.
α-Fe₂O₃ / NiFe / Cu / NiFe 스핀밸브 박막에서의 자기저항 특성에 대한 연구
김종기(Jong-Kee Kim),주호완(Ho-Wan Joo),이기암(Ky-Am Lee),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee) 한국자기학회 2000 韓國磁氣學會誌 Vol.10 No.1
We investigated the magnetoresistance effect and the exchange coupling of antiferromagnetic Fe₂O₃ spin-valve film. The X-ray diffractions of the spin-valve films having a different thickness of a α-Fe₂O₃ were measured. The exchange coupling field (Hex) between Fe₂O₃ and pinned NiFe layer was increased from 13.5 Oe to 84.5 Oe, as the thickness of Fe₂O₃ increased from 400 Å to 800 Å. The surface roughness of α-Fe₂O₃ spin-valves increased with the increase of α-Fe₂O₃ thickness. Therefore, the increase of Hex will be due to the increase of the interface roughness. The MR ratios as a function of Fe₂O₃ thickness was not changed. And Hex increased by the increment of magnetostatic coupling between Fe₂O₃ and NiFe (pinned-layer) due to the increment of interface roughness. Hex depends on the surface roughness, but the magnetoresistance ratio doesn't.
자연산화된 자유층을 갖는 NiO 스핀밸브 박막의 자기저항특성
김종기(Jong-Kee Kim),주호완(Ho-Wan Joo),이기암(Ky-Am Lee),황도근(Do-Guwn Hwang),이상석(Sang-Suk Lee),박달호(Dal-Ho Park) 한국자기학회 2001 韓國磁氣學會誌 Vol.11 No.3
The effect of specular electron scattering on natural oxidation of free layer in NiO spin valves have been investigated. The magnetoresistance (MR) ratio and the exchange biasing field (Hex) of NiO(600 Å)/Ni_(81)Fe_(19)(50 Å)/Co(7 Å)/Cu(20 Å)/ Co(7 Å)/Ni_(81)Fe_(19)(70 Å) spin valves were increased from 4.9 % to 7.3 %, and 110 Oe to 170 Oe after natural oxidation in the atmosphere for 80 days, respectively. The sheet resistivity p decreased from 28 μΩm to 17 μΩm, but Δp did not almost change after the oxidation. The spin valves enhanced by the specular electron scattering in the naturally oxidized Co/NiFe/NiFeOx, free layer were confirmed from the depth profiles using Auger electron spectroscopy.
이방성 자기저항측정을 이용한 NiO / NiFe 박막의 교환결합연구
김종기(Jong-Kee Kim),김선욱(Sun-Wook Kim),이기암(Ky-Am Lee),이상석(Sang-Suk Lee),황도근(Do-Guwn Hwang) 한국자기학회 2002 韓國磁氣學會誌 Vol.12 No.4
We report an experimental evidence of coexistence of the strong and weak exchange couplings in unidirectional NiO/NiFe (antiferromagnetic/ferromagnetic) bilayer thin films. The exchange bias was measured by VSM and AMR techniques and then, analyzed into the strong and weak exchange couplings by means of a regression method. In NiO(60 ㎚)/NiFe(10 ㎚) film, the ratio of the weak exchange coupling field over the average exchange coupling field was found to be almost unchanged within a range from 0.2 to 0.4 irrespective to the strength of an applied field. However, the ratio increased among the samples with decreasing the average exchange coupling field due to the increment of the weak exchange coupling area.