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Kim, Jaehyeong,Jang, Jaeman,Bae, Minkyung,Lee, Jaewook,Kim, Woojoon,Hur, Inseok,Jeong, Hyun Kwang,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Inseok Hur,Hagyoul Bae,Woojoon Kim,Jaehyeong Kim,Hyun Kwang Jeong,Chunhyung Jo,Sungwoo Jun,Jaewook Lee,Yun Hyeok Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2013 IEEE electron device letters Vol.34 No.2
<P>Due to voltage drops across parasitic resistances in semiconductor devices, extracted performance parameters can be strongly dependent on the geometrical structure. In this letter, we report a characterization technique for the intrinsic field-effect mobility μ<SUB>FEo</SUB> in amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) by de-embedding the parasitic source and drain resistances <I>R</I><SUB>S</SUB> and <I>R</I><SUB>D</SUB>, respectively. We obtained the channel-length (<I>L</I>) -independent intrinsic field-effect mobility μ<SUB>FEo</SUB> from TFTs with various channel lengths on the same wafer. We expect that this characterization technique for <I>L</I>-independent intrinsic field-effect mobility is useful for accurate characterization, consistent modeling, and robust simulation of a-IGZO TFT circuits.</P>
Jang, Inseok,Kim, Juseong,Kim, Hyeon,Kim, Wan-Ho,Jeon, Sie-Wook,Kim, Jae-Pil Elsevier 2017 Colloids and surfaces. A, Physicochemical and engi Vol.520 No.-
<P><B>Abstract</B></P> <P>The water resistance and photo-efficiency of K<SUB>2</SUB>SiF<SUB>6</SUB>:Mn<SUP>4+</SUP> phosphor (KSF) was improved without sacrificing the optical properties through plasma treatment. Hexadecyltrimethocysilane, having a main carbon chain (C<SUB>16</SUB>), was introduced on the surface of KSF for the hydrophobic modification. After the treatment, the water contact angle dramatically raised from 6.6 to 122.5°, indicating the reinforcement of waterproof property. Moreover, the optical properties of phosphor were improved due to the increment of light absorption and reduction of hydroxyl quenching effect. The high photometric flux could be achieved in LED device fabricated with modified KSF, which is about 12.8% higher than reference device. It is contributed to the improvement of dispersibility of phosphor by enhancing the affinity between phosphor and encapsulant.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The dry-type surface modification was performed on water-vulnerable phosphor (K<SUB>2</SUB>SiF<SUB>6</SUB>:Mn<SUP>4+</SUP>). </LI> <LI> After the treatment, the water contact angle dramatically raised from 6.6 to 122.5°, indicating the reinforcement of waterproof property. </LI> <LI> The optical nature of phosphor was increased due to enhancement of light absorption and suppression of quenching effect. </LI> <LI> The enhancement of photo-performance of LED device could be successfully achieved by improving the dispersibility of phosphor in encapsulant. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>K<SUB>2</SUB>SiF<SUB>6</SUB>:Mn<SUP>4+</SUP> phosphor with a high water-resistance property.</P> <P>[DISPLAY OMISSION]</P>
Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jaewook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Jang, Inseok,Shin, Kyung-Ho,Yang, Il,Kim, Hyeon,Kim, Juseong,Kim, Wan-Ho,Jeon, Sie-Wook,Kim, Jae-Pil Elsevier 2017 Colloids and surfaces. A, Physicochemical and engi Vol.518 No.-
<P><B>Abstract</B></P> <P>The thermal conductivity of boron nitride/epoxy composite was increased by up to 45.4% through surface modification of BN. The silane coupling agents with different main carbon chain (C3 and C16) were introduced on the BN surface through sol-gel reaction to improve the affinity of BN with epoxy resin. The surface-modified BN exhibits the higher dispersibility in epoxy than as-prepared BN. In the case of the modified BN samples, the dispersion was more stable as increasing the length of carbon main chain of silane. It means that the higher interfacial adhesion of BN/epoxy composite could be obtained by introducing the longer carbon chain on BN surface. Using the surface modification, the thermal conductivity of the treated BN with HDTMS reached to 3.49W/mK through decrease of the thermal contact resistance at the BN/epoxy interface. As a result, the enhancement of thermal conductivity could be controlled by varying the surface property of BN.</P> <P><B>Highlights</B></P> <P> <UL> <LI> The surface of Boron nitride (BN) was modified with different silanes in order to control the BN surface property. </LI> <LI> The affinity of BN with epoxy resin was effectively improved as increasing the carbon chain length of silane, resulting in the increment of adhesion BN/epoxy. </LI> <LI> The enhancement of thermal conductivity of BN/epoxy composite could be successfully achieved by decreasing the thermal contact resistance at the BN/epoxy interface. </LI> </UL> </P> <P><B>Graphical abstract</B></P> <P>Schematic illustration for the mechanism of surface modification of BN with silane.</P> <P>[DISPLAY OMISSION]</P>
Physics-Based SPICE Model of a-InGaZnO Thin-Film Transistor Using Verilog-A
Yong Woo Jeon,Inseok Hur,Yongsik Kim,Minkyung Bae,Hyun Kwang Jung,Dongsik Kong,Woojoon Kim,Jaehyeong Kim,Jaeman Jang,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.3
In this work, we report the physics-based SPICE model of amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) and demonstrate the SPICE simulation of amorphous InGaZnO (aIGZO) TFT inverter by using Verilog-A. As key physical parameter, subgap density-of-states (DOS) is extracted and used for calculating the electric potential, carrier density, and mobility along the depth direction of active thin-film. It is confirmed that the proposed DOS-based SPICE model can successfully reproduce the voltage transfer characteristic of a-IGZO inverter as well as the measured I-V characteristics of a-IGZO TFTs within the average error of 6% at V/)/)=20 V.
Minkyung Bae,Yongsik Kim,Dongsik Kong,Hyun Kwang Jeong,Woojoon Kim,Jaehyeong Kim,Inseok Hur,Dong Myong Kim,Dae Hwan Kim IEEE 2011 IEEE electron device letters Vol.32 No.11
<P>Analytical drain current and gate capacitance models for amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) over sub- and above-threshold regions are proposed by adopting an effective carrier density for the dominant carrier density. The effective carrier density fully considers the free carriers in the conduction band, the localized subgap deep states, and tail states over the bandgap for analytical <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed analytical models are verified by comparing the measured <I>I</I>-<I>V</I> and <I>C</I>-<I>V</I> characteristics. The proposed models make a time-efficient simulation of a-IGZO TFT-based circuits possible due to their analytical form.</P>