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Jaeman Jang,Jae Chul Park,Dongsik Kong,Kim, D. M.,Jang-Sik Lee,Byeong-Hyeok Sohn,Il Hwan Cho,Dae Hwan Kim IEEE 2011 IEEE transactions on electron devices Vol.58 No.11
<P>The amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT)-based nonvolatile transparent Flash memory devices were fabricated with gold (Au) nanocrystal storage layer. The performance and the reliability of transparent memory devices have been characterized by experiment and technology computer-aided design simulation. This memory device shows a large-enough memory window ΔV = 4.7 V at the program/erase (P/E) voltage <I>V</I><SUB>PGM</SUB>/<I>V</I><SUB>ERS</SUB> = 35/-35 V for the P/E time <I>T</I><SUB>PGM</SUB>/ <I>T</I><SUB>ERS</SUB> = 3/25 s. The memory window was kept almost the same after 1050 P/E cycles; however, the center voltage of the memory window (<I>VC</I>) was shifted in a negative direction. The cycling effect was explained by the change in the density of states (DOS) and the acceptor-like interface-trap density <I>D</I><SUB>itA</SUB>(<I>E</I>) in the a-IGZO channel layer with increasing P/E cycles. The main mechanism for the change in <I>VC</I> was found to be the accelerated injection of holes into the gate insulator due to the energy band bending during the erase operation.</P>
이지율,Jang Jaeman,Chung Jong Won,윤민호,김대환 한국물리학회 2021 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.79 No.11
To rationally design and synthesize organic semiconductor materials and optimize the printing processes of semiconductor films, it is necessary to understand the charge transport behavior of inkjet-printed organic semiconductor films. Herein, the temperature and gate-bias-dependent charge transport behaviors in a polymer field-effect transistor (PFET) were studied. The PFET used a poly[(tetryldodecyloctathiophene-alt-didodecylbithiazole)-co-(tetryldodecylhexathiophene-alt-didodecylbithiazole)] (P(8T2Z-co-6T2Z)-12) polymer film formed by inkjet printing as the active channel layer. The temperaturedependent mobility curves of the PFET measured under various gate-bias conditions fit well with the multiple trap and release (MTR) model and polaron hopping transport model (PHM) at temperatures below and above 250 K, respectively. The charge transport behaviors in the inkjet-printed P(8T2Z-co-6T2Z)-12 film were revealed through a combination of the MTR model and PHM. At temperatures below 250 K, charge carriers were negligibly affected by lattice vibration and required a low activation energy to move from site to site. In contrast, at temperatures above 250 K, charge carriers gradually coupled with phonons under the influence of lattice vibration and thus required a relatively higher activation energy. The insight into charge transport obtained through this study would provide practical benefits for the development of organic electronic device design and fabrication.
Hagyoul Bae,Jaeman Jang,Ja Sun Shin,Daeyoun Yun,Jieun Lee,Tae Wan Kim,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.6
<P>A new technique for a separate extraction of the current-path-dependent resistance (R<SUB>SD0</SUB>) from the contact-dependent source and drain resistances (R<SUB>Se</SUB> and R<SUB>De</SUB>) is reported for a single MOSFET. We also report a technique for a separation of V<SUB>GS</SUB>-dependent source and drain resistance (R<SUB>SDi</SUB>) from the V<SUB>GS</SUB>- and L<SUB>eff</SUB>-dependent channel resistance (R<SUB>ch</SUB>) with multiple MOSFETs. We confirm the proposed techniques applied to n-channel MOSFETs with various W/L combinations and obtain R<SUB>Se</SUB> = 10.5 - 12.4 Ω , R<SUB>De</SUB> ≅ 12.7 Ω, and R<SUB>SD0</SUB> = 4.7 Ω for W = 10 μm. V<SUB>GS</SUB>-dependent but L-independent R<SUB>SDi</SUB> is extracted to be 2.8 - 4.2 Ω.</P>
SCI를 기반으로 한 공유메모리 다중처리기를 위한 PCI - SCI 브리지
장영배(Youngbae Jang),조정연(Jungyon Cho),정한조(Hanjo Jung),손영철(Young Chul Sohn),김재만(Jaeman Kim),이종민(Jong-Min Lee),맹승렬(Seung Ryoul Maeng),조정완(Jung Wan Cho) 한국정보과학회 1997 한국정보과학회 학술발표논문집 Vol.24 No.1A
다중처리기 시스템을 구성하는데 있어서 기반이 되는 상호연결망의 성능은 시스템의 성능을 결정하는 중요한 요소가 된다. 본 논문에서는 좋은 확장성과 높은 대역폭을 제공하는 노드간 표준 인터페이스(IEEE Std 1596)인 SCI를 사용한 한국과학기술원 근거리 다중처리기 시스템의 핵심이 되는 PCI-SCI 브리지의 설계와 구현에 대해 기술한다. PCI-SCI 브리지는 공유메모리 및 메시지 전달 방식을 모두 지원하며 이를 구동하기 위한 장치 구동기와 소프트웨어 개발환경도 개발되었다. 현재는 비일관적인 공유메모리 방식을 지원하도록 구현되었다.
Jaewook Lee,Jaeman Jang,Hyeongjung Kim,Jiyoul Lee,Bang-Lin Lee,Sung-Jin Choi,Dong Myong Kim,Dae Hwan Kim,Kyung Rok Kim IEEE 2014 IEEE electron device letters Vol.35 No.3
<P>The physical origins of the negative-bias stress (NBS) instability in polymer-based thin-film transistors have been characterized. Through the quantitative analysis by TCAD simulation for the NBS time-dependent experimental results, the threshold voltage (V<SUB>T</SUB>)-shift by sub-bandgap density-of-states redistribution forms 70% and 78% for the measured total V<SUB>T</SUB>-shift while V<SUB>T</SUB>-shift by gate oxide charge trapping only takes 30% and 22% at NBS time of 3000 and 7000 s, respectively. In addition, the increase of source/drain Schottky contact resistance (R<SUB>SD</SUB>) is the main reason for NBS-induced on -current (I<SUB>ON</SUB>) degradation.</P>
Jaehyeong Kim,Jaeman Jang,Minkyung Bae,Jaewook Lee,Woojoon Kim,Inseok Hur,Hyun Kwang Jeong,Dong Myong Kim,Dae Hwan Kim 대한전자공학회 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Kim, Jaehyeong,Jang, Jaeman,Bae, Minkyung,Lee, Jaewook,Kim, Woojoon,Hur, Inseok,Jeong, Hyun Kwang,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2013 Journal of semiconductor technology and science Vol.13 No.1
In this work, we report extraction of the density-of-states (DOS) in polymer-based organic thin film transistors through the multi-frequency C-V spectroscopy. Extracted DOS is implemented into a TCAD simulator and obtained a consistent output curves with non-linear characteristics considering the contact resistance effect. We employed a Schottky contact model for the source and drain to fully reproduce a strong nonlinearity with proper physical mechanisms in the output characteristics even under a very small drain biases. For experimental verification of the model and extracted DOS, 2 different OTFTs (P3HT and PQT-12) are employed. By controlling the Schottky contact model parameters in the TCAD simulator, we accurately reproduced the nonlinearity in the output characteristics of OTFT.
Kim, Jonghwa,Choi, Sungju,Jang, Jaeman,Jang, Jun Tae,Kim, Jungmok,Choi, Sung-Jin,Kim, Dong Myong,Kim, Dae Hwan The Institute of Electronics and Information Engin 2015 Journal of semiconductor technology and science Vol.15 No.5
We quantitatively investigated instability mechanisms under simultaneous positive gate and drain bias stress (SPGDBS) in self-aligned top-gate amorphous indium-zinc-oxide thin-film transistors. After SPGDBS ($V_{GS}=13V$and $V_{DS}=13V$), the parallel shift of the transfer curve into a negative $V_{GS}$ direction and the increase of on current were observed. In order to quantitatively analyze mechanisms of the SPGDBS-induced negative shift of threshold voltage (${\Delta}V_T$), we experimentally extracted the density-of-state, and then analyzed by comparing and combining measurement data and TCAD simulation. As results, 19% and 81% of ${\Delta}V_T$ were taken to the donor-state creation and the hole trapping, respectively. This donor-state seems to be doubly ionized oxygen vacancy ($V{_O}^{2+}$). In addition, it was also confirmed that the wider channel width corresponds with more negative ${\Delta}V_T$. It means that both the donor-state creation and hole trapping can be enhanced due to the increase in self-heating as the width becomes wider. Lastly, all analyzed results were verified by reproducing transfer curves through TCAD simulation.
Differential Body-Factor Technique for Characterization of Interface Traps in MOSFETs
Daeyoun Yun,Minkyung Bae,Jaeman Jang,Hagyoul Bae,Ja Sun Shin,Euiyeon Hong,Jieun Lee,Dae Hwan Kim,Dong Myong Kim IEEE 2011 IEEE electron device letters Vol.32 No.9
<P>A differential body-factor technique (DBT) is proposed for characterization of interface traps in MOSFETs employing the differential body factor <I>dm</I>/<I>dV</I><SUB>GS</SUB> instead of the subthreshold slope or the body factor itself. The DBT is independent of the threshold voltage variation and advantageous to apply to MOSFETs with strong nonlinearity in the subthreshold slope caused by a nonuniform distribution of traps over the band gap. We applied the DBT to n- and p-MOSFETs with <I>W</I>/<I>L</I> = 5/0.13, 5/0.18, and 2/0.13μm/μm on the same wafer and obtained identical results. Extracted interface trap density ranges <I>D</I><SUB>it</SUB> = 10<SUP>10</SUP>-10<SUP>11</SUP> cm<SUP>-2</SUP>eV<SUP>-1</SUP> with a U-shaped distribution over the band gap.</P>