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Electrical power loss model for large-area monolithic organic photovoltaic module
Lyu, Hong-kun,Jeong, Seonju,Sim, Jun Hyoung,Woo, Sungho,Kim, Kang-Pil,Shin, Jang-Kyoo,Han, Yoon Soo Elsevier 2011 Current Applied Physics Vol.11 No.1
<P><B>Abstract</B></P><P>We designed an electrical power loss model to minimize the electrical power losses in large-area monolithic organic photovoltaic (m-OPV) modules. Using the electrical power loss model, we calculated the parasitic electrical power losses on the transparent conductive oxide layer by considering the series resistance and shading losses. We fabricated a unit organic photovoltaic (OPV) cell as a reference and extracted its electrical parameters such as voltage and current density under the maximum power output condition. We calculated the electrical losses using the proposed electrical power loss model by applying these extracted parameters of the unit OPV cell. From the results of the electrical power loss model, the pattern length of the active area of a single OPV cell was determined to be 9 mm, indicating that we can place seven OPV cells in an active area of 84 mm × 90 mm.</P> <P><B>Highlights</B></P><P>► Proposed a new electrical power loss model to enhance the PCE of a monolithic OPV module. ► Calculated an optimum cell dimension using the new electrical power loss model. ► Shown the aspects of the total power loss ratio for several different shading lengths. ► Shown the aspects of the total power loss ratio for several different sheet resistances.</P>
Formation of a Vertical MOSFET for Charge Sensing in a Si Micro-Fluidic Channel
Hong-Kun Lyu,신장규,Chin-Sung Park,Dong-Sun Kim,Geunbae Lim,Hey-Jung Park,Jong-Hyun Lee,최평 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.44 No.1
We have formed a uidic channel that can be used in micro- uidic systems and fabricated a 3-dimensional vertical metal-oxide semiconductor field-effect transistor (vertical MOSFET) in the convex corner of a Si micro- uidic channel by using an anisotropic tetramethyl ammonium hydroxide (TMAH) etching solution. A Au/Cr layer was used for the gate metal and might be useful for detecting charged biomolecules. The electrical characteristics of the vertical MOSFET and its operation as a chemical sensor were investigated. At VDS = ..5 V and VGS = ..5 V the drain current of the device was ..22.5 A and the threshold voltage was about ..1.4 V. A non-planar, non-rectangular vertical MOSFET with a trapezoidal gate was transformed into an equivalent rectangularly based one by using a Schwartz-Christoffel transformation. The LEVEL1 device parameters of the vertical MOSFET were extracted from the measured electrical device characteristics and were used in the SPICE simulation for the vertical MOSFET. The measured and the simulated results for the vertical PMOSFET showed relatively good agreement. When the vertical MOSFET was dipped into a thiol DNA solution, the drain current decreased due to charged biomolecules probably being adsorbed on the gate, which indicates that a vertical MOSFET in a Si micro- uidic channel might be useful for sensing charged biomolecules.