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Gwang-Il Noh,Ki-Young Kim,Seo-Ho Shin,Seo-Ho Shin,Hyun-Su Park,Bo-Kyeong Kim,Mun-Sik Shin,Jae-Kwon Ko 한국육종학회 2008 한국육종학회지 Vol.40 No.3
This study was carried out to get the genetic information on the germination rate and fat acidity after 12 weeks’storage at 35 . Germination rate decreased with longer storage period, ℃ while fat acidity increased. Germination rate was higher in the order of Koshihikari, Hanmaeum and Unkwangbyeo after 12 weeks’storage at 35℃. Fat acidity of Koshihikari and Hanmaeum was gradually increased, but that of Unkwangbyeo was dramatically increased after 4 weeks’storage at 35℃. The genetic mode on germination rate and fat acidity using the joint scaling test was shown to be additive-dominance gene effects. Additive([d]) effect was higher than dominance effect([h]) in all crosses. The average degree of dominance, [h]/[d], was less than 1, indicating that germination rate and fat acidity was partially dominant. Germination rate and fat acidity based on frequency distribution of 2 crosses were quantitative characters expressed by polygenes.
Gwang-Sik Kim,Seung-Hwan Kim,Jeong-Kyu Kim,Changhwan Shin,Jin-Hong Park,Saraswat, Krishna C.,Byung Jin Cho,Hyun-Yong Yu IEEE 2015 IEEE electron device letters Vol.36 No.8
<P>We demonstrate Fermi-level unpinning and contact resistance reduction by surface passivation using SF<SUB>6</SUB> plasma treatment of a metal/germanium (Ge) contact. A specific contact resistivity (Pc) of 1.14 × 10<SUP>-3</SUP> Ω · cm<SUP>2</SUP> and 0.31 eV of Schottky barrier height is achieved for a Ti/SF<SUB>6</SUB>-treated n-type Ge (n-Ge) (Nd = 1 × 10<SUP>17</SUP> cm<SUP>-3</SUP>) contact, exhibiting 1700 times Pc reduction from a Ti/nontreated n-Ge contact. A convenient and effective passivation process of the Ge surface is presented to alleviate Fermi-level pinning at metal/Ge contact and lower source/drain contact resistance of Ge n-type field-effect transistors.</P>
Shin, Ho-Jin,Chung, Joo Seop,Lee, Je-Jung,Sohn, Sang Kyun,Choi, Young Jin,Kim, Yeo-Kyeoung,Yang, Deok-Hwan,Kim, Hyeoung-Joon,Back, Jin Ho,Kim, Jong Gwang,Joo, Young Don,Lee, Won Sik,Sohn, Chang Hak,Le 부산대학교 병원 암연구소 2007 부산대병원학술지 Vol.- No.21
목적: 림프종이나 Ebstein Barr 바이러스와 연관된 혈구탐식증후군에서 CHOP 항암화학요법의 치료성적에 관한 보고는 현재까지 거의 보고된 바 없다. 이에 본 연구에서는 성인 혈구탐식증후군 환자에서 CHOP 항암화학요법 뿐만 아니라 etoposide와 corticosteroid 병합요법 그리고 prednisolone 단독 치료의 치료성적을 비교분석하고자 하였다. 대상과 방법: 16세 이상의 46명의 성인환자들이 혈구탐식증후군으로 진단되었다. 이들 중 CHOP 항암화학요법 치료를 시행받은 환자 18명, etoposide와 corticosteroid 병합요법 치료를 시행받았던 6명, 그리고 prednisolone 단독치료를 시 행받았던 6명의 환자들이 분석가능하였다. 결과: CHOP 항암화학요법 치료를 시행받은 환자 중 완전관해 27.8% (5/18), 부분관해 27.8% (5/18) 를 보였으며, 전체생존율은 55.6% 였다. Etoposide 와 corticosteroid 병합요법에서는 50% (3/6)에서 부분관해를 보였으나 완전관해는 한 명도 없었다. Prednisolone 단독치료로는 16.7% (1/6) 에서 완전관해와 부분관해를 보였다. 중앙추적기간은 132주 였으며, CHOP 항암화학요법치료를 시행받은 환자에서 중앙반응기간은 아직 도달하지 않았고, 3년 추정 반응기간은 68.57% 였다. Etoposide 와 corticosteroid 병합요법과 prednisolone 단독치료군에서 중앙 반응기간은 각각 3주와 1주였다. CHOP 항암화학요법 치료를 시행받은 환자군의 중앙생존기간 16주, 3년추정 생존율이 40.63%로 etoposide 와 corticosteroid 병합치료와 prednisolone 단독치료군에 비해 통계학적으로 유의하게 높았다(p = O.OO16). 결론: CHOP 항암화학요법은 성인 혈구탐식증후군 환자에서 유용할 수 있을 것으로 사료된다.
Shin, Doo-San,Heo, Gwang-Il,Son, Soo-Hyeong,Oh, Chang-Sik,Lee, Young-Kee,Cha, Jae-Soon The Korean Society of Plant Pathology 2018 Plant Pathology Journal Vol.34 No.3
Fast and accurate diagnosis is needed to eradicate and manage economically important and invasive diseases like fire blight. Loop-mediated isothermal amplification (LAMP) is known as the best on-site diagnostic, because it is fast, highly specific to a target, and less sensitive to inhibitors in samples. In this study, LAMP assay that gives more consistent results for on-site diagnosis of fire blight than the previous developed LAMP assays was developed. Primers for new LAMP assay (named as DS-LAMP) were designed from a histidine-tRNA ligase gene (EAMY_RS32025) of E. amylovora CFBP1430 genome. The DS-LAMP amplified DNA (positive detection) only from genomic DNA of E. amylovora strains, not from either E. pyrifoliae (causing black shoot blight) or from Pseudomonas syringae pv. syringae (causing shoot blight on apple trees). The detection limit of DS-LAMP was 10 cells per LAMP reaction, equivalent to $10^4$ cells per ml of the sample extract. DS-LAMP successfully diagnosed the pathogens on four fire-blight infected apple and pear orchards. In addition, it could distinguish black shoot blight from fire blight. The $B{\ddot{u}}hlmann$-LAMP, developed previously for on-site diagnosis of fire blight, did not give consistent results for specificity to E. amylovora and on-site diagnosis; it gave positive reactions to three strains of E. pyrifoliae and two strains of P. syringae pv. syringae. It also, gave positive reactions to some healthy sample extracts. DS-LAMP, developed in this study, would give more accurate on-site diagnosis of fire blight, especially in the Republic of Korea, where fire blight and black shoot blight coexist.
Shin, Changho,Kim, Jeong-Kyu,Kim, Gwang-Sik,Lee, Hyunjae,Shin, Changhwan,Kim, Jong-Kook,Cho, Byung Jin,Yu, Hyun-Yong IEEE 2016 IEEE transactions on electron devices Vol.63 No.11
<P>The impact of process-induced random dopant fluctuation (RDF)-induced threshold voltage (Vth) variation on the performance of 7-nm n-type germanium (Ge) FinFETs with and without a metal-interlayer-semiconductor (MIS) source/drain (S/D) structure is investigated using 3-D TCAD simulations. In order to reduce the RDF-induced Vth variation, an MIS S/D structure with a heavily doped n-type zinc oxide (ZnO) interlayer is used in the S/D region of the Ge FinFET. Thus, without performance degradation, the Ge FinFET with an MIS S/D structure achieves approximately threefold reduction in the RDF-induced Vth variation (versus without an MIS S/D structure). The impact of various fin parameters (i. e., fin height and fin width) on the RDF-induced Vth variation is also investigated. It is noteworthy that variation is suppressed as the fin height (fin width) increases (decreases).</P>
Gwang-Sik Kim,Gwangwe Yoo,Yujin Seo,Seung-Hwan Kim,Karam Cho,Byung Jin Cho,Changhwan Shin,Jin-Hong Park,Hyun-Yong Yu IEEE 2016 IEEE electron device letters Vol.37 No.6
<P>The effect of post-deposition H<SUB>2</SUB> annealing (PDHA) on the reduction of a contact resistance by the metal-interlayer-semiconductor (M-I-S) source/drain (S/D) structure of the germanium (Ge) n-channel field-effect transistor (FET) is demonstrated in this letter. The M-I-S structure reduces the contact resistance of the metal/n-type Ge (n-Ge) contact by alleviating the Fermi-level pinning (FLP). In addition, the PDHA induces interlayer doping and interface controlling effects that result in a reduction of the tunneling resistance and the series resistance regarding the interlayer and an alleviation of the FLP, respectively. A specific contact resistivity (p<SUB>c</SUB>) of 3.4×10<SUP>-4</SUP>Ω·cm<SUP>2</SUP> was achieved on a moderately doped n-Ge substrate (1×10<SUP>17</SUP> cm<SUP>-3</SUP>), whereby 5900× reduction was exhibited from the Ti/n-Ge structure, and a 10× reduction was achieved from the Ti/Ar plasma-treated TiO<SUB>2-x</SUB>/n-Ge structure. The PDHA technique is, therefore, presented as a promising S/D contact technique for the development of the Ge n-channel FET, as it can further lower the contact resistance of the M-I-S structure.</P>
Gwang-Sik Kim,Jeong-Kyu Kim,Seung-Hwan Kim,Jaesung Jo,Changhwan Shin,Jin-Hong Park,Saraswat, Krishna C.,Hyun-Yong Yu IEEE 2014 IEEE electron device letters Vol.35 No.11
<P>We demonstrate contact resistivity reduction by inserting an Ar plasma-treated TiO<SUB>2-x</SUB> heavily doped interfacial layer to metal/semiconductor contact to overcome a Fermi-level pinning problem on germanium (Ge). A specific contact resistivity of 3.16 × 10<SUP>-3</SUP>Ω · cm<SUP>2</SUP> on moderately doped n-type Ge substrate (6 × 10<SUP>16</SUP>cm<SUP>-3</SUP>) was achieved, exhibiting ×584 reduction from Ti/Ge structure, and ×11 reduction from Ti/undoped TiO<SUB>2</SUB>/Ge structure. A novel doping technique for TiO<SUB>2</SUB> interfacial layer at low temperature using Ar plasma was presented to lower S/D contact resistance in Ge n-MOSFET.</P>
화학공정 모델을 이용한 데이터 보정 및 gross error 의 감지
신동일,윤인섭,장광식,장태석,어수영 한국화학공학회 1999 Korean Chemical Engineering Research(HWAHAK KONGHA Vol.37 No.5
본 연구에서는 화학공정 측정값들에 대한 데이터 보정 및 gross error 감지를 위한 통합 시스템을 제안하였다. 제안된 시스템은 기본적인 단위 공정 모델 및 물성치 루틴을 갖추고 있어 하나의 독립된 시스템으로 사용이 가능하다. 제안된 데이터 보정 알고리듬은 비선형 방정식계로 표현되는 화학공정의 특성에 적합하도록 구현되었다. 이 방법은 선형 근사로 얻어진 제약식에 대해 반복적으로 계산을 수행하며, 방정식 중심법을 채택하여 계산의 효율성을 높이도록 구성되었다. 또한, gross error 감지를 위해 기존의 측정치 테스트를 개선한 교차점 테스트를 제안하고 사례 연구를 통해 이의 성능을 확인하였다. In this paper an integrated system for data reconciliation and gross error detection of the measurements in chemical processes is suggested. With unit process models and physical property routines, the proposed system itself works as an independent system. The proposed algorithm of data reconciliation is appropriate for the chemical processes that are consisted of the set of nonlinear equations. Since this method takes advantage of the repeated calculations of the constraint equations acquired by linear approximation, it improves the overall efficiency of the calculation. Also, the Point Test algorithm, which is better than the Measurement Test in co-linearity, for gross error detection is also suggested. The performance of the proposed system has been tested through a case study.
Treatment Outcomes with CHOP Chemotherapy in Adult Patients with Hemophagocytic Lymphohistiocytosis
Shin, Ho-Jin,Chung, Joo Seop,Lee, Je-Jung,Sohn, Sang Kyun,Choi, Young Jin,Kim, Yeo-Kyeoung,Yang, Deok-Hwan,Kim, Hyeoung-Joon,Kim, Jong Gwang,Joo, Young Don,Lee, Won Sik,Sohn, Chang-Hak,Lee, Eun Yup,Ch The Korean Academy of Medical Sciences 2008 JOURNAL OF KOREAN MEDICAL SCIENCE Vol.23 No.3
<P>The objective of the current study was to investigate the treatment outcomes for the use of cyclophosphamide, adriamycin, vincristine, and prednisolone (CHOP) chemotherapy in adult patients with hemophagocytic lymphohistiocytosis (HLH). Seventeen HLH patients older than 18 yr of age were treated with CHOP chemotherapy. A response evaluation was conducted for every two cycles of chemotherapy. With CHOP chemotherapy, complete response was achieved for 7/17 patients (41.2%), a partial response for 3/17 patients (17.6%), and the overall response rate was 58.8%. The median response duration (RD) was not reached and the 2-yr RD rate was 68.6%, with a median follow-up of 100 weeks. Median overall survival (OS) was 18 weeks (95% CI, 6-30 weeks) and the 2-yr OS rate was 43.9%. Reported grade 3 or 4 non-hematological toxicities were increased serum liver enzyme levels and stomatitis. Grade 3 or 4 hematological toxicities were leukopenia (50.8%), anemia (20%), and thrombocytopenia (33.9%). Neutropenic fever was observed in 21.6% of patients (14/65 cycles), and most of the cases were resolved with supportive care including treatment with broad-spectrum antibiotics. CHOP chemotherapy seems to be effective in adult HLH patients and the toxicities are manageable.</P>