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Son, S.W.,Park, J.H.,Baek, J.M.,Kim, J.S.,Kim, D.K.,Shin, S.H.,Banerjee, S.K.,Lee, J.H.,Kim, T.W.,Kim, D.H. Pergamon Press ; Elsevier Science Ltd 2016 Solid-State Electronics Vol.123 No.-
In this paper, we have fabricated and characterized In<SUB>0.7</SUB>Ga<SUB>0.3</SUB>As quantum-well (QW) metal-oxide-semiconductor field-effect-transistors (MOSFETs). We have employed the gate dielectric of the Al<SUB>2</SUB>O<SUB>3</SUB>/HfO<SUB>2</SUB> (0.6/2nm) bi-layer stack by ALD. The fabricated device with L<SUB>g</SUB>=4μm exhibits a record maximum transconductance (g<SUB>m_max</SUB>) in excess of 520μS/μm at >1μm region, and reasonably good electrostatic integrity, such as SS=110mV/decade and DIBL=43mV/V. Also, we have investigated the gate length scaling behavior in terms of output, transconductance, and transfer characteristics. In particular, our devices feature very uniform values of the electrostatic integrity, such as SS=100-110mV/decade, V<SUB>T</SUB>=-0.25V to -0.2V and DIBL=40-50mV/V, as L<SUB>g</SUB> decreases from 10μm to 4μm. Furthermore, we have explored the impact of source resistance (R<SUB>S</SUB>) onto the device characteristics of the InGaAs QW MOSFETs. In doing so, we have modeled both measured extrinsic transconductance (g<SUB>m_ext</SUB>) and intrinsic transconductance (g<SUB>m_int</SUB>) as a function of L<SUB>g</SUB>.
S. ROY,A. K. DAS,R. BANERJEE 한국자동차공학회 2016 International journal of automotive technology Vol.17 No.1
The present study attempts to address the challenges of the multiobjective optimization problem of the BSFCNOx- PM trade-off paradox of an existing diesel engine by harnessing the synergetic benefit of PM and BSFC reduction through CRDI operation and simultaneous NOx reduction by EGR application. Load, FIP and EGR were chosen as the input parameters while NOx, PM and BSFC were the response variables. In order to reduce the experimental effort, the Taguchi L16 orthogonal array technique was employed to obtain the corresponding values of the response variables. The grey relational analysis coupled with fuzzy logic has been employed as the optimization routine. The optimal combination of the input parameters corresponding to the calibrated values of the response variables were obtained by employing the Grey-Fuzzy Grade and S-N ratio strategy as a performance index. The computed optimal combination so obtained were further validated through actual experimentation. EGR was found to be the most influencing factor in the present optimization endeavour. The study also established that the Grey-Fuzzy-Taguchi method was not only comparable but superior to the Grey-Taguchi method usually employed for such optimization studies.
Single spin asymmetry A<sub>N</sub> in polarized proton-proton elastic scattering at s=200 GeV
STAR Collaboration,Adamczyk, L.,Agakishiev, G.,Aggarwal, M.M.,Ahammed, Z.,Alakhverdyants, A.V.,Alekseev, I.,Alford, J.,Anson, C.D.,Arkhipkin, D.,Aschenauer, E.,Averichev, G.S.,Balewski, J.,Banerjee, A North-Holland Pub. Co 2013 Physics letters: B Vol.719 No.1
We report a high precision measurement of the transverse single spin asymmetry A<SUB>N</SUB> at the center of mass energy s=200 GeV in elastic proton-proton scattering by the STAR experiment at RHIC. The A<SUB>N</SUB> was measured in the four-momentum transfer squared t range 0.003≤|t|≤0.035 (GeV/c)<SUP>2</SUP>, the region of a significant interference between the electromagnetic and hadronic scattering amplitudes. The measured values of A<SUB>N</SUB> and its t-dependence are consistent with a vanishing hadronic spin-flip amplitude, thus providing strong constraints on the ratio of the single spin-flip to the non-flip amplitudes. Since the hadronic amplitude is dominated by the Pomeron amplitude at this s, we conclude that this measurement addresses the question about the presence of a hadronic spin flip due to the Pomeron exchange in polarized proton-proton elastic scattering.
Banerjee, S.,Basak, S.,Adhikari, M.R. 충청수학회 2006 충청수학회지 Vol.19 No.4
The aim of this paper is to endow a monoid structure on the set S of all oriented knots(links) under the operation ${\biguplus}$, called addition of knots. Moreover, we prove that there exists a homomorphism of monoids between ($S_d,\;{\biguplus}$) to (N, +), where $S_d$ is a subset of S with an extra condition and N is the monoid of non negative integers under usual addition.
Phototrophic Bacteria as Fish Feed Supplement
Banerjee, S.,Azad, S.A.,Vikineswary, S.,Selvaraj, O.S.,Mukherjee, T.K. Asian Australasian Association of Animal Productio 2000 Animal Bioscience Vol.13 No.7
Single cell of an indigenous phototrophic bacterium, Rhodovulum sulfidophilum, was incorporated in commercial fish feed for Oreochromis niloticus. The bacterial cell was analyzed for nutritional value and tested for toxicity and acceptability as an aquaculture feed supplement. The results showed higher survival rate and significantly higher growth rate (p<0.001) in O. niloticus fed with the bacteria incorporated fish feed. It is suggested that R sulfidophilum can be utilized as an aquaculture feed supplement.
S. Banerjee,S. Basak,M. R. Adhikari 충청수학회 2006 충청수학회지 Vol.19 No.4
The aim of this paper is to endow a monoid structure on the set S of all oriented knots(links) under the operation , called addition of knots. Moreover, we prove that there exists a homomorphism of monoids between (S d , ) to (N, +), where S d is a subset of S with an extra condition and N is the monoid of non negative integers under usual addition.
Observation of <sup>B+</sup>→<sup>K+</sup>ηγ
Nishida, S.,Abe, K.,Aihara, H.,Akatsu, M.,Asano, Y.,Aulchenko, V.,Aushev, T.,Bahinipati, S.,Bakich, A.M.,Ban, Y.,Banerjee, S.,Bedny, I.,Bitenc, U.,Bizjak, I.,Blyth, S.,Bondar, A.,Bozek, A.,Brač,k Elsevier 2005 Physics letters: B Vol.610 No.1
<P><B>Abstract</B></P><P>We report measurements of radiative <I>B</I> decays with Kηγ final states, using a data sample of 253 <SUP>fb−1</SUP> recorded at the ϒ(4S) resonance with the Belle detector at the KEKB <SUP>e+</SUP><SUP>e−</SUP> storage ring. We observe <SUP>B+</SUP>→<SUP>K+</SUP>ηγ for the first time with a branching fraction of (8.4±1.5(stat)−0.9+1.2(syst))×<SUP>10−6</SUP> for <SUB>MKη</SUB><2.4 GeV/<SUP>c2</SUP>, and find evidence of <SUP>B0</SUP>→<SUP>K0</SUP>ηγ. We also search for B→K3∗(1780)γ.</P>
Band Structure Engineering of Layered WSe<sub>2</sub><i>via</i> One-Step Chemical Functionalization
Park, Jun Hong,Rai, Amritesh,Hwang, Jeongwoon,Zhang, Chenxi,Kwak, Iljo,Wolf, Steven F.,Vishwanath, Suresh,Liu, Xinyu,Dobrowolska, Malgorzata,Furdyna, Jacek,Xing, Huili Grace,Cho, Kyeongjae,Banerjee, S American Chemical Society 2019 ACS NANO Vol.13 No.7
<P>Chemical functionalization is demonstrated to enhance the p-type electrical performance of two-dimensional (2D) layered tungsten diselenide (WSe<SUB>2</SUB>) field-effect transistors (FETs) using a one-step dipping process in an aqueous solution of ammonium sulfide [(NH<SUB>4</SUB>)<SUB>2</SUB>S(aq)]. Molecularly resolved scanning tunneling microscopy and spectroscopy reveal that molecular adsorption on a monolayer WSe<SUB>2</SUB> surface induces a reduction of the electronic band gap from 2.1 to 1.1 eV and a Fermi level shift toward the WSe<SUB>2</SUB> valence band edge (VBE), consistent with an increase in the density of positive charge carriers. The mechanism of electronic transformation of WSe<SUB>2</SUB> by (NH<SUB>4</SUB>)<SUB>2</SUB>S(aq) chemical treatment is elucidated using density functional theory calculations which reveal that molecular “SH” adsorption on the WSe<SUB>2</SUB> surface introduces additional in-gap states near the VBE, thereby, inducing a Fermi level shift toward the VBE along with a reduction in the electronic band gap. As a result of the (NH<SUB>4</SUB>)<SUB>2</SUB>S(aq) chemical treatment, the p-branch ON-currents (<I>I</I><SUB>ON</SUB>) of back-gated few-layer ambipolar WSe<SUB>2</SUB> FETs are enhanced by about 2 orders of magnitude, and a ∼6× increase in the hole field-effect mobility is observed, the latter primarily resulting from the p-doping-induced narrowing of the Schottky barrier width leading to an enhanced hole injection at the WSe<SUB>2</SUB>/contact metal interface. This (NH<SUB>4</SUB>)<SUB>2</SUB>S(aq) chemical functionalization technique can serve as a model method to control the electronic band structure and enhance the performance of devices based on 2D layered transition-metal dichalcogenides.</P> [FIG OMISSION]</BR>
Effect of the oxidation process on the luminescence of HF-treated porous silicon
S.N.Sharma,R.Banerjee,A.K.Barua 한국물리학회 2003 Current Applied Physics Vol.3 No.2, 3
Porous silicon (PS) films were prepared by lateral anodization of crystalline silicon in HF based solutions at dierent currentdensities. The oxidation mechanism of the HF-treated PS films has been monitored by means of photoluminescence (PL) and. 10 s resulted in the increment ofpolysilane/hydride species on the surface of PS rather than any change in the dimensions of the silicon-crystallites. It has been foundthat HF-treated PS surfaces are relatively stable against oxidation as compared to untreated PS films. Upon oxidation of the HF-treated PS films, the PL intensity initially increases as a result of reduction in crystallite size to exhibit quantum size eects and thendecreases owing to loss of luminescing structures due to over-oxidation of the Si-columns. We infer that the surface passivationemission mechanisms are responsible to explain the luminescence properties of PS.. 2002 Elsevier Science B.V. All rights reserved.