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CaO첨가$(Ba, Pb)O-Nd_2O_3-TiO_2$ 세라믹스의 고주파 유전특성
윤상옥,최환,김경용,Yoon, Sang-Ok,Choi, Whan,Kim, Kyung-Yong 한국세라믹학회 1993 한국세라믹학회지 Vol.30 No.2
Effects of CaO on microwave dielectric properties of (Ba, Pb)O-Nd2O3-TiO2 ceramic ystem were investigated. As the content of CaO increases, the sintered bulk density decreases due to the decrease of sinterability. However, with increasing the sintering tmperature, the relative dielectric constants increases. This has been attributed on the formation of the 2nd phase inclusion, TiO2(rutile). The Q values increase due to the compensation effect of Ca ions up to 1 wt%, and then decrease due to the interfacial relaxation effects. The temperature coefficient of resonance frequency increases to a positive direction with increasing the amounts of CaO.
Dielectric Properties of ($Pb_{1-x}Ca_{x})ZrO_{3}$ Ceramics at Microwave Frequencies
이상윤,최환,김왕섭,김경용,Lee, Sang-Yoon,Choi, Whan,Kim, Wang-Sup,Kim, Kyung-Yong The Institute of Electronics and Information Engin 1992 전자공학회논문지-A Vol.29 No.10
A ($Pb_{1-x}Ca_{x})ZrO_{3}$ system which has a high dielectric constant, low dielectric loss and temperature coefficient was investigated. For sintering temperatures above 1350$^{\circ}C$ the microstructures of sintered bodies were unchanged regardless of the amount of CaO. The dielectric constant and dielectric loss decreased and the temperature coefficient varied from positive to negative with the increasing amount of CaO. For the CaO content of 0.37, i.e. ($Pb_{0.63}Ca_{0.37})ZrO_{3}$, the ceramic showed very good dielectric properties such as ${\varepsilon}_1$=100, Q > 1200 at 3GHz, and T$_f$=$\pm$3ppm/$^{\circ}C$.
BiNbO$_{4}$ 세라믹스를 이용한 LC 필터에 관한 연구
고상기,김경용,최환,박동철,Ko, Sang-Ki,Kim, Kyung-Yong,Choi, Whan,Park, Dong-Chul 대한전자공학회 1998 電子工學會論文誌, D Vol.d35 No.4
BiNbO$_{4}$ ceramics with 0.07wt% V$_{2}$O$_{5}$ and 0.03wt% CuO (BNC3V7) sintered at 900 .deg. C where it is possible for these to be co-fired with ag electronde. Dielectric constant of 44.3 TCF (Thermal Coefficient of resonance Frequency) of 2 ppm/.deg. C and Qxf value 22,000 GHz can be obtained from BNC3V7. the laminatedchip LC filter is indispensible to the minimaturization of PCS (Personal Communication System) terminals. Therefore, multilayer type BPF has been fabricated by screen-printing with silver electrode after tape casting. The simulated characteristics of the fabricated filters sintered at 900.deg. C werecomparedwith the designed ones. for Band Pass Filter widths was similar that ofdesigned ones. For Low Pass Filter (LPF), insertion loss value of band pass widths (2.4 dB) which is a few higher than that of designed (1dB), but characteristization of band pass widths was similar that of designed ones.s.of designed ones.s.
$BiNbO_4$세라믹스를 이용한 저역통과 필터에 관한 연구
고상기,김경용,김병호,최환,Ko, Sang-Ki,Kim, Kyung-Yong,Kim, Byong-Ho,Choi, Whan 한국전기전자재료학회 1998 전기전자재료학회논문지 Vol.11 No.4
$BiNbO_4$ ceramics doped with 0.07wt% $V_2O_5$ and 0.03wt% CuO (BNC3V7) were sucessfully sintered at $900^{\circ}C$ through the firing process with Ag electrode. The BNC3V7 shows typically Dielectric constant of 44.3, Thermal Coefficient of resonance Frequency(TCF) of 2 ppm/$^{\circ} and $Qxf_o$ value of 22,000 GHz. The laminated chip Low Pass Filter (LPF) is very sensitive to chip processing parameters, was confirmed by the computer simulation as a function of Q(Quality factors), filter size, capacitor layer thickness, inductor pattern widths. The multilayer type LPF was fabricated by screen-printing with Ag electrode after tape casting and then compared with the simulated characteristics. The results show that characterization of band pass width was similar to that of designed ones.