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Ta / NiFe / Cu / Co Pseudo 스핀밸브 구조의 자기저항 효과
주호완(Ho-wan Joo),최진협(Jin-hyup Choi),최상대(Sang-Dae Choi),이기암(Ky-Am Lee) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.1
The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers (Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 ㎚)/NiFe(7.5 ㎚)/Cu(3 ㎚)/Co(5 ㎚) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.
[Pd / Co]N / FeMn 다층막에서의 교환바이어스 수직자기이방성과 열적안정성
주호완(Ho-Wan Joo),안진희(Jin-Hee An),김보근(Bo-Keun Kim),김선욱(Sun-Wook Kim),이기암(Kee-Am Lee),황도근(Do-Geun Hwang),이상석(Sang-Suk Lee) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.4
Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in [Pd/Co]_N/FeMn multilayer deposited by dc magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21 ㎚, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15 ㎚. As the annealing temperature increases to 240℃, the Hex increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 330℃.
[Pd / Co]5 / FeMn 막에서의 바닥층과 삽입층에 의한 교환바이어스수직자기이방성
주호완(Ho Wan Joo),안진희(Jin Hee An),이미선(Mi Sun Lee),김보근(Bo Keun Kim),최상대(Sang Dea Choi),이기암(Kee Am Lee) 한국자기학회 2004 韓國磁氣學會誌 Vol.14 No.5
Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn(15 ㎚) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 200℃ in about 50℃ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the Hex obtained the largest 127 Oe. And if Pd was a buffer layer, Hex obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.
안명천,최상대,주호완,김기왕,황도근,이장로,이상석,Ahn, M.C.,Choi, S.D.,Joo, H.W.,Kim, G.W.,Hwang, D.G.,Rhee, J.R.,Lee, S.S. 한국자기학회 2007 韓國磁氣學會誌 Vol.17 No.4
어레이(away) 자성센서 개발을 위해 고진공 스퍼터링 증착장비를 이용하여 스펙큘러형(specular type) Glass/Ta(5)/NiFe(7)/IrMn(10)/NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) 거대자기저항-스핀밸브(giant magnetoresistive-spin valves; CMR-SV)박막을 제작하였다. 다층박막 시료를 $20{\times}80{\mu}m^2$의 미세 활성영역을 가진 15개 어레이를 $8{\times}8mm^2$ 영역 내에 최적화한 제작 조건으로 광 리소그래피 패터닝 하였다. Cu를 증착하여 만든 2단자 전극법으로 측정한 자성특성은 15개 모든 소자들이 균일한 자기저항특성을 나타내었고, 5 Oe 근방에서 가장 민감한 자기저항비 자장민감도와 출력전압들은 각각 0.5%/Oe, ${\triangle}$V: 3.9 mV이었다. 형상자기이방성이 적용된 상부 자유층 $CoFe/O_2/NiFe$층은 하부 고정 자성층 $IrMn/NiFe/O_2/CoFe$층 자화 용이축과 직교하였다. 측정시 인가전류 값을 각각 1 mA에서 10 mA까지 인가하였을 때 출력 작동 전압 값은 균일하게 증가하였으며, 자장감응도도 거의 일정하여 미세 외부자장에 민감한 나노자성소자로서 좋은 특성을 띠었다. To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.