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[Pd / Co]5 / FeMn 막에서의 바닥층과 삽입층에 의한 교환바이어스수직자기이방성
주호완(Ho Wan Joo),안진희(Jin Hee An),이미선(Mi Sun Lee),김보근(Bo Keun Kim),최상대(Sang Dea Choi),이기암(Kee Am Lee) 한국자기학회 2004 한국자기학회지 Vol.14 No.5
Magnetic properties by exchange biased perpendicular magnetic anisotropy in [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn(15 ㎚) multilayers deposited by dc magnetron sputtering system are investigated. As inserted Pd layer of interface between [Pd/Co] multilayer and FeMn film, the Hex of perpendicular anisotropy was improved from 127 Oe to 145 Oe. But result of an experiment by thermal stability, the Hex of the case that an inserted layer was inserted in decreased from low 200℃ in about 50℃ more if not inserted. If Ta was a buffer layer, the experiment results along material of buffer layer, the Hex obtained the largest 127 Oe. And if Pd was a buffer layer, Hex obtained the largest 169 Oe. Also, the Hc in buffer layer of Ta and Pd obtained the largest 203 Oe and 453 Oe, respectively.
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Ta / NiFe / Cu / Co Pseudo 스핀밸브 구조의 자기저항 효과
주호완(Ho-wan Joo),최진협(Jin-hyup Choi),최상대(Sang-Dae Choi),이기암(Ky-Am Lee) 한국자기학회 2004 한국자기학회지 Vol.14 No.1
The dependence of sensitivity, MR ratio, coercivity (Hc) and switching fields as a function of thickness of each magnetic layers (Co, NiFe and Cu) were investigated in pseudo spin valves with a structure of Ta/NiFe/Cu/Co. As measured results dependence of the thickness of each magnetic layer, we obtained MR ratio of 7.26% for Ta(4 ㎚)/NiFe(7.5 ㎚)/Cu(3 ㎚)/Co(5 ㎚) pseudo spin valves. Also, we could control properties of magnetoresistance for independent magnetization courses of each magnetic layer. Especially, we found that we could control coercivity as constant MR ratio dependence of Co thickness.
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[Pd / Co]N / FeMn 다층막에서의 교환바이어스 수직자기이방성과 열적안정성
주호완(Ho-Wan Joo),안진희(Jin-Hee An),김보근(Bo-Keun Kim),김선욱(Sun-Wook Kim),이기암(Kee-Am Lee),황도근(Do-Geun Hwang),이상석(Sang-Suk Lee) 한국자기학회 2004 한국자기학회지 Vol.14 No.4
Magnetic properties and thermal stability by exchange biased perpendicular magnetic anisotropy in [Pd/Co]_N/FeMn multilayer deposited by dc magnetron sputtering system are investigated. We measured the perpendicular magnetization curves of [Pd(0.8 ㎚)/Co(0.8 ㎚)]_5/FeMn multilayer as function of FeMn thickness and annealing temperature. As FeMn thickness increases from 0 to 21 ㎚, the perpendicular exchange bias(Hex) obtained 127 Oe at FeMn thickness 15 ㎚. As the annealing temperature increases to 240℃, the Hex increased from 115 Oe to 190 Oe and disappeared exchange biased perpendicular magnetic anisotropy effect at 330℃.
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안명천,최상대,주호완,김기왕,황도근,이장로,이상석,Ahn, M.C.,Choi, S.D.,Joo, H.W.,Kim, G.W.,Hwang, D.G.,Rhee, J.R.,Lee, S.S. 한국자기학회 2007 한국자기학회지 Vol.17 No.4
To develop array magnetic sensors, specular-type giant magnetoresistive- spin valve (GMR-SV) film of Glass/Ta(5)MiFe(7)/IrMn(10)NiFe(5)/$O_2$/CoFe(5)/Cu(2.6)/CoFe(5)/$O_2$/NiFe(7)/Ta(5)(nm) was deposited by using a high-vacuum sputtering system. One of 15 way sensors in the area of $8{\times}8mm^2$ was Patterned a size of $20{\times}80{\mu}m^2$ in multilayer sample by Photo-lithography. All of 15 sensors with Cu electrodes were measured a uniform magnetic properties by 2-probe method. The highest magnetic sensitivity of MR and output voltage measured nearby an external magnetic field of 5 Oe were MS = 0.5%/Oe and ${\triangle}$V= 3.0 mV, respectively. An easy-axis of top-free layers of $CoFe/O_2/NiFe$ with shape anisotropy was perpendicular to one of bottom-pinned layers $IrMn/NiFe/O_2/CoFe$. When the sensing current increased from 1 mA to 10 mA, the output working voltage uniformly increased and the magnetic sensitivity was almost stable to use the nano-magnetic devices with good sensitive properties.
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이상석,박상현,소광섭,주호완,김기왕,황도근,Lee, Sang-Suk,Park, Sang-Hyun,Soh, Kwang-Sup,Joo, Ho-Wan,Kim, Gi-Wang,Hwang, D.G. 한국자기학회 2007 한국자기학회지 Vol.17 No.4
In order to detect of the magnetic property in the cell unit, we studied the GMR-SV (giant magnetoresistance-spin valves) biosensor, which was depended on the micro patterned features according to two easy directions of longitudinal and transversal axes. Here, the multi layer structure was glass/NiO/NiFe/CoFe/Cu/CoFe/NiFe. The uniaxial anisotropy direction was applied to the patterned biosensor during the deposition and vacuum post-annealing at $200^{\circ}C$ under the magnitude of 300 Oe, respectively. Considering the magnetic shape anisotropy effect, the size of micro patterned biosensor was a $2{\times}5{\mu}m^2$ after the photo lithography process. By our experimental results, we confirmed that the best condition of GMR-SV biosensor should be the same direction of the axis sensing current and the easy axis of pinned NiO/NiFe/CoFe triple layer oriented to the width direction of device, and the direction of the easy axis of free CoFe/NiFe bilayer was according to the longitudinal direction of device.
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