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Enhancement of Electrical Conductivity for Ag Grid using Electrical Sintering Method
황준영(Hwang, Jun Y.),문윤재(Moon, Y.J.),이상호(Lee, S.H.),강경태(Kang, K.),강희석(Kang, H.),조영준(Cho, Y.J.),문승재(Moon, S.J.) 한국신재생에너지학회 2011 한국신재생에너지학회 학술대회논문집 Vol.2011 No.05
Electrical sintering of the front electrode for crystalline silicon solar cells was performed applying a constant DC current to the printed lines. Conducting lines were printed on glass substrate by a drop-on-demand (DOD) inkjet printer and silver nanoparticle ink. Specific resistance and microstructure of sintered silver lines and were measured with varying DC current. To find the relation between temperature increase with changing applied current and specific resistance, temperature elevation was also calculated. Sintering process finished within a few milliseconds. Increasing applied DC current, specific resistance decreased and grain size increased after sintering. Achieved minimum specific resistance is approximately 1.7 times higher than specific resistance of the bulk silver.
심형섭(H. Y. Shim),강희석(H. S. Kang),정훈(H. Jeong),조영준(Y. J. Cho),김완수(W. S. Kim),강신일(S. Kang) 한국정밀공학회 2005 한국정밀공학회 학술발표대회 논문집 Vol.2005 No.10월
Bare-chip packaging becomes more popular along with the miniaturization of IT components. In this paper, we have studied flip-chip process, and developed automated bonding system. Among the several bonding method, NCP bonding is chosen and batch-type equipment is manufactured. The dual optics and vision system aligns the chip with the substrate. The bonding head equipped with temperature and force controllers bonds the chip. The system can be easily modified for other bonding methods such as ACF. In bonding process, the bonding force and temperature are known as the most dominant bonding parameters. A parametric study is performed for these two parameters. For the test sample, we used standard flipchip test kit which consists of FR4 boards and dummy flip-chips. The bonding test was performed for two types of flipchips with different chip size and lead pitch. The bonding temperatures are chosen between 25℃ to 300℃. The bonding forces are chosen between 5N and 300N. The bonding strength is checked using bonding force tester. After the bonding force test, the samples are examined by microscope to determine the failure mode. The relations between the bonding strength and the bonding parameters are analyzed and compared with bonding models. Finally, the most suitable bonding condition is suggested in terms of temperature and force.