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Si 기판위에 열증착법으로 제조한 copper phthalocyanine ( CuPc ) 박막의 구조 및 광전특성
정중현 ( Jung Hyun Jeong ),이종규 ( Jong Kyu Lee ),이혜연 ( Hea Yeon Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.5
The crystallized CuPc(copper phthalocyanine) film on a p-type $lt;100$gt; Si substrate is prepared at the substrate temperature of 300 L by thermal evaporation. X-ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the GuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). the CuPc/Si film shows the photovoltaic characteristics with a short-circuit photocurrent (J_(50)) of 4.29 mA/㎠ and an open-circuit voltage (V_(00)) of 12 mA.
소형 전기에너지저장장치 운전조건에 따른 방사 및 전도 방해에 관한 연구
정중일(Jeong-Il Jung),안건현(Gun-Hyun Ahn),김용성(Young-Sung Kim) 대한전기학회 2015 전기학회논문지 P Vol.64 No.1
When using a secondary battery in energy storage units, if the grid is in light duty the active power is stored so it can be used when the grid is in heavy duty. This makes possible for the load equalize and make the grid optimized. Recently the government is trying to propagate this technology. Depending on its capacity this kind of electric energy storage unit is used in adjusting the frequency, break up the energy peak in summer and winter, stabilize the energy output of renewable energy which can change unstably because of the environment. Which makes it possible to stabilize the grid. It is anticipated that market of 120 trillion won will be developed worldwide in 2030. Currently in Korea a steady supply is in progress. However because of stray electromagnetic waves some other electronics are malfunctioning. This paper covers the research in the method to detect the emission noise in small electric energy storage units using lithium secondary batteries and battery management system, Power conditioning systems with CIPSR standards. And the research of a more efficient method to measure such stray electromagnetic waves.
LiF ( Mg , Cu , Na , Si ) 형광체의 열자극엑소전자 방출
도시홍,정중현,청본정의 (靑本正義),서천사웅 (西川嗣雄),옥천양일 (玉川洋一),기부광효 (磯部光孝) ( Sih Hong Doh,Jung Hyun Jeong,M . Aoki,T . Nishikawa,Y . Tamagawa,M . Isobe ) 한국센서학회 1994 센서학회지 Vol.3 No.2
The TSEE characteristics of LiF(Mg,Cu,Na,Si)phosphor for gamma and beta rays are described. The TSEE glow curve of this phosphor showed 5 peaks in the range from 20 ℃ to 400 ℃; and its main peak appeared at 240℃. The sensitivity of the phospor for ^(60)Co gamma rays was about 450counts/mR. TSEE energy dependence for various beta radiation was nearly constant (±10%) in the mean beta particle energy range from 0.02MeV to 0.8MeV. The efficiency of TSEE of the phosphor for beta radiation was (2∼15)x10^(-3).
김종일,정중현,도시홍,황해선,김성철,김중환 ( Jong Il Kim,Jung Hyun Jeong,Sih Hong Doh,Hae Sun Hwang,Sung Chuel Kim,Jung Hwan Kim ) 한국센서학회 1997 센서학회지 Vol.6 No.1
Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of Eu^(3+) ion is to play a key role to enhance the radiation resistance in BGO crystal. The ^5D_0 emission of Eu^(3+) ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of ^5D_0 was negligible by comparing to that of BGO.
후열처리 온도에 따른 ZnGa<sub>2</sub>O<sub>4</sub> 형광체 박막의 발광 특성
이성수,정중현,Yi, Soung-Soo,Jeong, Jung-Hyun 한국센서학회 2002 센서학회지 Vol.11 No.1
$ZnGa_2O_4$박막 형광체는 기판 온도 $550^{\circ}C$, 산소 분압 100mTorr에서 Si(100) 기판 위에 펄스레이저 증착법을 이용하여 증착시켰고, 이렇게 증착되어진 박막을 $600^{\circ}C$와 $700^{\circ}C$에서 후 열처리하여 발광 특성을 조사하였다. X-선 회절 실험 결과, 후열처리 온도를 증가시킴에 따라서 $Ga_2O_3$ 상이 나타남을 확인할 수 있었다. 발광 스펙트럼은 460nm에서 최고 피크값을 나타내었으며. 350에서 600nm까지 갖는 넓은 밴드의 발광 특성을 나타내었다. 후열처리에 따른 $ZnGa_2O_4$ 박막은 다른 형태의 발광 강도와 grain 크기를 나타내었다. $ZnGa_2O_4$ thin film phosphors have been deposited using a pulsed laser deposition method on Si(100) substrates at a substrate temperature of $550^{\circ}C$ with oxygen pressures of 100mTorr, and subsequently to investigate their photoluminescence characteristics after post-annealed at $600^{\circ}C$ and $700^{\circ}C$. As a result for X-ray diffraction, $Ga_2O_3$ shape appeared with increasing annealing temperature. The luminescent spectra show a broad band extending from 350 to 600nm peaking at 460nm. A post-annealing treatment of $ZnGa_2O_4$ thin films led to the different shape of luminescent intensity and grain size.
박종만,이혜연,정중현 ( Jong Man Park,Hea Yeon Lee,Jung Hyun Jeong ) 한국센서학회 1998 센서학회지 Vol.7 No.5
We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of NbS₂ thin film was performed in the vacuum chamber by PLD method. Al₂O₃(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline NbS₂ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to 600 ℃. From the result of X-ray diffraction studies of the prepared NbS₂ thin films, it was reported that the NbS₂ thin film showed a good crystallinity at substrate temperature 600 ℃ and with S/Nb composition ratio 4.0 on Al₂O₃(012) but did not on Si(111). The films exhibited c-axis orientation.
구형 BGO 섬광 검출기에 대한 감마선 에너지 스텍트럼 계산
도시홍,김종일,박흥기,추민절,정중현,김기동,이대원 ( Sih Hong Doh,Hung Ki Park,Jong Il Kim,Min Cheal Chu,Jung Hyun Jeong,Gi Dong Kim,Dae Won Lee ) 한국센서학회 1995 센서학회지 Vol.4 No.4
The γ-ray deposition spectra were calculated by Monte Calro method to obtain the scintillation characteristics of the γ-ray for BGO scintillation detector with the spherical shape of 1.25 cm radius. The code used in calculating the γ-ray deposition spectra was made for personal computer with qbasic language. Also the γ-ray energy spectra of ^(22)Na, ^(137)Cs and ^(207)Bi were measured with the detector. The energy dependent resolution below 2000 keV for the detector was determined by estimating the standard deviation of the photopeak fitted with gaussian function, and x² fitting using Nardi`s empirical formula. The measured spectra of ^(22)Na and ^(137)Cs were compared with the broadened spectra which were obtained by broadening the calculated γ-ray deposition spectra with the energy dependent resolution. The absolute efficiency and the intrinsic peak efficiency of the detector were obtained by calculating the γ-ray deposition spectrum with the code.
이혜연,강영수,박종만,이종규,정중현 ( Hea Yeon Lee,Young Soo Kang,Jong Man Park,Jong Kyu Lee,Jung Hyun Jeong ) 한국센서학회 1998 센서학회지 Vol.7 No.1
The crystallized CuPc and PbTe films are formed by thermal evaporation and plused ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exhibits a strong photovoltaic characteristics with short circuit current(J_(sc)) of 25.46 mA/㎠ and open-circuit voltage(V_(oc)) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and 3.46 x 10^(-2), respectively. Based on the results of QE and η, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.
불순물 첨가 BGO 섬광체 단결정의 육성과 열형광 특성
김성철,김중환,김종일,정중현,도시홍,김기동,이대원 ( Sung chuel kim,Jung Hwan kim,Jong Il Kim,Jung Hyun Jeong,Sih hong Doh,Gi Dong Kim,Dae Won Lee ) 한국센서학회 1995 센서학회지 Vol.4 No.3
Eu or Fe doped BGO scintillation crystals were grown by Czochralski method. In order to get information about traps in the grown BGO crystals, we measured trap parameters including activation energy, frequency factor and the kinetic. order of thermoluminescence, and compared such parameters with thermoluminescent characteristics of pure BGO scintillation crystals. In addition, optical transmittance of the grown BGO crystals was measured.