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Si 기판위에 열증착법으로 제조한 copper phthalocyanine ( CuPc ) 박막의 구조 및 광전특성
정중현 ( Jung Hyun Jeong ),이종규 ( Jong Kyu Lee ),이혜연 ( Hea Yeon Lee ) 한국센서학회 1997 센서학회지 Vol.6 No.5
The crystallized CuPc(copper phthalocyanine) film on a p-type $lt;100$gt; Si substrate is prepared at the substrate temperature of 300 L by thermal evaporation. X-ray diffraction analysis showed the CuPc film to have a-axis oriented structure. For the measurement of photovoltaic characteristics of the CuPc/Si film and the Si substrate, a transverse current-voltage (I-V) curve is observed. In the dark, the Au/Si junction is shown to be ohmic contact. However, under illumination, a photovoltaic effect is not observed. The I-V curve in the dark indicates that the CuPc film on Si may form an ohmic contact. Since the CuPc film is a p-type semiconductor, the CuPc/p-Si junction has no barrier at the interface. Under illumination, the CuPc/Si junction shows a large photocurrent comparing with that of the wafer. The result indicates that the GuPc layer plays an important role in the photocarrier generation under red illumination (600 nm). the CuPc/Si film shows the photovoltaic characteristics with a short-circuit photocurrent (J_(50)) of 4.29 mA/㎠ and an open-circuit voltage (V_(00)) of 12 mA.
이혜연(Hea Yeon Lee),최병춘(Byung Chun Choi),정중현(Jung Hyun Jeong) 한국센서학회 1999 센서학회지 Vol.8 No.2
PbTe thin films of high quality were deposited on HF-treated Si(100) substrates at various substrate temperature by pulsed laser deposition technique. XRD patterns showed that PbTe layers were well-crystallized to a cubic phase with (h00) preferred orientation with tine substrate temperature up to 300℃. PbTe films could not form at substrate temperature above 400℃ because of reevaporation of the Pb. According to AFM image, the surface of films was composed of small granular crystals and flat matrix. According to the increase of substrate temperature, the grain size at film surface becomes larger. By Hall-effect measurement, the carrier concentration and Hall mobility of n-type PbTe films grown by T_(sub)=300 ℃ were 3.68 x l0^(18)cm^(-3) and 148 ㎠/Vs, respectively.
박종만,이혜연,정중현 ( Jong Man Park,Hea Yeon Lee,Jung Hyun Jeong ) 한국센서학회 1998 센서학회지 Vol.7 No.5
We developed a pulsed laser deposition(PLD) apparatus for depositing various thin films. In this study, the formation of NbS₂ thin film was performed in the vacuum chamber by PLD method. Al₂O₃(012) and Si(111) were used as the substrates. In order to investigate the growth conditions of a high crystalline NbS₂ thin film, the S/Nb composition ratio was varied from 2.0 to 5.25 and the substrate temperature was varied from the room temperature to 600 ℃. From the result of X-ray diffraction studies of the prepared NbS₂ thin films, it was reported that the NbS₂ thin film showed a good crystallinity at substrate temperature 600 ℃ and with S/Nb composition ratio 4.0 on Al₂O₃(012) but did not on Si(111). The films exhibited c-axis orientation.
이혜연,강영수,박종만,이종규,정중현 ( Hea Yeon Lee,Young Soo Kang,Jong Man Park,Jong Kyu Lee,Jung Hyun Jeong ) 한국센서학회 1998 센서학회지 Vol.7 No.1
The crystallized CuPc and PbTe films are formed by thermal evaporation and plused ArF excimer laser ablation. Structural and electrical properties of thin film is observed by XRD and current-voltage(I-V) curves. From XRD analysis, both PbTe and CuPc thin films show a-axis oriented structure. For the measurement of photovoltaic effect, the transverse current-voltage curve of CuPc/Si, PbTe/Si and PbTe/CuPc/Si junctions have been analyzed in the dark and under illumination. The PbTe/CuPc/Si junction exhibits a strong photovoltaic characteristics with short circuit current(J_(sc)) of 25.46 mA/㎠ and open-circuit voltage(V_(oc)) of 170 mV. Quantum efficiency and power conversion efficiency are calculated to be 15.4% and 3.46 x 10^(-2), respectively. Based on the results of QE and η, the photocurrent process of PbTe/CuPc/Si junction can be explained as following three effective steps; photocarrier generation in the CuPc layer, carrier separation at PbTe/CuPc interface, and finally a transportation of electrons through the PbTe layer.
PLD 법으로 제작한 PbSe 박막의 결정구조와 전기적 특성
박종만,정중현,이혜연 한국센서학회 1999 센서학회지 Vol.8 No.6
PbSe thin films were grown using PLD method on the p-Si(100) substrate. To determine what crystalline structure of PbSe thin films have according to the growth temperature, the films were prepared under a substrate temperature changing between a room temperature and 400 C. As a result of analyzing XRD patterns of PbSe thin films prepared at various substrate temperatures and FWHM of PbSe(200) rocking curve, it was found that PbSe thin film obtained at the growth temperature of 200 ℃ was best crystallized. In addition, the surface morphology of PbSe thin film observed using AFM found itself having the most regularly arranged particles in case of growing the film at 200℃. The measurement of Hall effect indicated that PbSe thin films were n-type semiconductors and that current-voltage characteristic curve exhibit the typical p-n junction phenomenon. In addition, electric conductivity of PbSe thin films was found somewhat higher than that of general semiconductors.