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Bi를 첨가한 백색 LED용 ZnS:Mn 황색형광체의 발광특성
정종훈,유일,Jung, Jong-Hun,Yu, Il 한국재료학회 2011 한국재료학회지 Vol.21 No.1
Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.
나노 Indium을 부착한 ZnO:In 가스센서의 제작 및 특성
정종훈,유윤식,유일,Jung, Jong-Hun,Yu, Yun-Sik,Yu, Il 한국재료학회 2011 한국재료학회지 Vol.21 No.9
Nano-indium-coated ZnO:In thick films were prepared by a hydrothermal method. ZnO:In gas sensors were fabricated by a screen printing method on alumina substrates. The gas sensing properties of the gas sensors were investigated for hydrocarbon gas. The effects of the indium concentration of the ZnO:In gas sensors on the structural and morphological properties were investigated by X-ray diffraction and scanning electron microscopy. XRD patterns revealed that the ZnO:In with wurtzite structure was grown with (1 0 0), (0 0 2), and (1 0 1) peaks. The quantity of In coating on the ZnO surface increased with increasing In concentration. The sensitivity of the ZnO:In sensors was measured for 5 ppm $CH_4$ gas and $CH_3CH_2CH_3$ gas at room temperature by comparing the resistance in air with that in target gases. The highest sensitivity to $CH_4$ gas and $CH_3CH_2CH_3$ gas of the ZnO:In sensors was observed at the In 6 wt%. The response and recovery times of the 6 wt% indiumcoated ZnO:In gas sensors were 19 s and 12 s, respectively.
Temperature and magnetic field dependent optical properties of superconducting $MgB_2$ thin film
정종훈,이해자,김경완,김명훈,노태원,강원남,정창욱,이성익,Jung, J. H.,Lee, H. J.,Kim, K. W.,Kim, M. W.,Noh, T. W.,Wang, Y. J.,Kang, W. N.,Jung, C. U.,Lee, Sung-Ik 한국초전도학회 2001 Progress in superconductivity Vol.3 No.1
We investigated the temperature and magnetic field dependent optical properties of a$ MgB_2$ thin film in the far-infrared region. In the superconducting state, i.e. 5 K, we obtained the values of superconducting gap $2\Delta$ ~ 5.2 meV and $2\Delta$ $_{k}$ $B/T_{c}$ ~1.8. Although the value of$ 2\Delta$</TEX$B/T_{c}$ was nearly half of the BCS value, the $2\Delta$ seemed to follow the temperature dependence of the BCS formula. Under the magnetic field (H), the superconducting state became suppressed. Interestingly, we found that the normal state area fraction abruptly increased at low field but slowly increased at high field. It did not follow the H-dependences predicted for a s-wave superconductor (i.e. a linear dependence) nor for a s-wave one (i.e. $H^{1}$2/ dependence). We discussed the complex gap nature of $MgB_2$ in comparison with two gap and anisotropic s-wave scenarios.ios.
정종훈 ( Jong Hoon Jung ),박두순 ( Doo-soon Park ) 한국정보처리학회 2013 한국정보처리학회 학술대회논문집 Vol.20 No.2
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