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Characterization and Fabrication of Microcrystalline Si Thin Films Prepared by FA-CVD
정창영,정관수,장진,Cheong, Chang-Young,Chung, Kwan-Soo,Jang, Jin The Institute of Electronics and Information Engin 1990 전자공학회논문지 Vol.27 No.9
We studied the electrical, optical and structural properties of microcrystalline silicon thin films prepared by a new chemical vapour deposition technique, called filament assisted(FA)-CVD. The microcrystalline silicon is sucessfully deposited when the hydrogen dilution ratio exceeds 30. The Raman peak at 520 cm-1 and the X-ray diffraction peak at 27.7\ulcorner0.2\ulcornerbecome sharper with increasing hydrogen dilution ratio. We obtain high quality microcrystalline Si by FA-CVD with optical gap of \ulcorner2.2eV and hydrogen content of \ulcorner3 at %.
적외선 CVD 방법을 이용한 산화막 성장에 $NH_3$가 미치는 영향
이철승,정관수,김철주,Lee, Chul-Seung,Chung, Kwan-Soo,Kim, Chul-Ju 대한전자공학회 1988 전자공학회논문지 Vol. No.
$NH_3-O_2$의 열반응에 의해 산화막을 성장시키는 새로운 방법을 소개하고, 기존의 건식산화방법을 이용한 $SiO_2$박막의 특성을 비교 설명하였다. $NH_3$의 유량에 따라서 박막의 성장비가 증가하고, 성장된 막의 구성성분이 건식산화때와 같음을 확인하였다. C-V특성곡선에서도 $Q_{OX}$와 $Q_{SS}$가 거의같았고 히스테리시스현상도 없었다. 또한 n-MOS트랜지스터를 제작하고 측정한 결과 $I_D$-$V_{DS}$특성곡선이 건식산화와 비교하여 우수함을 확인했다. A new method was developed for growing oxidation film by thermal reaction of $NH_3$ and $O_2$. The growth rate increased with the increase of partial pressure of $NH_3$. Optical transparency of the growth film was 12% at the wave number 1100 $cm^{-1}$ compared with 17% by thermal dry oxidation method, and the quality was much better. In C-V characteristic curve, $Q_{OX}$ was almost equal to $Q_{SS}$ and no hysteresis phenomena was observed. n-MOS transistors fabricated with this new method showed $I_D$-$V_{DS}$ characteristics better than thermal dry oxidation method.
Characteristics of Self assembled Monolayer as $Ta_2O_5$ Dielectric Interface for Polymer TFTs
최광남,곽성관,정관수,김동식,Choi, Kwang-Nam,Kwak, Sung-Kwan,Chung, Kwan-Soo,Kim, Dong-Sik The Institute of Electronics and Information Engin 2006 電子工學會論文誌. Journal of the institute of electronics Vol.43 No.1
중합 박막 트랜지스터의 특성은 유기 반도체에 앞서 게이트유전체 표면의 화학적 변형에 의해 조절 가능하다. 화학적 처리는 자기조립 단분자막 형태의 유전물질과 함께 파생된 tantalum pentoxide($Ta_2O_5$) 표면으로 구성된다. Octadecyl trichlorosilane(OTS), hexamethyldisilazane (HMDS), aminopropyltreithoxysilane(ATS) 자기조립 단분자막의 성장은 중합체로 결합된 poly-3-hexylthiophene(P3HT)의 분위기에서 $0.01\sim0.06cm2/V{\cdot}s$의 이동도로 진행되었다. 이동도 향상 메커니즘은 중합체와 자기조립 단분자막 사이의 분자 상호작용에 영향을 미치는 것으로 확인하였다. 이는 향후 ploymer TFT의 유전박막 중 하나로서 유용하게 사용 될 것이다. The characteristics of polymeric thin-film transistors(TFTs) can be controlled by chemically modifying the surface of the gate dielectric prior to the organic semiconductor. The chemical treatment consists of derivative the tantalum pentoxide($Ta_2O_5$) surface with organic materials to form self-assembled monolayer(SAM). The deposition of an octadecyl-trichlorosilane(OTS), hexamethy-ldisilazone(HMDS), aminopropyltreithoxysilane(ATS) SAM leads to a mobility of $0.01\sim0.06cm2/V{\cdot}s$ in a poly-3-hexylthiophene(P3HT) conjugated polymer. The mobility enhancement mechanism is likely to involve molecular interactions between the polymer and SAM. These result can be used for polymer TFT's dielectric material.
곽성관(Sung Kwan Kwak),최광남(Kwang Nam Choi),이진민(Jin Min Lee),강창수(Chang Soo Kang),김동진(Dong Jin Kim),정관수(Kwan Soo Chung) 대한전자공학회 2006 대한전자공학회 학술대회 Vol.2006 No.11
Multilayer transparent electromagnetic wave shielding film with 1 m wide, was fabricated by using roll to roll DC plasma coating with ITO and Ag layer on PET substrate. By optimizing properly the design parameters, such as a processing condition, the surface resistance and the thickness of each layers, the homogeneous film could be obtained. Electromagnetic wave shielding film showed the high shielding effectiveness of 23㏈(99.5%) in 2-18 ㎓ range and the transmittance of 83.1% in 400-700㎚.
농촌지역(農村地域) 노인대학(老人大學) 수강생(受講生)의 가족학적(家族學的) 특성(特性)에 관한 연구(硏究)
양승규(Seung Kyu Yang),정관수(Kwan Soo Chung) 한국노인복지학회 2000 노인복지연구 Vol.7 No.-
This study has been designed to analyze social and familial aspects of elderly students at a rural county senior citizen’s learning center. In this study, 88 students and 192 community residents aged 60 or more were interviewed for the study items, and the results are drawn as follows: First, the elderly students are more likely to live in extended families than elderly only households. Therefore they are more goal-oriented and actively scheduled with grandchildren than other residents. Second, majority of the students are living in single structured but rented dwelling units near market place. Third, some students are social leading class such as retired teachers, police officers, and government officials. They provide teaching materials and offer volunteer lectures for other students. Therefore in this study, it is proposed that the elderly students be activated as volunteer resources for dependent and frail community residents, and the learning centers be also located within welfare facilities so that the students can be more easily integrated with facility residents.
비정질 실리콘을 이용한 다층 유전 박막의 전기적 특성에 관한 연구
정회환(Hoi Hwan Chung),정관수(Kwan Soo Chung) 한국진공학회(ASCT) 1994 Applied Science and Convergence Technology Vol.3 No.1
ANO 구조의 캐패시터 유전체막의 전기적인 특성을 ONO 구조의 캐패시터 유전체막의 경우와 비교하였다. ONO막과 ANO막의 전기적 특성은 고주파(1 ㎒) C-V, 정전압 stress 후 고주파 C-V, I-V, TDDB와 refresh time을 측정하여 평가하였다. ANO막이 ONO막보다 높은 절연파괴전하(Q_(BD))와 축적용량을 가졌고, 긴 refresh time을 가지는 우수한 전기적 특성을 나타냈다. 또한, ONO막과 ANO막과의 누설전류와 flat band 전압변화 (△V_(fb))에서도 거의 차이가 없었다. The electrical characteristics of the capacitor dielectric films of amorphous silicon-nitride-oxide(ANO) structures are compared with the capacitor dielectric films of oxide-nitride-oxide(ONO) structures. The electrical characteristics of ONO and ANO films were evaluated by high frequency(1 ㎒) C-V, high frequency C-V after constant voltage stress, I-V, TDDB, and refresh time measurements. ANO films shows good electrical characteristics such as higher total charge to breakdown(Q_(BD)), storage capacitance and longer refresh time than ONO films. Also, it makes little difference that leakage current and flat band voltage shift(△V_(fb)) of ANO and ONO films.
전극 재료와 산화분위기에 따른 게이트 산화막의 전기적 특성에 관한 연구
정회환(Hoi Hwan Chung),정관수(Kwan Soo Chung) 한국진공학회(ASCT) 1995 Applied Science and Convergence Technology Vol.4 No.1
건식, 습식, 건식/습식 산화분위기로 성장한 게이트 산화막 위에 Al, 인 도핑된 다결정 실리콘, 비정질 실리콘/인 도핑된 다결정 실리콘을 증착하여 제작한 금속-산화물-반도체(metal-oxide-semiconductor:MOS)의 전기적 특성을 순간 절연파괴(TZDB), 정전용량-전압(C-V)과 경시절연파괴(TDDB)로 평가하였다. Al 게이트에서 습식산화막과 건식산화막의 평균 파괴전계는 각각 9.0 MV/㎝, 7.7 MV/㎝이였고, 습식산화막이 건식산화막보다 낮은 유동전하(Q_m)와 계면 고정전하(Q_(ss))을 가졌다. 다결정 실리콘 게이트에서는 습식산화악의 평균 파괴전계가 8.4 MV/㎝ 이였으며, Al 게이트보다 0.6 MV/㎝ 정도 낮았다. 이것은 다결정 실리콘/습식산화막 계면에서 인(phosphorus) 확산으로 다결정 실리콘의 grain 성장과 산화막의 migration에 의한 roughness 증가에 기인한다. 그러나 다결정 실리콘/건식산화막 계면에서 roughness 증가는 없었다. 다결정 실리콘 게이트에서는 건식/습식 산화막이 건식산화막과 습식산화막보다 평균 파괴전계와 절연파괴전하(Q_(BD))가 높았다. 또한 다결정/비정질 실리콘 게이트에서는 습식산화막의 평균 파괴전계가 8.8MV/㎝이였으며, 다결정 실리콘 게이트에서 보다 0.4MV/㎝ 정도 높았다. 다결정/비정질 실리콘 구조는 앞으로 VLSI 적용에 있어서 게이트 전극으로 매우 유용할 것이다. The electrical characteristics of metal-oxide-semiconductor(MOS) fabricated by depositing Al, phosphorus(P)-doped polysilicon and amorphous silicon(a-Si)/P-doped polysilicon(poly-Si) onto gate oxide grown by dry, wet and dry/wet oxidation ambients were evaluated by time zero dielectric breakdown(TZDB), capacitance-voltage(C-V) and time dependent dielectric breakdown(TDDB). The average breakdown field of the wet and the dry oxides with Al gate was 9.0 MV/㎝, 7.7 MV/㎝ repectively. The wet oxides with Al gate have lower Q_m(mobile oxide charge) and Q_ss(fixed oxide charge) than that of the dry oxides. The average breakdown field of the wet oxides with poly-Si gate was 8.4 MV/㎝, 0.6 MV/㎝ lower than those of the Al gate. This is attributed to the increase of roughness due to the grain growth of poly-Si gate and migration of oxide by phosphorus diffusion at the poly-Si/wet oxide interface. But, there was no the increase of roughness at the poly-Si/dry oxide interface. The average breakdown field and the total charge to breakdown (Q_(BD)) of the dry/wet oxides with poly-Si gate have higher than that of the dry, and wet oxides. Also, the average breakdown field of the wet oxides with a-Si/poly-Si gate was 8.8 MV/㎝, 0.4 MV/㎝ higher than that of the poly-Si gate. It is believed that this structure can offer a superior performance for gate electrode in furture YLSI applications.