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Cu pillar 범프 내의 금속간화합물 성장거동에 미치는 시효처리의 영향
임기태,이장희,김병준,이기욱,이민재,주영창,박영배,Lim, Gi-Tae,Lee, Jang-Hee,Kim, Byoung-Joon,Lee, Ki-Wook,Lee, Min-Jae,Joo, Young-Chang,Park, Young-Bae 한국마이크로전자및패키징학회 2007 마이크로전자 및 패키징학회지 Vol.14 No.4
시효처리에 따른 Cu pillar 범프 내 다양한 계면에서의 금속간화합물 성장거동을 각각 120, 150, $165^{\circ}C$의 온도에서 300시간동안 시효처리하면서 연구하였다. 분석 결과 Cu pillar와 SnPb 계면에서는 $Cu_6Sn_5$와 $Cu_3Sn$이 관찰되었고, 시효처리 시간이 경과함에 따라 parabolic 형태로 성장하였다. 또한 시효처리 온도가 높을수록 시간에 따른 $Cu_6Sn_5$와 $Cu_3Sn$의 성장속도는 더욱 빨랐다. kirkendall void는 Cu Pillar와 $Cu_3Sn$ 사이의 계면과 $Cu_3Sn$ 내부에서 형성되었고, 시효처리 시간이 경과함에 따라 성장하였다. 리플로우 후에 SnPb와 Ni(P)사이의 계면에서는 $(Cu,Ni)_6Sn_5$가 형성되었고, 시효처리 시간에 따른 $(Cu,Ni)_6Sn_5$거 두께 변화는 관찰되지 않았다. 시효처리 온도와 시간에 따른 금속간화합물의 두께 변화를 이용하여 전체$(Cu_6Sn_5+Cu_3Sn)$금속간화합물과 $Cu_6Sn_5,\;Cu_3Sn$ 금속간화합물의 성장에 대한 활성화 에너지를 구해본 결과 각각 1.53, 1.84, 0.81 eV의 값을 가지고 있었다. Growth kinetics of intermetallic compound (IMC) at various interface in Cu pillar bump during aging have been studied by thermal aging at 120, 150 and $165^{\circ}C$ for 300h. In result, $Cu_6Sn_5\;and\;Cu_3Sn$ were observed in the Cu pillar/SnPb interface and IMC growth followed parabolic law with increasing aging temperatures and time. Also, growth kinetics of IMC layer was faster for higher aging temperature with time. Kirkendall void formed at interface between Cu pillar and $Cu_3Sn$ as well as within the $Cu_3Sn$ layer and propagated with increasing time. $(Cu,Ni)_6Sn_5$ formed at interface between SnPb and Ni(P) after reflow and thickness change of $(Cu,Ni)_6Sn_5$ didn't observe with aging time. The apparent activation energies for growth of total $(Cu_6Sn_5+Cu_3Sn),\;Cu_6Sn_5\;and\;Cu_3Sn$ intermetallics from measurement of the IMC thickness with thermal aging temperature and time were 1.53, 1.84 and 0.81 eV, respectively.
Cu pillar 범프의 금속간화합물 성장과 계면접착에너지에 관한 연구
임기태,김병준,이기욱,이민재,주영창,박영배,Lim, Gi-Tae,Kim, Byoung-Joon,Lee, Ki-Wook,Lee, Min-Jae,Joo, Young-Chang,Park, Young-Bae 한국마이크로전자및패키징학회 2008 마이크로전자 및 패키징학회지 Vol.15 No.4
Thermal annealing and electromigration test were performed at $150^{\circ}C$ and $150^{\circ}C,\;5{\times}10^4\;A/cm^2$ conditions, respectively, in order to compare the growth kinetics of intermetallic compound(IMC) in Cu pillar bump. The quantitative interfacial adhesion energy with annealing was measured by using four-point bending strength test in order to assess the effect of IMC growth on the mechanical reliability of Cu pillar bump. Only $Cu_6Sn_5$ was observed in the Cu pillar/Sn interface after reflow. However, $Cu_3Sn$ formed and grew at Cu pillar/$Cu_6Sn_5$ interface with increasing annealing and stressing time. The growth kinetics of total($Cu_6Sn_5+Cu_3Sn$) IMC changed when all Sn phases in Cu pillar bump were exhausted. The complete consumption time of Sn phase in electromigration condition was faster than that in annealing condition. The quantitative interfacial adhesion energy after 24h at $180^{\circ}C$ was $0.28J/m^2$ while it was $3.37J/m^2$ before annealing. Therefore, the growth of IMC seem to strongly affect the mechanical reliability of Cu pillar bump. 열처리 및 electromigration에 따른 Cu pillar 범프 내 금속간화합물의 성장거동을 비교하기 위해서 각각 $150^{\circ}C$와 $150^{\circ}C,\;5{\times}10^4\;A/cm^2$의 조건에서 실험을 실시하였다. 또한 금속간화합물의 성장이 Cu pillar 범프 접합부의 기계적 신뢰성에 미치는 영향을 평가하기 위해 4점굽힘강도실험을 실시하여 열처리에 따른 계면접착에너지를 평가하였다. 리플로우 후에 Cu pillar/Sn 계면에서는 $Cu_6Sn_5$만이 관찰되었지만, 열처리 및 electromigration 실험 시간이 경과함에 따라 $Cu_3Sn$이 Cu pillar와 $Cu_6Sn_5$ 사이의 계면에서 생성되어 $Cu_6Sn_5$와 함께 성장하였다. 전체($Cu_6Sn_5+Cu_3Sn$)금속간화합물의 성장거동은 Cu pillar 범프 내 Sn이 모두 소모될 때 변화하였고, 이러한 금속간화합물 성장거동의 변화는 electromigration의 경우가 열처리의 경우보다 훨씬 빠르게 나타났다. 열처리 전 시편의 계면접착에너지는 $3.37J/m^2$이고, $180^{\circ}C$에서 24시간동안 열처리한 시편의 계면접착에너지는 $0.28J/m^2$로 평가되었다. 따라서 금속간화합물의 성장은 접합부의 기계적 신뢰성에 영향을 주는 것으로 판단된다.
Au stud 범프의 금속간화합물 성장거동에 미치는 시효처리의 영향
임기태,이장희,김병준,이기욱,이민재,주영창,박영배,Lim, Gi-Tae,Lee, Jang-Hee,Kim, Byoung-Joon,Lee, Ki-Wook,Lee, Min-Jae,Joo, Young-Chang,Park, Young-Bae 한국재료학회 2008 한국재료학회지 Vol.18 No.1
Microstructural evolution and the intermetallic compound (IMC) growth kinetics in an Au stud bump were studied via isothermal aging at 120, 150, and $180^{\circ}C$ for 300hrs. The $AlAu_4$ phase was observed in an Al pad/Au stud interface, and its thickness was kept constant during the aging treatment. AuSn, $AuSn_2,\;and\;AuSn_4$ phases formed at interface between the Au stud and Sn. $AuSn_2,\;AuSn_2/AuSn_4$, and AuSn phases dominantly grew as the aging time increased at $120^{\circ}C,\;150^{\circ}C,\;and\;180^{\circ}C$, respectively, while $(Au,Cu)_6Sn_5/Cu_3Sn$ phases formed at Sn/Cu interface with a negligible growth rate. Kirkendall voids formed at $AlAu_4/Au$, Au/Au-Sn IMC, and $Cu_3Sn/Cu$ interfaces and propagated continuously as the time increased. The apparent activation energy for the overall growth of the Au-Sn IMC was estimated to be 1.04 eV.
TiO₂ 분산 안정성 제어를 통한 LED 패키지 광 특성 및 색 균일성 향상에 대한 연구
임기태(Ki-Tae Lim),김완호(Wan-Ho Kim),여인선(In-Seon Yeo) 한국조명·전기설비학회 2017 조명·전기설비학회논문지 Vol.31 No.11
In this study, the carbon length of the TiO₂ surface property was controlled by using other surface materials in order to improve the light characteristics and color uniformity of the white LED. The surface physical properties of the TiO₂ particles were adjusted in the same manner as the physical properties of the silicone encapsulating material to ensure the dispersion stability. and The improved dispersion stability enabled to prevent the precipitation and aggregation of the particles which enhances the scattering efficiency of TiO₂. As a result of the measurement of optical characteristics, total luminous flux improvement of 3 to 8% occurred in the LED package manufactured using the surface modified TiO₂, and deviation of color uniformity due to angle could be improved.