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자기제한적 표면반응에 의한 ZnO 박막성장 및 기판온도에 따른 박막특성
이두형,권새롬,이석관,노승정,Lee, D.H.,Kwon, S.R.,Lee, S.K.,Noh, S.J. 한국진공학회 2009 Applied Science and Convergence Technology Vol.18 No.4
ZnO에 대한 박막증착 연구를 위하여 유도결합 플라즈마 원자층박막증착(inductively coupled plasma assisted atomic layer deposition: ICP-ALD) 장치를 제작하고, 장치에 대한 기본 공정조건을 설정하기 위하여 플라즈마를 유도하지 않은 상태에서 p-type Si(100) 기판 위에 ZnO 박막을 증착하는 다양한 실험을 수행하였다. Zn 전구체(precursor)로는 Diethyl zinc [$Zn(C_2H_5)_2$, DEZn]를, 반응가스(reaction gas)로는 $H_2O$를, 캐리어(carrier) 및 퍼지가스(purge gas)로는 Ar을 사용하였다. 기판온도 $150^{\circ}C$에서 DEZn, $H_2O$, Ar의 공급시간을 변화시켜가면서 자기제한적 표면반응(self-limiting surface reaction)에 의한 박막성장조건을 성공적으로 유도하였다. 기판온도를 변화시켜가면서($90{\sim}210^{\circ}C$) 증착실험을 반복하여, 본 장치에 대한 ALD 공정온도(thermal ALD process window)를 확립하고 성장된 ZnO박막에 대한 증착특성, 결정성, 불순물 및 내부조성비등을 조사하였다. ALD 공정온도는 기판온도 $110{\sim}190^{\circ}C$로써 이 구간에서의 박막 평균증착률은 0.29 nm/cycle로 일정하게 나타났다. 기판온도가 높아질수록 결정성이 향상되어 ZnO(002) 피크가 우세하였다. 모든 ALD 공정온도에서 Zn와 O로만 구성된 고순도의 ZnO 박막을 실현하였는데, 온도가 높아질수록 Zn와 O의 비가 1에 근접하며 안정된 hexagonal wurtzite ZnO 구조의 박막이 성장되었다. An inductively coupled plasma assisted atomic layer deposition(ICP-ALD) system has been constructed for the deposition of ZnO thin films, and various experiments of ZnO thin films on p-type Si(100) substrates have been carried out to find the self-limiting reaction conditions for the ICP-ALD system under non-plasma circumstances. Diethyl zinc[$Zn(C_2H_5)_2$, DEZn] was used as the zinc precursor, $H_2O$ as the oxidant, and Ar as the carrier and purge gas. At the substrate temperature of $150^{\circ}C$, atomic layer deposition conditions based on self-limiting surface reaction were successfully obtained by series of experiments through the variation of exposure times for DEZn, $H_2O$, and Ar. ZnO deposition was repeated at different substrate temperatures of $90{\sim}210^{\circ}C$. As a result, the thermal process window(ALD window) for ZnO thin films was observed to be $110{\sim}190^{\circ}C$ and the average growth rate was measured to be constant of 0.29 nm/cycle. Properties of the film's microstructure and composition(Zn, O, etc.) were also studied. As the substrate temperature increases, the crystallinity was improved and ZnO(002) peak became dominant. The films deposited at all temperatures were high purity, and the films deposited at high temperatures had the composition ratio between Zn and O closer to one of a stable hexagonal wurtzite structure.
이두형,노승정,Lee, D.H.,Noh, S.J. 한국진공학회 2007 Applied Science and Convergence Technology Vol.16 No.2
Atomic layer deposition(ALD)에 유도결합 플라즈마 소스를 채용하여 plasma enhanced ALD(PEALD)장치를 제작하고 플라즈마 발생 실험을 수행하였다. ALD와 PEALD를 이용하여 기판온도 $230^{\circ}C$에서 p-type Si(100)기판 위에 Co박막을 증착하였다. 이때, $Co_{2}(CO)_{6}$을 Co전구체로, 암모니아를 반응가스로, 아르곤을 캐리어(carrier) 및 퍼지(purge)가스로 사용하였다. 증착된 Co박막의 구성성분과 박막의 두께를 auger electron spectroscopy(AES)와 field emission scanning electron microscopy(FESEM)을 이용하여 분석하였다. ALD와 PEALD를 이용하여 증착된 Co박막에서 모두 불순물이 발견되었는데, PEALD의 경우 ALD에 비해 불순물의 양이 약 반으로 감소되었다. 암모니아 플라즈마가 Co전구체에 포함된 탄소와의 반응을 매우 효과적으로 유도하는 것으로 확인되었다. A plasma enhanced atomic layer deposition(PEALD) system has been constructed adopting an inductively coupled plasma(ICP) source with an ALD system, and its plasma generation was carried out. Cobalt thin films were deposited on a p-type Si(100) wafer at $230^{\circ}C$. $Co_{2}(CO)_{6}$ was used as a cobalt precursor, $NH_{3}$ as a reactant, and Ar as a carrier and purge gas. The properties of the thin films were investigated using field emission scanning electron microscopy(FESEM) and auger electron spectroscopy(AES). Large amounts of impurities were found in both the ALD film and the PEALD film, however, the amount of impurities in the PEALD film was reduced to about 50 % compared to that in the ALD film. It was found that $NH_{3}$ plasma, very effectively, induces the reaction with carbon in a cobalt precursor.
명순철,김왈범,이두형,김영선,Myeong, S.C.,Kim, W.B.,Lee, D.H.,Kim, Y.S. 대한생식의학회 1997 Clinical and Experimental Reproductive Medicine Vol.24 No.3
The management of varicoceles was performed on 24 patients with testicular dragging pain and/or left lower abdominal pain under local anesthesia. The surgery was completed within 20 to 45 minites, postoperative complications were severe cord edema 3 cases, wound infection 1 case, epididymitis 1 case, and postoperative anesthetic duration was 90 to 150 minites. Therefore, these procedures is cost effective and safe surgical method.
배준영(J.Y.Bae),심재진(J.J.Shim),김영범(Y.B.Kim),이두형(D.H.Lee) 한국자동차공학회 1995 한국자동차공학회 춘 추계 학술대회 논문집 Vol.1995 No.11_1
Mostly, A ride comfort of vehicle is influenced by vertical accelerations. This study is focusing on development a semi-active suspension system with Continuously variable damper(HS-SH type), only using absolute velocity of sprung mass without using the relative velocity while having lower system prices and a little energy requirement. In this paper, the system is realized in consideration to control strategy (sky-hook control, hybrid filter, etc.) and has been proved to have improvement of ride comfort effect by Quarter car and Vehicle test, respectively.<br/>
배준영(J.Y.Bae),김영범(Y.B.Kim),이두형(D.H.Lee),심재진(J.J.Shim) 한국자동차공학회 1994 한국자동차공학회 춘 추계 학술대회 논문집 Vol.- No.-
Recently. Active suspension system with low-band type for passenger cars is developed to improve both ride comfort and handling. In this study. the height control with mode evaluation controller is proposed to resolve the problems such as maintaining vehicle posture. a sensitive speed and variable height adjustment. the results of test have confirmed that height of vehicle can be converged to a goal region.<br/> <br/>
Ti-Al 반사막을 이용한 405 ㎚ LED의 광추출 효율 향상
김창연(C. Y. Kim),권새롬(S. R. Kwon),이두형(D. H. Lee),노승정(S. J. Noh) 한국진공학회(ASCT) 2008 Applied Science and Convergence Technology Vol.17 No.3
Metal organic chemical vapor deposition (MOCVD)를 이용하여 사파이어 기판 위에 405 ㎚의 파장을 갖는 GaN light-emitting diode (LED)를 제작하였다. LED의 InGaN 활성층에서 생성되어 칩의 후면으로 향하는 광자를 전면으로 반사시키기 위하여. 사파이어 가판 후면에 반사막을 증착하였다. 반사막으로는 Al을 사용하였으며, 사파이어 기판에 대한 Al 박막의 접착력을 개선하기 위하여 사파이어 기판 후면에 Ti를 먼저 증착한 후에 Al을 증착하였다. Ti-Al 반사막을 채용한 결과, 광추출 효율이 52% 향상되었다. GaN-based light-emitting diodes (LEDs) of a 405 ㎚ wavelength have been fabricated on a sapphire substrate by metal organic chemical vapor deposition (MOCVD). In order to reflect the photons, which are generated in the InGaN active region and emitted to the backside, to the front surface, a reflection layer was deposited onto the back of the substrate. Aluminum was used as the reflection layer and Al was deposited on the sample followed by Ti evaporation for firm adhesion of the reflection layer to the substrate. The light extraction efficiency was enhanced 52% by adoption of the Ti-Al reflection layer.
1/4車 시험기를 이용한 능동현가계의 제어에 관한 연구
김영범(Y.B.Kim),배준영(J.Y.Bae),이두형(D.H.Lee),심재진(J.J.Shim) 한국자동차공학회 1994 한국자동차공학회 춘 추계 학술대회 논문집 Vol.- No.-
Generally, active suspension system is divided with low band active suspension system and full active suspension system. This active suspension system is reported system which is satisfied with ride and handling by control of the vehicle motions( bounce, pitch and roll). Presently, a study of active suspension system is also within the country proceeding actively, Therefore, this paper describes the test results of gain variation using sky-hook control theory suggested by Karnopp.<br/>
이혜영,장세명,이두형,황보종연 대한성형외과학회 1991 Archives of Plastic Surgery Vol.8 No.1
Cryptotia is a rare congenital anomaly of the auricle characterized by failure of extrusion of cartilage framework from the side of the head and byrying under the temporal skin. Several kinds of surgical reconstructions have been suggested to effect esthetic improvement and to permit the wearing of spectacles since Kubo's V-Y plasty. The aims of and repair are threefold-to release the upper ear from the side of the head, to correct malposition, and to restore the retroauricular groove. The main emphasis of the operation are to cover the skin defect on the posterior aspect of the ear after it is dessected from the head, and to repair the cartilagenous deformity. authors have experienced 9 patients of the cryptotia during 5 years from Jan. 1975 to dec. 1980. and got satisfactory results using Ohmori method and Onizuka method.