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Hot Wall Epitaxy(HWE)법에 의한 MnAl<sub>2</sub>S<sub>4</sub> 단결정 박막 성장과 광전도 특성
유상하,이기정,홍광준,문종대,You, Sangha,Lee, Kijeong,Hong, Kwangjoon,Moon, Jongdae 한국결정성장학회 2014 韓國結晶成長學會誌 Vol.24 No.6
수평 전기로에서 $MnAl_2S_4$ 다결정을 합성하여 HWE(Hot Wall Epitaxy)방법으로 $MnAl_2S_4$ 단결정 박막을 반절연성 GaAs(100)기판에 성장시켰다. $MnAl_2S_4$ 단결정 박막의 성장 조건은 증발원의 온도 $630^{\circ}C$, 기판의 온도 $410^{\circ}C$였고 성장 속도는 $0.5{\mu}m/hr$였다. 이때 $MnAl_2S_4$ 단결정 박막의 결정성의 조사에서 이중결정 X-선 요동곡선(DCRC)의 반폭치(FWHM)도 132 arcsec로 가장 작아 최적 성장 조건임을 알 수 있었다. $MnAl_2S_4$/SI(Semi-Insulated) GaAs(100) 단결정 박막의 광흡수를 293 K에서 10 K까지 측정하였다. 광흡수 스펙트럼으로부터 band gap $E_g(T)$는 Varshni 공식에 따라 계산한 결과 $E_g(T)=3.7920eV-(5.2729{\times}10^{-4}eV/K)T^2/(T+786K)$였다. $MnAl_2S_4$ 단결정 박막의 응용소자인 photocell로 사용할 수 있는 pc/dc 값이 가장 큰 광전도셀은 S 증기분위기에서 열처리한 셀로 $1.10{\times}10^7$이었으며, 광전도 셀의 감도(sensitivity)도 S 증기분위기에서 열처리한 셀이 0.93로 가장 좋았다. 또한 최대 허용소비전력(MAPD)값도 S 증기분위기에서 열처리한 셀이 316 mW로 가장 좋았으며, S 증기분위기에서 열처리한 셀의 응답시간은 오름시간 14.8 ms, 내림시간 12.1 ms로 가장 빠르게 나타나, $MnAl_2S_4$ 단결정 박막을 S 분위기에서 $290^{\circ}C$로 30분 열처리한 photocell이 상용화가 가능할 것으로 여겨진다. A stoichiometric mixture of evaporating materials for $MnAl_2S_4$ single crystal thin films was prepared from horizontal electric furnace. To obtain the single crystal thin films, $MnAl_2S_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperatures were $630^{\circ}C$ and $410^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $MnAl_2S_4$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=3.7920eV-5.2729{\times}10^{-4}eV/K)T^2/(T+786 K)$. In order to explore the applicability as a photoconductive cell, we measured the sensitivity (${\gamma}$), the ratio of photocurrent to dark current (pc/dc), maximum allowable power dissipation (MAPD) and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in S vapour compare with in Mn, Al, air and vacuum vapour. Then we obtained the sensitivity of 0.93, the value of pc/dc of $1.10{\times}10^7$, the MAPD of 316 mW, and the rise and decay time of 14.8 ms and 12.1 ms, respectively.
유상하,홍광준,이상렬,신용진,이관교,서상석,김승욱,정준우,신영진,정태수,신현길,김택성,문종대,You S.H.,Hong K.J.,Lee S.Y.,Shin Y.J.,Lee K.K.,Suh S.S.,Kim S.U.,Jeong J.W.,Shin Y.J.,Jeong T.S.,Shin B.K.,Kim T.S.,Moon J.D. 한국결정학회 1997 韓國結晶學會誌 Vol.8 No.1
[ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$과 ${\Delta}so$는 각각 0.046, 0.014 eV였다. [ $CuInTe_2$ ] synthesised in a horizontal electric furnace was found to be polycrystalline. Single crystals of $CuInTe_2$ were grown with the vertical Bridgman technique. The photoconductivity and photoluminescence of the crystals were measured in the temperature range 20 to 293 K. From the photocurrent peaks measured for the samples both perpendicular and parallel to c-axis, the energy band gaps of the samples were found to be 0.948 eV and 0.952 eV at room temperature respectively. The energy difference of the photocurrent and photoluminescence peaks of the samples both perpendicular and parallel to the c-axis measured at room temperature was a phonon energy, and its values were 22.12 meV and 21.4 meV respectively. The splitting of the valence band due to spin-orbit and crystal field interaction was calculated from the photocurrent spectra of the samples, The ${\Delta}cr\;and\;{\Delta}so$ are 0.046,0.014 eV respectively.
n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지의 제작과 그 특성에 관한 연구
유상하(Sang-Ha You),최승평(Seung-Pyung Choi),이상열(Sang-Youl Lee),홍광준(Kwang-Joon Hong),서상석(Sang-Suhg Suh),김혜숙(Hye-Suk Kim),전승룡(Seung-Yong Jeon),윤은희(Eun-Hee Yun),문종대(Jong-Dae Moon),신영진(Yeong-Jin Shin),정태수(Tae- 한국태양에너지학회 1993 한국태양에너지학회 논문집 Vol.13 No.1
승화방법에 의해 CdS_0.46Se_0.54 단결정을 성장하여 결정구조를 조사하고, Van der Pauw 방법으로 Hall effect를 측정하여 carrier density의 온도 의존성과 mobility의 온도 의존성을 조사하였다.<br/> 성장된 CdS_0.46Se_0.54 단결정을 치환반응 하여 n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 이종접합 태양전지를 제작하였다. Special response, 전류 - 전압특성 및 전력변환 효율을 조사하여 그 결과로부터 개방전압은 0.48V, 단락 전류 밀도는 21mA/㎠,fill factor와 전력변환효율은 각각 0.75와 9.5%를 얻었다. CdS_0.46Se_0.54 single crystal was grown by a sublimation method.<br/> The crystal structure and the temperature dependence of carrier density and mobility of CdS_0.46Se_0.54 single crystal were studied.<br/> Heterojunction solar cells of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 were fabricated by the substitution reaction.<br/> The spectral response, the J - V characteristics and the conversion efficiency of the n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells were studied.<br/> The open-circuit voltage, short-circuit density, fill factor and conversion efficiency of n-CdS_0.46Se_0.54/p-Cu_2-xS_0.46Se_0.54 heterojunction solar cells under 80mW/㎠ illumination were found to be 0.48V, 21mA/㎠, 0.75 and 9.5% respectively.
홍광준,이상열,유상하,서상석,문종대,신영진,정태수,신현길,김택성,송정훈,유기수 ( K . J . Hong,S . Y . Lee,S . H . You,S . S . Suh,J . D . Moon,Y . J . Shin,T . S . Jeoung,H . K . Shin,T . S . Kim,J . H . Song,K . S . Rheu ) 한국센서학회 1993 센서학회지 Vol.2 No.1
Polycrystalline CdS thin films were grown on ceramic substrate using a chemical bath deposition method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometer in order to study CdS polycrystal structure. Using extrapolation method of X-ray diffraction patterns for the CdS samples annealed in N₂ gas at 5500 it was found hexagonal structure whose lattice constants a_o and c_o were 4.1364 Å and 6.7129 Å, respectively. Its grain size was about 0.35 ㎛. Hall effect on this sample was measured by Van der Pauw method and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by piezo electric scattering at temperature range of 33K and 150K and by polar optical scattering at temperature range of 150K and 293K. We measured also spectral response, sensitivity (γ), maximum allowable power dissipation and response time on these samples.
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김택성,문종대,이충일,전승룡 ( S . Y . Lee,K . J . Hong,S . G . You,Y . j . Shin,K . K . See,S . S . Suh,H . S . Kim,E . H . Yun,S . U . Kim,H . S . Park,Y . 센서 한국센서학회 1995 센서학회지 Vol.4 No.3
Polycrystalline Cd_(1-x)Zn_xS thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X-ray diffraction patterns were measured by X-ray diffractometor in order to study Cd_(1-x)Zn_xS polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in N₂ gas at 550 ℃. It was found hexagonal structure which had the lattice constant a_o = 4.1364Å, c_o=6.7129Å in CdS and a_o = 3.8062Å, c_o = 6.2681 Å in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample
$Cd_{1-x}Zn_{x}S$ 박막의 성장과 광전도 특성
이상열,홍광준,유상하,신용진,이관교,서상석,김혜숙,윤은희,김승욱,박향숙,신영진,정태수,신현길,김태성,문종대,이충일,전승룡,Lee, S.Y.,Hong, K.J.,You, S.H.,Shin, Y.J.,Lee, K.K.,Suh, S.S.,Kim, H.S.,Yun, E.H.,Kim, S.U.,Park, H.S.,Shin, Y.J.,Jeong, T.S.,Shin, 한국센서학회 1995 센서학회지 Vol.4 No.3
Chemical bath deposition(C.B.D.)방법으로 다결정 $Cd_{1-x}Zn_{x}S$ 박막을 스라이드 유리(coming-2948) 기판위에 성장시켜 열처리하고 X-선 회절무늬를 측정하여 결정구조를 밝혔다. $550^{\circ}C$로 $N_{2}$ 속에서 열처리한 시료의 X-선 회절무늬로부터 외삽법으로 구한 격자상수는 CdS인 경우 $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$였으며 ZnS인 경우는 $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$였다. Van der Pauw 방법으로 Hall 효과를 측정하여 운반자 농도와 이동도의 온도 의존성을 연구하였다. 광전도 셀의 특성으로 스펙트럼응답 감도, 최대허용소비전력 및 응답시간을 측정하였다. Polycrystalline $Cd_{1-x}Zn_{x}S$ thin film were grown on slide glass(corning-2948) substrate using a chemical bath deposition (C.B.D) method. They were annealed at various temperature and X -ray diffraction patterns were measured by X-ray diffractometor in order to study $Cd_{1-x}Zn_{x}S$ polycrystal structure using extrapolation method of X-ray diffraction patterns for the CdS, ZnS sample annealed in $N_{2}$ gas at $550^{\circ}C$. It was found hexagonal structure which had the lattice constant $a_{0}\;=\;4.1364{\AA}$, $c_{0}\;=\;6.7129{\AA}$ in CdS and $a_{0}\;=\;3.8062{\AA}$, $c_{0}\;=\;6.2681{\AA}$ in ZnS, respectively. Hall effect on these sample was measured by Van der Pauw method and then studied on carrier density and mobility depending on temperature. We measured also spectral response, sensitivity maximum allowable power dissipation and response time on these sample.
HWE 방법에 의한 CdSe 박막 성장과 광전기적 특성
홍광준,이관교,이상열,유상하,신용진,서상석,정준우,정경아,신영진,정태수,김택성,문종대,김혜숙 ( K . J . Hong,K . K . Lee,S . Y . Lee,S . H . You,Y . J . Shin,S . S . Suh,J . W . Jeong,K . A . Jeong,Y . J . Shin,T . S . Jeong,T . S . Kim,J . D 한국센서학회 1997 센서학회지 Vol.6 No.4
The CdSe thin films were grown on the Si(100) wafers by a hot wall epitaxy method (HWE). The source and substrate temperature are 600? and 430 respectively. The crystalline structure of epilayers was investigated by double crystal X-ray diffraction(DCXD). Hall effect on the sample was measured by the van der Pauw method and studied on the carrier density and mobility dependence on temperature. From Hall data, the mobility was increased in the temperature range 30K to 150K by impurity scattering and decreased in the temperature range 150K to 293K by the lattice scattering. In order to explore the applicability as a photoconductive cell, we measured the sensitivity(γ), the ratio of photocurrent to darkcurrent(pc/dc), maximum allowable power dissipation(MAPD), spectral response and response time. The results indicated that the photoconductive characteristic were the best for the samples annealed in Cu vapor compare with in Cd, Se, air and vacuum vapour. Then we obtained the sensitivity of 0.99, the value of pc/dc of 1.39 X 10^7, the MAPD of 335mW, and the rise and decay time of l0ms and 9.5ms, respectively