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반도체 메모리 소자 응용을 위한 TaSiN 확산 방지층의 산화 저항성
신웅철,이응민,최영심,최규정,최은석,전영아,박종봉,윤순길,Shin, Woong-Chul,Lee, Eung-Min,Choi, Young-Sim,Choi, Kyu-Jeong,Choi, Eun-Suck,Jeon, Young-Ah,Park, Jong-Bong,Yoon, Soon-Gil 한국재료학회 2000 한국재료학회지 Vol.10 No.11
약 90 nm 두께의 비정질 TaSiN박막을 poly-Si and $SiO_2/Si$ 기판 위에 rf magnetron sputtering법으로 증착하였다. TaSiN박막은 산소부위기에서 열처리 시 $ 900^{\circ}C$까지 결정화되지 않는 비정질 상을 보였다. 산소의 확산 깊이는 산소분위기 열처리 온도가 증가함에 따라 증가하였으며 $650^{\circ}C$, 30분 열처리시 $Ta_{23}Si_{29}N_{48}$의 경우 약 20 nm의 깊이까지 확산되었다. $Ta_{23}Si_{29}N_{48}$ 박막의 증착 후 비저항은 약 $1,300{\mu}{\Omega}-cm$의 값을 보였지만 산소분위기 열처리시 $700^{\circ}C$ 이상에서 급격히 증가하였다. Amorphous TaSiN thin films of about 90 nm thick were deposited onto poly-Si and $SiO_2/Si$ substrates by rf magnetron sputtering method. TaSiN films exhibited amorphous phase with no crystllization up to $900^{\circ}C$ in oxygen ambient. The penetration depth of oxygen diffusion increased with increasing annealing temperature in oxygen ambient and reached 20 nm deep in a $Ta_{23}Si_{29}N_{48}$ layer at $600^{\circ}C$ for 30min. The resistivity of as-deposited $Ta_{23}Si_{29}N_{48}$ thin films was about $1,300{\mu}{\Omega}-cm$, however those of annealed films markedly increased above $700^{\circ}C$ in oxygen ambient as the annealing temperature increased.
원자층 증착법으로 제조된 Al-doped ZnO 투명전도막의 특성평가
정현준,신웅철,윤순길,Jung, Hyun-June,Shin, Woong-Chul,Yoon, Soon-Gil 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.2
AZO transparent conductive thin films were grown on $SiO_2$/Si and glass substrates using diethylzinc (DEZ) and trimethylaluminium (TMA) as the precursor and $H_2O$ as oxidant by atomic layer deposition. The structural, electrical, and optical properties of the AZO films were characterized as a function of film thickness at a deposition temperature of $150^{\circ}C$. The AZO films with various thicknesses show well-crystallized phases and smooth surface morphologies. The 190-nm-thick AZO films grown on Coming 1737 glass substrates exhibit rms(root mean square) roughness of 8.8 nm, electrical resistivity of $1.5{\times}10^{-3}\;{\Omega}-cm$, and an optical transmittance of 84% at 600nm wavelength. Atomic layer deposition technique for the transparent conductive oxide films is possible to apply for the deposition on flexible polymer substrates.