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An Effective Synthetic Approach for Cyclic Olefin Polymers with Enhanced Thermal Properties
소종호,김상율 한국고분자학회 2021 한국고분자학회 학술대회 연구논문 초록집 Vol.46 No.2
Transparent polymers with good optical properties have attracted significant attention due to their potential in a wide range of applications, including optical storage device, optical fiber, sheet product, camera lenses, projection displays and diffractive optical lenses. Among many transparent polymers, cyclic olefin polymers have excellent transparency, good chemical resistance, and low birefringence. However, for automotive applications, high glass transition temperature is necessary because it is directly related to the thermal stability required for end use. COPs are mainly synthesized through ROMP of cycloolefin followed by subsequent hydrogenation of remaining double bonds in the polymer backbone. The hydrogenation enhances the chemical resistance and heat resistance of COPs obtained by ROMP, but decreases the glass transition temperature due to the increased backbone flexibility. Herein, we report the functionalization of COPs to enhance the thermal properties of COPs.
세륨염을 첨가한 황산법 양극산화피막의 오염입자 및 열크랙 거동
소종호,윤주영,신재수 한국반도체디스플레이기술학회 2018 반도체디스플레이기술학회지 Vol.17 No.4
The parts of equipment for semiconductor are protected by anodic aluminum oxide film to prevent corrosion. This study investigated contamination particle and cracking behavior of anodic oxidation in sulfuric acid containing cerium salt. The insulating properties of the sample were evaluated by measuring the breakdown voltage. It was confirmed that the breakdown voltage was about 50% higher when the cerium salt was added, and that the breakdown voltage after the heat treatment was 55% and 35% higher at 300℃ and 400℃, respectively. After heating at 300℃ and 400℃, cracks were observed in non cerium and cerium 3mM, and more cracks occur at 400℃ than at 300℃. The amount of contamination particles generated in the plasma is about 45% less than that of non-cerium specimens.
Ce ion이 첨가된 황산 아노다이징의 온도 변화에 따른 내플라즈마 특성
소종호,윤주영,신재수,So, Jongho,Yun, Ju-Young,Shin, Jae-Soo 한국반도체디스플레이기술학회 2021 반도체디스플레이기술학회지 Vol.20 No.1
We report on the formation of anodic aluminum oxide (AAO) film using sulfuric acid containing cerium salt. When the temperature of the sulfuric acid containing cerium salt changes from 5 ℃ to 20 ℃, the current density and the thickness growth rate increase. The surface morphology of the AAO film change according to the temperature of the electrolytes. And that affected the breakdown voltage and the plasma etch rate. The breakdown voltage per unit thickness was the highest at 15 ℃, and the plasma etch rate was the lowest at 10 ℃ at 2.80 ㎛/h.
Atmospheric Plasma Spray코팅을 이용한 Yttrium계 소재의 내플라즈마성 및 세정 공정에 관한 연구
권혁성,김민중,소종호,신재수,정진욱,맹선정,윤주영,Kwon, Hyuksung,Kim, Minjoong,So, Jongho,Shin, Jae-Soo,Chung, Chin-Wook,Maeng, SeonJeong,Yun, Ju-Young 한국반도체디스플레이기술학회 2022 반도체디스플레이기술학회지 Vol.21 No.3
In this study, the plasma corrosion resistance and the change in the number of contamination particles generated using the plasma etching process and cleaning process of coating parts for semiconductor plasma etching equipment were investigated. As the coating method, atmospheric plasma spray (APS) was used, and the powder materials were Y<sub>2</sub>O<sub>3</sub> and Y<sub>3</sub>Al<sub>5</sub>O<sub>12</sub> (YAG). There was a clear difference in the densities of the coatings due to the difference in solubility due to the melting point of the powdered material. As a plasma environment, a mixed gas of CF<sub>4</sub>, O<sub>2</sub>, and Ar was used, and the etching process was performed at 200 W for 60 min. After the plasma etching process, a fluorinated film was formed on the surface, and it was confirmed that the plasma resistance was lowered and contaminant particles were generated. We performed a surface cleaning process using piranha solution(H<sub>2</sub>SO<sub>4</sub>(3):H<sub>2</sub>O<sub>2</sub>(1)) to remove the defect-causing surface fluorinated film. APS-Y<sub>2</sub>O<sub>3</sub> and APS-YAG coatings commonly increased the number of defects (pores, cracks) on the coating surface by plasma etching and cleaning processes. As a result, it was confirmed that the generation of contamination particles increased and the breakdown voltage decreased. In particular, in the case of APS-YAG under the same cleaning process conditions, some of the fluorinated film remained and surface defects increased, which accelerated the increase in the number of contamination particles after cleaning. These results suggest that contaminating particles and the breakdown voltage that causes defects in semiconductor devices can be controlled through the optimization of the APS coating process and cleaning process.