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성영권,백영학,차균현 대한전기학회 1970 전기의 세계 Vol.19 No.6
The object of this project is to manifest the mechanism of deterioration phenomena for dielectrics causing corona discharge and applies it for determine the standard corona detection technique. As the results, we observed that corona discharges may occur more strongly around cylindrical shape electrode in air than hemisphere shape electrode in vacuum, so that it depends on effects such as shape of the electrode, moisture, surface coditions, etc. According to observed the deterioration of dielectrics takes place in following stages. At first the attacked surface by an electron avalanche is uniformly eroded; then pits are formed; after that sharp channels are formed which lead to break-down as a treeing. The test are accelerated with higher frequencies by the cylindrical bar shape electrode in the pulse stright detection method more sensitive than Lissajous patterns. Lissajous patterns detection method is simple but usually insensitive and has disadvantage that the magnitude of the individual discharge is not measured.
Epitaxial에 의한 Si epi층의 케리어 수명과 P-N접합의 이상전도현상
성영권,민남기,김승배 대한전기학회 1977 전기의 세계 Vol.26 No.5
This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.
Sputtered a-Si 의 성장조건이 미치는 영향에 관한 연구
성영권,송진수,함윤석,민병무 고려대학교 공학기술연구소 1985 고려대학교 생산기술연구소 생기연논문집 Vol.21 No.1
The electrical and optical properties, such as, deposition rate, dark conductivities, and optical band gap, of sputtered deposited amorphous silicon (a-Si) films have been systematically investigated for deposition parameters for the case of pure Ar sputtering gas in rf diode system as a series of pre-studies for the sputter deposition a-Si:H films in Ar/ H₂ mixtures. The variation of the Ar gas pressure (P_(Ar)) from 5 to 40m Torr controllably and reproducibly decrease the film dark conductivity 5 orders of magnitude, and significantly increases the optical band gap. The variation of the rf power from 200w to 400w increases the dark conductivity 0.5 orders of magnitude and decrease the optical band gap. The P_(Ar) has an strong effect on the a-Si films more than that of the rf power, and the influence of gas pressure has been linked to Ar ion bombardment of the growing film which appears responsible for both high dangling-bond densities and incorporated gas. The optimization of deposition conditions result in remarkalby good electrical and optical properties for nonhydrogenated a-Si.
단일양자 우물구조로 된 공명 터널링 다이오드에서의 터널링 시간
성영권,김성진,이철진 고려대학교 공학기술연구소 1992 고려대학교 생산기술연구소 생기연논문집 Vol.28 No.1
The quantum mechanical tunneling time through a double barrier resonant tunneling diode is calculated for incident electron energies. One of the most important issues for ultrahigh speed applications is the response property which seems to be directly related to the time required for an electron to tunnel through the device. In this paper, we obtain the time tunneling time delay from a steady state scattering approach using the result of Wigner which provides a easy-to-use result which can avoid time-consuming numerical computations. The result is believed to be accurate since it is based on general results for the lifetime of any resonant state. The tunneling time delay considered in here indicates that the ultimate device response of GaAs/AIGaAs double barrier diodes (DBDs) is in the sub-picosecond regime.