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리튬이차전지용 탄소 코팅된 Li<sub>2</sub>MnSiO<sub>4</sub> 양극활물질의 상형성 거동 및 충방전 특성
선호정,채수만,심중표,Sun, Ho-Jung,Chae, Suman,Shim, Joongpyo 한국전기화학회 2015 한국전기화학회지 Vol.18 No.4
Planetary ball mill과 고상반응법을 사용하여 실리케이트계 탄소 코팅된 $Li_2MnSiO_4$ 양극활물질 분말을 합성하였으며 충방전 특성을 조사하였다. 전기화학적 활성을 지니는 ${\beta}-Li_2MnSiO_4$ 상을 형성하기 위하여 하소 온도와 분위기를 조절하였으며 ${\beta}-Li_2MnSiO_4$ 단일상에 가까운 탄소 코팅된 $Li_2MnSiO_4$ 활물질 분말을 제조할 수 있었다. 합성된 분말은 100 nm 정도 크기의 1차 입자가 뭉쳐있는 2차 입자 형태를 보였다. $Li_2MnSiO_4$ 활물질에서 Li의 삽입/탈리가 가능하려면 탄소의 첨가가 필요하였으며, 4.8 wt%의 탄소가 코팅된 $Li_2MnSiO_4$ 활물질에서 초기용량 192 mAh/g를 얻을 수 있었다. Carbon-coated $Li_2MnSiO_4$ powders as the active materials for the cathode were synthesized by planetary ball milling and solid-state reaction, and their phase formation behavior and charge-discharge properties were investigated. Calcination temperature and atmosphere were controlled in order to obtain the ${\beta}-Li_2MnSiO_4$ phase, which was active electrochemically, and the carbon-coated $Li_2MnSiO_4$ active material powders with near single phase ${\beta}-Li_2MnSiO_4$ could be fabricated. The particles of the synthesized powders were secondary particles composed of primary ones of about 100 nm size. The carbon incorporation was essential to enable the Li ions to be inserted and extracted from $Li_2MnSiO_4$ active materials, and the initial capacity of 192 mAh/g could be obtained in the $Li_2MnSiO_4$ active materials with 4.8 wt% of carbon.
RF 마그네트론 스퍼터법을 사용한 전도성 SrMoO<sub>3</sub> 박막 제조 및 전기전도특성 평가
유희욱,선호정,Ryu, Hee-Uk,Sun, Ho-Jung 한국전기전자재료학회 2011 전기전자재료학회논문지 Vol.24 No.6
Conductive $SrMoO_3$ thin films were fabricated by RF magnetron sputtering with the powder-type sputtering target, and annealed for crystallization. When RTP (rapid thermal processing) in vacuum was applied, the fabricated thin films showed the mixed phases of $SrMoO_3$ and $SrMoO_4$, but $SrMoO_3$ phase could be promoted by the lowering of the working pressure during deposition. In order to eliminate $O_2$ gas during deposition and annealing, further lowering of the working pressure and furnace annealing in hydrogen atmosphere were tried. With the optimization of the deposition and annealing conditions, the thin film with nearly single-phase of $SrMoO_3$ was obtained, and it showed good electrical conduction properties with a low resistivity of $2.5{\times}10^{-3}{\Omega}{\cdot}cm$ at room temperature.
금속유기분해 법으로 제조한 ZrTiO<sub>4</sub> 박막의 미세구조 및 고주파 유전특성
박창순,선호정,Park, Chang-Sun,Sun, Ho-Jung 한국전기전자재료학회 2009 전기전자재료학회논문지 Vol.22 No.1
$ZrTiO_4$ dielectric thin films were coated by metal-organic decomposition, and annealed by rapid thermal processing up to $900^{\circ}C$ for their crytallization. Crystallized single-phase $ZrTiO_4$ thin films were fabricated above the annealing temperature of $800^{\circ}C$, but their grains were randomly oriented without specific textured orientation. Best dielectric properties were presented by the sample annealed at $800^{\circ}C$ which had crystalline structure and flat surface. Dielectric constant of the film was maintained at 32 throughout full frequency range up to 6 GHz, and dielectric loss was varied between 0.01 and 0.04.
RF 스퍼터법을 이용한 Sr<sub>2</sub>FeMoO<sub>6</sub> 박막 제조 및 전기전도 특성
유희욱,선호정,Ryu, Hee-Uk,Sun, Ho-Jung 한국전기전자재료학회 2010 전기전자재료학회논문지 Vol.23 No.12
Single-phase $Sr_2FeMoO_6$ thin films were produced by RF magnetron sputtering for use as electrodes in integrated sensors and found to be good conductors at room temperature. The films were deposited from a powder-type sputtering target under various conditions, and were crystallized by annealing. Elimination of $O_2$ gas during deposition, by the use of a solely Ar sputtering gas under a working pressure as low as possible, and vacuum annealing were important to promote the $Sr_2FeMoO_6$ phase. However, oxygen exclusion from sputtering and annealing was not enough to yield single-phase $Sr_2FeMoO_6$: hydrogen annealing was also required. Film production was optimized by varying the deposition parameters and hydrogen annealing conditions. The film had good electrical conduction, with a low resistivity of $1.6{\times}10^{-2}\Omega{\cdot}cm$ at room temperature.
RF 스퍼터 증착과 후속 열처리에 의한 Na<sub>0.6</sub>WO<sub>3</sub> 박막의 상형성 거동과 전기전도 특성
이승현,선호정,Lee, Seung-Hyun,Sun, Ho-Jung 한국전기전자재료학회 2014 전기전자재료학회논문지 Vol.27 No.8
Thin films of cubic $Na_{0.6}WO_3$, which is one of the sodium tungsten bronze, were fabricated by rf sputtering for the electrode applications in integrated sensors and actuators. A single-phase cubic $Na_{0.6}WO_3$ sputtering target of power type was prepared by conventional solid-state reaction. Thin films were deposited from the powder target, and the as-deposited films were amorphous, thus they annealed by tube furnace or RTP for crystallization. Thin films having cubic phase $Na_xWO_3$ were fabricated by the optimization of sputtering and post-annealing conditions, but single-phase cubic $Na_{0.6}WO_3$ thin films were not obtained. Although the films were not in single phase, they had good electrical conduction properties showing electrical resistivities of $10-4{\Omega}{\cdot}cm$ order.
RF 스퍼터법을 이용한 Li<sub>2</sub>MnSiO<sub>4</sub> 리튬 이차전지 양극활물질 박막 제조 및 전기화학적 특성
채수만,심중표,선호정,Chae, Suman,Shim, Joongpyo,Sun, Ho-Jung 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
In this study, $Li_2MnSiO_4$ cathode material and LiPON solid electrolyte were manufactured into thin films, and the possibility of their use in thin-film batteries was researched. When the RTP treatment was performed after $Li_2MnSiO_4$ cathode thin-film deposition on the SUS substrate by a sputtering method, a ${\beta}-Li_2MnSiO_4$ cathode thin film was successfully manufactured. The LiPON solid electrolyte was prepared by a reactive sputtering method using a $Li_3PO_4$ target and $N_2$ gas, and a homogeneous and flat thin film was deposited on a $Li_2MnSiO_4$ cathode thin film. In order to evaluate the electrochemical properties of the $Li_2MnSiO_4$ cathode thin films, coin cells using only a liquid electrolyte were prepared and the charge/discharge test was conducted. As a result, the amorphous thin film of RTP treated at $600^{\circ}C$ showed the highest initial discharge capacity of about $60{\mu}Ah/cm^2$. In cases of coin cells using liquid/solid double electrolyte, the discharge capacities of the $Li_2MnSiO_4$ cathode thin films were comparable to those without solid LiPON electrolyte. It was revealed that $Li_2MnSiO_4$ cathode thin films with LiPON solid electrolyte were applicable in thin film batteries.
고상반응법을 이용한 Li<sub>2</sub>MnSiO<sub>4</sub> 합성
김지수,심중표,박경세,선호정,Kim, Ji-Su,Shim, Joong-Pyo,Park, Gyung-Se,Sun, Ho-Jung 한국전기전자재료학회 2012 전기전자재료학회논문지 Vol.25 No.5
Synthesis of $Li_2MnSiO_4$ was attempted by the conventional solid-state reaction method, and the phase formation behavior according to the change of the calcination condition was investigated. When the mixture of the three source materials, $Li_2O$, MnO and $SiO_2$ powders, were used for calcination in air, it was difficult to develop the $Li_2MnSiO_4$ phase because the oxidation number of $Mn^{2+}$ could not be maintained. Therefore, two-step calcination was applied: $Li_2SiO_3$ was made from $Li_2O$ and $SiO_2$ at the first step, and $Li_2MnSiO_4$ was synthesized from $Li_2SiO_3$ and MnO at the second step. It was easy to make $Li_2MnSiO_3$ from $Li_2O$ and $SiO_2$. $Li_2MnSiO_4$ single phase was developed by the calcination at $900^{\circ}C$ for 24 hr in Ar atmosphere as the oxidation of $Mn^{2+}$ was prevented. However, the $Li_2MnSiO_4$ was ${\gamma}-Li_2MnSiO_4$, one of the polymorph of $Li_2MnSiO_4$, which could not be used as the cathode materials in Li-ion batteries. By applying the additional low temperature annealing at $400^{\circ}C$, the single phase ${\beta}-Li_2MnSiO_4$ powder was synthesized successfully through the phase transition from ${\gamma}$ to ${\beta}$ phase.
김영민,김남경,염승진,장건익,류성림,선호정,권순용,Kim, Young-Min,Kim, Nam-Kyeong,Yeom, Seung-Jin,Jang, Gun-Eik,Ryu, Sung-Lim,Sun, Ho-Jung,Kweon, Soon-Yong 한국전기전자재료학회 2007 전기전자재료학회논문지 Vol.20 No.7
A 16 Mb 1T1C FeRAM device was integrated with BLT capacitors. But a lot of cells were failed randomly during the measuring the bit-line signal distribution of each cell. The reason was revealed that the grain size and orientation of the BLT thin film were severely non-uniform. And the grain size and orientation were severely affected by the process conditions of post heat treatment, especially nucleation step. The optimized annealing temperature at the nucleation step was $560^{\circ}C$. The microstructure of the BLT thin film was also varied by the annealing time at the step. The longer process time showed the finer grain size. Therefore, the uniformity of the grain size and orientation could be improved by changing the process conditions of the nucleation step. The FeRAM device without random bit-fail cell was successfully fabricated with the optimized BLT capacitor and the sensing margin in bit-line signal distribution of it was about 340 mV.