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허진,김영학,신광호,사공건,Hur, J.,Kim, Y.H.,Shin, K.H.,Sa-Gong, G. 한국전기전자재료학회 2004 전기전자재료학회논문지 Vol.17 No.1
Magneto-Impedance(MI) sensor is a highly sensitive sensor, which was able to detect a weak geomagnetic field. It also has a merit to be able to build in the low power system. In this study, their magnetic permeability and anisotropy field(H$\sub$k/) as a function of some different thickness of sputtered amorphous CoZrNb films with zero-magnetostriction and soft magnetic property are investigated. In order to make a uniaxial anisotropy, film was subjected to the post annealing in a static magnetic field with 1KOe intensity at 250, 300, and 320$^{\circ}C$ respectively for 2 hours. Magnetic properties of films are measured by using a M-H loop tracer. Magnetic permeability of a film is measured over the frequency range from 1 ㎒ to 750㎒. By thickening a CoZrNb film relatively, magnetic permeability and impedance are examine to design the. MI sensor which drives at 50㎒, and thereof fabricated the MI sensor which drives at the 50㎒.
펠티어 소자를 사용한 Low Drift Flux Meter의 기초연구
김철한,허진,신광호,사공건,Kim, Chul-Han,Heo, Jin,Shin, kwang-Ho,Sa-Gong, Geon 한국전기전자재료학회 2001 전기전자재료학회논문지 Vol.14 No.11
Fluxmeter is a measuring instrument the magnetic flux intensity by means of an integration of the voltage induced to a search coil to unit time. It also is required to a precise integrator since the voltage induced to a search coil has a differential value of the flux ${\Phi}$ to unit time. In this study, a bias current which is a main problem of the integrator in a drift troublesome depending on the temperature of a FET is investigated. We have confirmed that the temperature dependence of both the bias current of a integrator using the FET and the reversal saturated current of the minor carrier in a P-N junction of a semiconductor were the same. The property of a commercial integrator goes rapidly down with increasing temperature. The bias current of a FET is increased twice as much with 10$^{\circ}C$ increment. As a result, the low drift integrator could be developed by setting the lower temperature up with a pottier device.