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Ar 플라즈마가 조사된 InP의 Photoreflectance 방법에 의한 표면상태 연구
김종수(Jong Su Kim),이정열(Jung-Yeul Lee),손정식(Jeong-Sik Son),배인호(In-Ho Bae),김인수(In-Soo Kim),김대년(Dae-Nyoun Kim) 한국진공학회(ASCT) 1999 Applied Science and Convergence Technology Vol.8 No.4(1)
Fe가 첨가된 반절연성 InP에 Ar 플라즈마를 조사하였을 때 시료의 표면상태를 photoreflectance(PR) 방법으로 연구하였다. Ar 플라즈마(30 W, 10 sec.)를 조사한 시료에서는 상온에서 1.336eV에서 새로운 피크(E_Ar)가 형성되었으며, 이는 V_In-V_P에 관련된 얕은 준위에 의한 신호이며, 표면광전압(surface photovoltage spectroscopy; SPV)에서 관측된 결과와 잘 일치하였다. 또한 Ar 플라즈마의 영향으로 시료의 표면에 P-vacancy가 형성되어 시료에 V_P와 관련된 얕은 준위(shallow level)가 형성되었다. 이는 시료의 표면 전기장 변화의 요인으로 작용하였다. The surface state of Ar plasma-exposed Fe doped SI-InP have been investigated by photoreflectance (PR). From Ar plasma-exposed InP with 30 W for 10 sec, the PR signals include a peak (E_Ar) that is located at 1.336 eV. We think that this peak was originated shallow level related to V_In-V_P. And we compared this level with the level obtained by surface photovoltage spectroscopy (SPV) measurement. The result of the PR agrees well with that from SPV. Additionally, Ar plasma induced phosphorus vacancy is related to shallow level. Therefore, the change of surface electric fields are attributed to the shallow level. This level is caused by the existence of phosphorus vacancy on InP surface.
분자선 에피탁시법으로 성장된 Al0.25Ga0.75As / In0.15Ga0.85As / GaAs 슈우도형 고 전자 이동도 트랜지스터 구조의 광학적 특성
이동율(Dong-Yul Lee),이철욱(Chul-Wook Lee),김기홍(Ki-Hong Kim),김종수(Jong-Su Kim),김동렬(Dong-Lyeul Kim),배인호(In-Ho Bae),전헌무(Hunmoo Jeon),김인수(In-Soo Kim) 한국진공학회(ASCT) 2000 Applied Science and Convergence Technology Vol.9 No.2
Photoluminescence(PL)와 photoreflectance(PR}를 이용하여 Al_(0.25)Ga_(0.75)As/In_(0.15)Ga_(0.85)As/GaAs 슈우도형 고 전자 이동도 트랜지스터 구조에 대한 특성을 조사 하였다. 온도 10 K의 PL 측정에서 InGaAs 양자우물에 의한 e2-h1 및 e2-h1 전이 피크가 각각 1.322 및 1.397 eV에서 관측되었다. 온도 의존성으로부터 첫번째 가전자 띠와 두번째 가전자 띠의 에너지 차이는 약 23 meV로 나타났다. 또한 300 K에서의 PR 측정으로 e2-h2 및 e2-h1 전이에 의한 피크를 관측하였고, 두번째 전도 띠의 에너지 준위에 의한 피크가 띠 채움으로 인해 첫번째 전도 띠의 에너지 준위에 의한 피크보다 상대적으로 우세하였다. 반면에 PL 측정에서는 전자 가리개 효과 때문에 첫번째 전도 띠에 의한 피크가 우세하였다. We have analyzed characteristics for the structure of Al_(0.25)Ga_(0.75)As / In_(0.15)Ga_(0.85)As/GaAs pseudo-morphic high electron mobility transistor (PHEMT) by photoluminescence (PL) and photoreflectance (PR) measurements. By the PL measurement at 10 K, we observed e1-h1 transition peak at 1.322 eV and e2-h1 transition peak at 1.397 eV in the InGaAs quantum well. We calculated value of 23 meV, the difference between the first energy level and the second energy level of a valence band by dependence of temperatures. Also, (e2-h2) transition signal was observed at 300 K by PR measurement. From the PR measurement, we recognized that the transition was dominated the second energy level of conduction band than the first energy level of conduction band due to band filling. The other hand, PL signal of the first energy level of conduction band was dominated because of the electron screening effect.
Metalloporphyrin으로 도핑된 폴리이미드의 광전사적 성질
이진국,배인호,김종수,김춘호,김휘성 釜山大學校生産技術硏究所 1998 生産技術硏究所論文集 Vol.55 No.-
본 연구에서는 ZnTPP와 MgTPP를 도우핑한 폴리이미드의 과악적 성질을 UV spectrum과 emission spectrum을 이용하여 조사하였다. Tetraphenylporphyrin-zinc (ZnTPP)와 Tetraphenyl-porphyrin-magnesium (MgTPP)는 전하이동현상을 보였다. 폴리이미드와 폴피린관련 자외흡수피크에서 red-shift를 관찰할 수 있었다. 이는 폴리이미드의 이미드와 폴피린에 포함된 금속 물질과의 전하이동착체의 형성때문으로 설명할 수 있다. In this research, we fabricated metalloporphyrin doped polymides(PI) and characterized them with ultraviolet spectrophotometer and emission spectrophotometer. Tetraphenylporphyrin-zinc-doped and Tetraphenylporphyrin-magnesium-doped PIs showed charge transfer phenomena. Red-shift was obseved in polyimide and porphyrin related bands at the same time. This phenomena can be explained that charge transfer complex(CTC) formed between imide group of PI and metal in the porphyrin.
Al_(0.24)Ga_(0.76)As/GaAs HEMT 구조에서의 표면 광전압에 관한 연구
유재인,김종수,배인호,신영남,박성배 대구대학교 기초과학연구소 2000 基礎科學硏究 Vol.16 No.2
We report a surface photovoltage(SPV) study of Al_(0.24)Ga_(0.76)As/GaAs HEMT structure grown by molecular beam epitaxy. The energies of Eo transition for GaAs and Al_(0.24)Ga_(0.76)As were 1.41 and 1.71 eV, respectively. These values were in good agreement with photo reflectance(PR) measurement. As the frequency is increased from 25 to 55 Hz, the intensity of SPV signal is gradually reduced. Meanwhille, the intensity of SPV signal gradually increased as the temperature increased from 100 K to room temperature. From the former, the surface photovoltage of Al_(0.24)Ga_(0.76)As layer is 8.61 mV, which is about 1.4 times smaller than that of GaAs. This is due to influence of carrier mobility.
이동건,김종수,손정식,배인호,문영희 嶺南大學校 基礎科學 硏究所 1998 基礎科學硏究 Vol.18 No.-
We have investigated the lattice relaxation and crystalline qualities of InGaAs/GaAs heterostructure as a function of the layer thickness. The ?? heteroepitaxial layers were grown by molecular beam epitaxy(MBE).The eqilayer thickness were from 230 Å to 3 ㎛ with composition around ×=0.15. The lattice constants c obtained using double axis diffractometry(DAD) as a function of the layer thickness were constant until 1000 Å. Change in lattice constant of surface normal appeared at the thickness of1200 Å, and it decreased as layer thickness increased. The relaxation of epilayers were from 32% at 1200 Å to 84% at 3 ㎛, and the crystalline qualities of epilayers with increased with increasing thickness.