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AZO 버퍼층을 이용한 ZnO/NiO 이종접합 금속 산화물 투명 광전소자 특성 향상
반동균(Dong-Kyun Ban),김은정(Eunjeong Kim),오정현(Junghyun Oh),김준동(Joondong Kim) 대한전기학회 2019 전기학회논문지 Vol.68 No.6
All transparent metal oxide photoelectric device was fabricated with structure of Ag nanowire/NiO/ZnO/AZO/FTO by magnetron sputtering system. In order to achieve p/n junction, p-type NiO was deposited onto the n-type ZnO layer. The AZO (Aluminium-doped zinc oxide) was applied as buffer layer for effective transport and collection of the photo-induced electrons. Under light illumination, electrons and holes are generated in the hetero-junction of p-type NiO and n-type ZnO. The AZO layer between ZnO and NiO layers induces the efficient carrier collection from the ZnO side to the negative electrode, due to the similar structure of AZO to ZnO. In addition, the AZO insertion layer is efficient to suppress the loss of hole carriers, resulting in the low leakage current value. The overall transparency of the Ag nanowire/NiO/ZnO/AZO/FTO device is about 70% for visible light range, and thus which can be applied in the invisible transparent electronics, including photodetectors and solar cells.
보행환경요소를 반영한 보행서비스수준 평가기준 개선에 관한 연구
반동인(BAN, Dong In),최병운(Byung Woon Choi),노정현(RHO, Jeong Hyun) 대한교통학회 2015 대한교통학회 학술대회지 Vol.72 No.-
본 연구는 보행환경요소를 반영한 보행로 서비스수준 평가모형 개선에 목적이 있다. 우선 보행만족도 데이터와 현행 보행서비스 수준 평가방식을 비교하여 KHCM의 보행LOS가 보행만족도를 설명하지 못함을 증명함으로써 현행 보행LOS평가방식 개선의 필요 성을 제시하였다. 서울시 상업가로 191개 지점의 보행여건 및 보행환경자료를 통해 보행만족도를 추정하는 모형을 구축하였으며, 해당 모형을 척도로 변환하여 새로운 보행 LOS 평가기준을 제시하였다. 주요 결과는 다음과 같다 첫째, 보행만족도는 5개 요인으로 설명되며, 통계적으로 유의하였다. 선택된 변수는 보행로너비, 보차분리여부, 보행밀도, 1층부 식음·판매비율, 나무그늘 수 등이다. 둘째, 변수 중 보행로너비와 보차분리여부가 보행만족도를 추정모형의 영향력이 가장 크다. 마지막으로 본 연구는 이용자의 만족도 를 반영하는 방향으로 기존의 W-LOS 개선방향을 제시하였다는데 의미를 가진다.
반동균,박왕희,은승완,김준동,Ban, Dong-Kyun,Park, Wang-Hee,Eun, Seong Wan,Kim, Joondong 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.6
NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.
MoS<sub>2</sub> 기반의 쇼트키 반도체 광전소자
반동균,박왕희,정복만,김준동,Ban, Dong-Kyun,Park, Wang-Hee,Jong, Bok-Mahn,Kim, Joondong 한국전기전자재료학회 2017 전기전자재료학회논문지 Vol.30 No.7
A high-performing photoelectric device was realized for the $MoS_2$-embedded Si device. $MoS_2$-coating was performed by an available large-scale sputtering method. The $MoS_2$-layer coating on the p-Si spontaneously provides the rectifying current flow with a significant rectifying ratio of 617. Moreover, the highly optical transmittance of the $MoS_2$-layer provides over 80% transmittance for broad wavelengths. The $MoS_2$-embedded Si photodetector shows the sensitive photo-response for middle and long-wavelength photons due to the functional $MoS_2$-layer, which resolves the conventional limit of Si for long wavelength detection. The functional design of $MoS_2$-layer would provide a promising route for enhanced photoelectric devices, including photovoltaic cells and photodetectors.
박왕희,반동균,김현기,김홍식,유정희,김준동,Park, Wang-Hee,Ban, Dong-Kyun,Kim, Hyunki,Kim, Hong-Sik,Patel, Malkeshkumar,Yoo, Jeong Hee,Kim, Joondong 한국전기전자재료학회 2016 전기전자재료학회논문지 Vol.29 No.7
Transparent UV photodetector was achieved by using wide bandgap metal oxide materials. In order to realize transparent heterojunction UV photodetector, n-type ZnO and p-type NiO metal oxide materials were employed. High light-absorbing SnS layer was inserted into the n-ZnO and p-NiO layers. High-performing UV photodetector was realized by ZnO/SnS/NiO/ITO structures to provide extremely fast response times (Fall time: $7{\mu}s$ and rise time: $13{\mu}s$) and high rectifying ratio. The use of functional SnS-embedded photodetector would provide a route for high functional photoelectric devices.
원자층 증착 ZnO/은나노와이어를 이용한 투명 UV 광 검출기
노민수(Min-Soo Roh),반동균(Dong-kyun Ban),박주연(Ju-Yeon Park),김준동(Joondong Kim) 대한전기학회 2019 전기학회논문지 Vol.68 No.9
The highly transparent UV Photodetector was realized by metal oxide layers by using magnetron sputtering system and ALD system. Device is consisted of p-n junction by p-NiO and n-TiO₂. In addition, transmittance reaches near by 50% of value to guarantee the optical view to the human eyes. In order to improve the performance of UV Photodetector, the ALD ZnO layer was applied between NiO and TiO₂. By embedding the thin ZnO layer by ALD process, the surface of defects of TiO₂ can be relieved, resulting in the significant suppression of the leakage current. The electrically conductive and optically transparent silver nanowires (AgNWs) were coated onto the top layer, working to the hole transport layer (HTL), which is definitely advantageous for improving photocurrent value. The functional uses, ZnO layer of leakage current suppression and AgNWs of photocurrent enhancement, induce the great improve of the transparent UV photodetector performance for quick photo-responses (rise time: 0.98 ㎳, fall time: 1.59 ㎳) with high responsivity. This finding of functional use of ALD ZnO and AgNWs may provide a route for high-efficient photoelectric devices, including solar cells and photodetectors.