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원자층 증착 ZnO/은나노와이어를 이용한 투명 UV 광 검출기
노민수(Min-Soo Roh),반동균(Dong-kyun Ban),박주연(Ju-Yeon Park),김준동(Joondong Kim) 대한전기학회 2019 전기학회논문지 Vol.68 No.9
The highly transparent UV Photodetector was realized by metal oxide layers by using magnetron sputtering system and ALD system. Device is consisted of p-n junction by p-NiO and n-TiO₂. In addition, transmittance reaches near by 50% of value to guarantee the optical view to the human eyes. In order to improve the performance of UV Photodetector, the ALD ZnO layer was applied between NiO and TiO₂. By embedding the thin ZnO layer by ALD process, the surface of defects of TiO₂ can be relieved, resulting in the significant suppression of the leakage current. The electrically conductive and optically transparent silver nanowires (AgNWs) were coated onto the top layer, working to the hole transport layer (HTL), which is definitely advantageous for improving photocurrent value. The functional uses, ZnO layer of leakage current suppression and AgNWs of photocurrent enhancement, induce the great improve of the transparent UV photodetector performance for quick photo-responses (rise time: 0.98 ㎳, fall time: 1.59 ㎳) with high responsivity. This finding of functional use of ALD ZnO and AgNWs may provide a route for high-efficient photoelectric devices, including solar cells and photodetectors.