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Vampire를 이용한 경부고속철도 차량의 동적 안정성 해석
박찬경(Park Chan-Kyoung),김기환(Kim Ki-Hwan),홍진완(Hong Jin-Wan),심태웅(Shim Tai-Woong) 한국철도학회 1998 한국철도학회 학술발표대회논문집 Vol.- No.-
Dynamic stability of a high speed train is very important. This paper presents a dynamic stability analysis of K-TGV using Vampire Program. The analysis of stability on this paper is performed in condition of track irregularity, curved track and strong gust. The critical speed of K-TGV is 140㎧, and it is stable when runs on 7000R(cant 150㎜) curved track and on linear track with the body exerted 101kN lateral impulse force.
$\textrm{RuO}_2$ 박막의 산소 분위기 열처리시 열적 안정성에 관한 연구
오상호,박찬경,백홍구,O, Sang-Ho,Park, Chan-Gyeong,Baek, Hong-Gu 한국재료학회 1998 한국재료학회지 Vol.8 No.12
Rf 마그네트론 반응성 스퍼터링법으로 $RuO_2$박막을 Si 및 Ru/Si 기판 위에 증착한 뒤 산소 분위기 (1atm)에서 열처리를 하여 RuO$_2$박막의 열적 안정성 및 확산방지 특성을 연구하였다.$ RuO_2$박막은 산소 분위기 $700^{\circ}C$에서 10분까지 안정하여, 산소와 실리콘에 대한 우수한 확산방지 특성을 나타내었다 $750^{\circ}C$ 열처리시, 우선 성장 방위에 관계없이 RuO$_2$박막 표면 및 내부에서 휘발 반응이 일어남과 동시에 확산방지 특성은 저하되었다. 그러나 80$0^{\circ}C$ 열처리 시에는 $750^{\circ}C$ 열처리와는 다른 미세구조를 나타내었다. 이러한 열처리 온도에 따른 휘발반응에는 RuO$_2$의 표면 결함구조인 $RuO_3$와 증착시 박막내 함유된 과잉산소에 의한 결함 구조가 영향을 주는 것으로 판단된다. $RuO_2$ thin films were deposited on Si and Ru/Si substrates by rf magnetron reactive sputtering and annealed in oxygen atmosphere(1atm) to investigate their thermal stability and diffusion barrier property. $RuO_2$ thin films were thermally stable up to 700\ulcorner for 10min. in oxygen atmosphere and showed excellent barrier property against the interdiffusion of silicon and oxygen. After annealing at $750^{\circ}C$ , however, volatilization to higher oxide occurred at the surface and inside of $RuO_2$ thin film and diffusion barrier property was also deteriorated. When annealed at $800^{\circ}C$, $RuO_2$thin film showed a different microstructure from that of $RuO_2$ thin film annealed at 75$0^{\circ}C$. It is likely that surface defect structure of $RuO_2$, $RuO_3$, and excess oxygen had an influence on the mode of volatilization with increasing annealing temperature.
Co/GaAs계의 계면반응, 상평형 밑 전기적 특성에 관한 연구
곽준섭,백홍구,신동원,박찬경,김창수,노삼규,Gwak, Jun-Seop,Baek, Hong-Gu,Sin, Dong-Won,Park, Chan-Gyeong,Kim, Chang-Su,No, Sam-Gyu 한국재료학회 1995 한국재료학회지 Vol.5 No.5
Interfacial reactions, phase equilibria and elecrrical properties of Co films on (001) oreinted GaAs substrate, in the temperature range 300-$700^{\circ}C$ for 30min. have been investigated using x-ray diffraction and Augger electron spectropcopy. Cobalt started to react with GaAs at 38$0^{\circ}C$ by formation of Co$_{2}$GaAs phase. At 42$0^{\circ}C$, CoGa and CpAs nucleated at the Co and Co$_{2}$GaAs interface and grew with Co$_{2}$GaAs upto 46$0^{\circ}C$. contacts produced in this annealing regime were rectifying and Schottky varrier heights increased from 0.688eV(as-deposite state) up to 0.72eV(42$0^{\circ}C$). In the subsequent reation, the ternary phase started to decompose and lost stoichiometry at 50$0^{\circ}C$. At higher temperature, Co$_{2}$GaAs disappered and CoGa/CoAs/GaAs layer structures were formed. Contacts produced at higher temperature regime(>50$0^{\circ}C$) showed very low effective barriers. The results of interfacial reactions can be understood from the Co-Ga-As ternary phase diagram.