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박종명,황의경,김인천,이재진,정현규,강구환,Park, Jong-myung,Hwang, Eui-kyung,Kim, In-cheon,Rhee, Jae-chin,Chung, Hyun-kyu,Kang, Ku-hwan 대한수의학회 1998 大韓獸醫學會誌 Vol.38 No.1
Piglets' diarrhea is one of the major causes of economic loss in Korean swine industry. To prevent this serious and persistant problem, we have developed systemic farm evaluation and analysis program. The program consists of the checklist and the computerized program. The items of the checklist are selected on the basis of various causative factors related with the piglets' diarrhea including sanitational status, nutritional management, or farm environment. The checklist is composed of 30 items including 6 factors on facility, 8 factors on environment, 6 factors on nutrition and 10 factors on sanitation, respectively. Minimum 1 to maximum 10 points was assigned to each item depending on level or status of farm. The scores calculated by sum of points obtained from each item could find out the problems which the farm was confronted with. To investigate the applicability of a program 150 swine farms raising over 500 heads were selected from 7 provinces throughout the country and surveyed. There were significant correlations between the piglets' diarrhea and the scores of the checklist. Based on above results we revised the checklist which consisted of 22 items including 5 factors on facility, 7 factors on environment, 3 factors on nutrition and 7 factors on sanitation. After that we composed a computerized diagram out of each point of an item which showed and indicated weak factors to be improved promptly. Our present study suggested that this newly established swine farm evaluation program would be a very efficient way to find out the problems and support the systemic control program of the piglets' diarrhea for swine farms.
Cu-Cu 패턴 직접접합을 위한 습식 용액에 따른 Cu 표면 식각 특성 평가
박종명,김영래,김성동,김재원,박영배,Park, Jong-Myeong,Kim, Yeong-Rae,Kim, Sung-Dong,Kim, Jae-Won,Park, Young-Bae 한국마이크로전자및패키징학회 2012 마이크로전자 및 패키징학회지 Vol.19 No.1
Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다. Three-dimensional integrated circuit(3D IC) technology has become increasingly important due to the demand for high system performance and functionality. In this work, BOE and HF wet etching of Cu line surfaces after CMP were conducted for Cu-Cu pattern direct bonding. Step height of Cu and $SiO_2$ as well as Cu dishing after Cu CMP were analyzed by the 3D-Profiler. Step height increased and Cu dishing decreased with increasing BOE and HF wet etching times. XPS analysis of Cu surface revealed that Cu surface oxide layer was partially removed by BOE and HF wet etching treatment. BOE treatment showed not only the effective $SiO_2$ etching but also reduced dishing and Cu surface oxide rather than HF treatment, which can be used as an meaningful process data for reliable Cu-Cu pattern bonding characteristics.