http://chineseinput.net/에서 pinyin(병음)방식으로 중국어를 변환할 수 있습니다.
변환된 중국어를 복사하여 사용하시면 됩니다.
상온 및 액체질소 온도에서 고속 중성자 조사된 원자로 압력 용기의 취화 현상에 관한 연구
김형배(H. B. Kim),김형상(H. S. Kim),김순구(S. K. Kim),신동훈(D. H. Shin),유연봉(Y. B. Yu),고정대(J. D. Ko) 한국자기학회 2005 韓國磁氣學會誌 Vol.15 No.2
The embrittlement of fast neutron-irradiated reactor pressure vessel (RPV) steels was investigated by X-ray diffraction patterns at room temperature and Mossbauer spectroscopy at room- and liquid nitrogen-temperature. Neutron fluence on the samples were 10¹², 10¹³, 10¹⁴, 10^(15), 10^(16), 10^(17), 10^(18) n/㎠. The X-ray diffraction patterns showed that the structure of the neutron unirradiated sample was bcc type, where as but the neutron irradiated samples with the fluence higher than 1017 n/㎠ were so severely damaged, that bcc type structure disappeared. The Mossbauer spectra of all samples showed superposition of two or more sextets. In this paper all Mossbauer spectra were fitted by three set of sextet. The isomer shift and quadrupole splitting values were found around zero. At liquid nitrogen temperature, magnetic hyperfine field and absorption area increase rapidly S1 sextet in the samples of 1017~1018 n/㎠ neutron fluences. And at room temperature, magnetic hyperfine field and absorption increased rapidly at S1 sextet in the samples of 1017~1018 n/㎠ neutron fluences. This rapid increase of magnetic hyperfine field and absorption area were inferred to be caused by the change of (56)^Fe, (55)^Mn into (57)^Fe due to by neutron irradiation.
100 ㎚ T-gate의 InGaAs/InAlAs/GaAs metamorphic HEMT 소자 제작 및 특성에 관한 연구
김형상(H. S. Kim),신동훈(D. H. Shin),김순구(S. K. Kim),김형배(H. B. Kim),임현식(Hyunsik Im),김현정(H. J. Kim) 한국진공학회(ASCT) 2006 Applied Science and Convergence Technology Vol.15 No.6
본 논문에서는 100 ㎚ 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/ PMMA 3층 구조의 레지스터와 게이트 길이 100 ㎚인 T-게이트를 제작하였다. 게이트의 단위 폭이 70 m인 2개의 게이트와 길이가 100 ㎚로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 ㎃/㎜, 상호전달 컨덕턴스는 844 mS/㎜이, RF 측정으로부터 전류 이득 차단 주파수는 192 ㎓와 최대 진동주파수 310 ㎓인 특성을 보였다. We present the DC and RF characteristics of 100 ㎚ gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 ㎚ foot print by using a positive resist ZEP520/P(MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 ㎚ MHEMT with a 70 ㎛ unit gate width and two fingers were characterized through dc and rf measurements. The maximum drain current density of 465 ㎃/㎜ and extrinsic transconductance (gm) of 844 mS/㎜ were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency (fT) of 192 ㎓, and maximum oscillation frequency (fmax) 310 ㎓.
100 nm T-gate의 InGaAs/InAlAs/GaAs metamorphic HEMT 소자 제작 및 특성에 관한 연구
김형상,신동훈,김순구,김형배,임현식,김현정,Kim, H.S.,Shin, D.H.,Kim, S.K.,Kim, H.B.,Im, Hyun-Sik,Kim, H.J. 한국진공학회 2006 Applied Science and Convergence Technology Vol.15 No.6
본 논문에서는 100 nm 게이트 길이를 갖는 InGaAs/InAlAs/GaAs MHEMT(metamorphic high electron mobility transistors)m의 DC와 RF 특성을 분석 하였다. 이중 노광 방법으로 ZEP520/P(MMA-MAA)/PMMA 3층 구조의 레지스터와 게이트 길이 100 nm인 게이트를 제작하였다. 게이트의 단위 폭이 $70\;{\mu}m$인 2개의 게이트와 길이가 100 nm로 제작된 MHEMT를 DC 및 RF특성을 조사하였다. 최대 드레인 전류 밀도는 465 mA/mm, 상호전달 컨덕턴스는 844 mS/mm이, RF 측정으로부터 전류 이득 차단 주파수는 192 GHz와 최대 진동주파수 310 GHz인 특성을 보였다. We present the DC and RF characteristics of 100 nm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). We fabricated the T-gate with 100 nm foot print by using a positive resist ZEP520/P (MMA-MAA)/PMMA trilayer by double exposure method. The fabricated 100 nm MHEMT with a $70\;{\mu}m$ unit gate width and two fingers were characterized through do and rf measurements. The maximum drain current density of 465 mA/mm and extrinsic transconductance $(g_m)$ of 844 mS/mm were obtained with our devices. From rf measurements, we obtained the current gain cut-off frequency $(f_T)$ of 192 GHz, and maximum oscillation frequency $(f_{max})$ 310 GHz.