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김건호,B.S. Kim,C.S. Wi,G. Kim,이종덕,J.J. Lee,강정수,K.J. Kim,S.S. Lee,한상욱 한국물리학회 2006 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.48 No.5I
The initial stage of interface formation at Mn/Si at room temperature (RT) and the growth of manganese silicide were studied by using photoemission spectroscopy (PES) and X-ray absorption spectroscopy with synchrotron radiation. The Mn coverage dependence of the relative intensities of the Si 2p and the Mn 3p core-level PES spectra revealed that the growth of Mn on Si(111)-7×7 at RT started in a layer-by-layer growth at a coverage of less than 0.5 ML. The line shape of Mn 3p XAS spectra also showed no reaction between Mn and Si at RT. The valence-band PES spectra of the three manganese-silicide samples, MSS, MSH, and MSP, showed the same metallic emission. The different line shapes of the Si 2p core-level and valence-band spectra of MSS and MSP compared to those of MSR originate from a Si overlayer on the silicide surface.