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Sung‑Eun Kim,Jin-Gyu Lee,In-Young Choi,Ha-Eun Kim,Hong-Sub Lee 한국세라믹학회 2020 한국세라믹학회지 Vol.57 No.1
Sneak current is one of the main bottlenecks for dense crossbar array resistive random access memory. This study reports highly non-linear resistive switching characteristic from Ce0.9Y0.1O2/ TiO2 bi-layer (1S/1R device) structure, fabricated by photochemical metal-organic deposition, as a solution for sneak current issue. Ce0.9Y0.1O2 material, possessing oxygen vacancies, was used as a potential barrier as well as oxygen reservoir which rectified the current of low resistance state without an electrical breakdown in 1S/1R device. TiO2 was adopted for resistive switching property, and TiO2 layer having mixed phase (anatase and brookite) showed typical diode switching behavior. The photochemical reaction of photochemical metal-organic deposition process and phase formation were monitored and established using by Fourier-transform infrared spectroscopy and X-ray diffraction, respectively. The 1S/1R device showed highly non-linear resistive switching characteristic, large on/ off ratio of above three orders of magnitude with low operating current.
이상규(Lee, Sang-gyu) 동아인문학회 2017 동아인문학 Vol.39 No.-
글은 이상정의 생애와 업적을 살펴보고, 그가 남긴 유고집의 의미와 사료적 가치를 조망하는 것을 목적으로 한다. 자료의 한계로 인해 그 전모 전체를 밝히기에는 어려움이 있지만 본 논의의 의미는 다음과 같이 정리할 수 있다. 이상정의 조국 독립군으로서의 활동을 살펴볼 수 있었고, 우리나라 최초의 여유 비행사였던 권기옥의 독립투쟁사를 밝힐 수 있었다. 뿐만 아니라 동북아시아 특히 한・중의 과거 관계를 알 수 있는 역사 사료로서의 가치를 발견할 수 있었다. 우리나라 고대사의 흐름을 제대로 이해하기 위해서는 동북 지역사에 대한 새로운 인식이 필요하다. 책의 내용을 보면 중국 동북삼성뿐만 아니라 곳곳의 유적지를 답사하며 고적과 유물의 역사와 유래에 대한 글을 남기고 있기 때문이다. 또한 『개벽(開闢)』 잡지 등에 그가 남긴 여러 편의 시조를 살펴보면 문예가로서의 면모도 발견할 수 있는데, 유고집에 남긴 이러한 글들은 문예집으로서도 가치를 지닌다고 할 수 있다. The purpose of this paper is to examine the life and achievements of General Lee Sang-jeong and identify the meaning and historical value of posthumous collection he left. Although there are difficulties in clarifying the full account due to the limitations of data, the significance of this paper can be summarized as follows. It could examine the activities of General Lee Sang-jeong as an army for national independence, and clarify the struggles for independence by Kwon Ki-ok, the first female pilot in Korea. Moreover, this paper could discover values as a historical record to know the past relationship in Northeast Asia, especially Korea and China. It is necessary to have a new recognition of the regional history of Northeast Asia to properly understand the flow of the ancient Korean history. By exploring historical sites in the 3 provinces of Northeast China as well as various places, the book leaves many writings about the history and origins of historical remains and sites, whose quality surpasses that of the writings by renowned, excellent historical scholars. Also, several sijo (Korean traditional three-verse Korean poems) in magazines such as ‘Gaebyeok’ show General Lee Sang-jeong’s talent as a literary artist, indicating the significant value of the pieces he left in his posthumous collection as a literary collection.
( Hee Yeon Kim ),( Jong Young Choi ),( Dong Goo Kim ),( Myoung Soo Kim ),( Soon Il Kim ),( Shin Hwang ),( Sung Gyu Lee ),( Kwang Woong Lee ),( Kyung Suk Suh ),( Young Seok Han ),( Dong Lak Choi ),( Se 대한간학회 2012 춘·추계 학술대회 (KASL) Vol.2012 No.-
Background: The outcome of hepatitis B virus (HBV) infection after liver transplantation (LT) was improved by hepatitis B immunoglobulin (HBIG) and nucles(t)ide analogue (NUA). However, HBV recurrence after LT is critical because the recurrence is occasionally accompanied by a progressive destruction of graft and poor survival. The aims of this study were to investigate the significance HBV recurrence and identity factors associated with HBV recurrence. Methods: From October 1999 to February 2011, a total of 2684 consecutive LT recipients who underwent HBV-associated LT were retrospectively enrolled from 7 transplantation centers in Korea. Results: Prophylaxis regimens were HBIG monotherapy (67.7%) or a combination of HBIG with NUA (22.3%). The recurrence rate of HBV was 6.1% (164 recipients) during mean follow-up duration of 10.9 years. The median time from transplantation to recurrence was 2.1 years (0.1-7.9 years). Of the 1,071 patients with hepatocellular carcinoma (HCC) prior to LT, 155 patients (14.5%) had HCC recurrence after transplantation, and 48 patients (31.0%) had HBV recurrence. Of the 48 patients with recurrence of both HBV and HCC, 25 patients (52.1%) experienced HBV recurrence after HCC recurrence. In the multivariate analysis, pretransplant HCC, pretransplant HBV DNA above 5.5 log copies/mL was independent clinical factors influencing HBV recurrence after LT. The mortality rate among the recipients with HBV recurrence was 34.1% (56 recipients). Mean overall survival was 6.4 years in the HBV-recurrence group and 9.9 years in the HBV-nonrecurrence group (p<0.001). HBV recurrence was not an independent prognostic factor for overall survival. HCC recurrence was the most important factor for overall survival. Conclusions: The overall outcome of LT in HBV-related liver disease was excellent with the current prophylaxis regimen Choon Hyuck David Kwon,8 Suk-Koo Lee8 Pretransplant HBV DNA and HCC were important factors for HBV recurrence. HBV recurrence after LT did not significantly influence on the overall survival without combining of HCC recurrence.
Chemical Modification of Bovine Brain Succinic Semialdehyde Reductase by Diethylpyrocarbonate
Lee, Byung-Ryong,Jeon, Seong-Gyu,Bahn, Jae-Hoon,Choi, Kyung-Soon,Yoon, Byung-Hak,Ahn, Yoon-Kyung,Choi, Eun-A,Lee, Kil-Soo,Cho, Sung-Woo,Choi, Soo-Young Korean Society for Biochemistry and Molecular Biol 1999 Journal of biochemistry and molecular biology Vol.32 No.3
The NADPH-dependent succinic semialdehyde reductase is one of the key enzymes in the brain GABA shunt, and it catalyzes the formation of the neuromodulator $\gamma$-hydroxybutyrate from succinic semi aldehyde. This enzyme was inactivated by diethylpyrocarbonate (DEP) with the second-order rate constant of $1.1{\times}10^3\;M^{-1}min^{-1}$ at pH 7.0, $25^{\circ}C$, showing a concomitant increase in absorbance at 242 nm due to the formation of N-carbethoxyhistidyl derivatives. Complete inactivation of succinic semialdehyde reductase required the modification of five histidyl residues per molecule of enzyme. However, only one residue was calculated to be essential for enzyme activity by a statistical analysis of the residual enzyme activity. The inactivation of the enzyme by DEP was prevented by preincubation of the enzyme with the coenzyme NADPH but not with the substrate succinic semialdehyde. These results suggest that an essential histidyl residue involved in the catalytic activity is located at or near the coenzyme binding site of the brain succinic semialdehyde reductase.
Lee, Taek Joon,Chang, Cha-Wen,Hahm, Suk Gyu,Kim, Kyungtae,Park, Samdae,Kim, Dong Min,Kim, Jinchul,Kwon, Won-Sang,Liou, Guey-Sheng,Ree, Moonhor IOP Pub 2009 Nanotechnology Vol.20 No.13
<P>We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(<I>N</I>-(<I>N</I>′,<I>N</I>′-diphenyl-<I>N</I>′-1,4-phenyl)-<I>N</I>,<I>N</I>-4,4′-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 × 10<SUP>−13</SUP>–1.0 × 10<SUP>−14</SUP> S cm<SUP>−1</SUP>. The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices’ ON/OFF current ratio is high, up to 10<SUP>10</SUP>. Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10<SUP>11</SUP>. The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices. </P>