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Real-Time Vision-Based Localization of Planar Cable-Driven Parallel Robot
Muhammad Awais,Jae-Hyun Park,Jinwoo Jung,Eun-Pyo Choi,Jong-Oh Park,Chang-Sei Kim 제어로봇시스템학회 2018 제어로봇시스템학회 국제학술대회 논문집 Vol.2018 No.10
Cable-driven parallel robot (CDPR) is a special class of parallel manipulators where the motion of end-effector (EE) is controlled by flexible cables attached to it. In industrial robotics field, CDPRs have quite a high usability. Recently, kinematics and dynamics of CDPRs have been analyzed intensively. But still, there is a problem in identification of position and orientation which need to be researched. In this study, we developed a real-time vision-based localization technique for EE of planar CDPR. We developed a robust algorithm which includes camera calibration and real-time monitoring of a visual marker. A planar CDPR with two translation and one rotation parameters used for proving ground. The results prove the reliability of developed vision system.
Muhammad Naeem Awais,최경현 대한금속·재료학회 2014 ELECTRONIC MATERIALS LETTERS Vol.10 No.3
The paper reported the fabrication of full organic resistive switch (FORS) with the sandwich structure of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS)/poly(4-vinylphenol)(PVP)/poly(3,4- ethylenedioxythiophene):poly(styrenesulfonate)(PEDOT:PSS). The fabricated FORS elucidated reversible bipolar resistive switching behavior at higher operational voltage between −20 V and +30 V. The switching mechanism in the FORS device was attributed to the hole injection through PEDOT:PSS electrode and filling of trap sites in the PVP sandwiched layer by the limited injection. Current conduction mechanisms were concluded and supported by the charge transport governing physical laws. The dominant current conduction mechanism in the fabricated FORS was attributed to the transition from trap-limited space charge limited current (SCLC) conduction to trap-free SCLC conduction mechanism. The robustness of the fabricated FORS was tested over 100 multiple voltage sweeps.
Patterning of Ag Electrode for the Printed Memristor through Electrohydrodynamic Printing Technique
Muhammad Naeem Awais,Yang Hui Doh,Dong Soo Kim,Kyung Hyun Choi 한국생산제조학회 2011 한국생산제조시스템학회 학술발표대회 논문집 Vol.2011 No.4
Memristor has evolved as a potential contender for nonvolatile memory applications in recent years. Nevertheless, memristive systems have proved as a prospective candidate in neural networks, logic and computational processes. The electrical switching behavior is induced by engineering the device with two different barriers: schottky barrier and ohmic barrier. This mechanism can be accomplished by placing the switching material between two metals so forming Metal?Insulator?Metal (MIM) structure and induce an electroforming process by applying voltage at both the metal electrodes of MIM structure. In this brief the deposition of metal electrode for the printed memristor through Electrohydrodynamic Printing (EHDP) technique has been demonstrated. The results reveal the successful patterning of Ag metal electrode for the missing fourth circuit element, memristor. The conductivity of the Ag deposited layer through EHDP technology for the newly born has been demonstrated.
Muhammad Naeem Awais,Muhammad Naeem Shehzad 한국물리학회 2019 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.75 No.5
The prediction of the current-voltage (IV) characteristics of resistive switching devices has remained a challenge before their physical realization. This research work addresses the prediction of the IV characteristics and the bipolar switching mechanism of polymer-based resistive switches by examining their structures before their fabrication. The research was carried out through an analytical study of the device structure, thereby correlating the predicted IV curve to the \textit{in-situ} IV characteristics of the device. Different types of the device structures were considered, depending upon the work function of the top and the bottom electrodes and the highest occupied molecular orbital (HOMO) and the lowest unoccupied molecular orbital (LUMO) levels of the sandwiched layer. We concluded that the defects/traps within the sandwiched layer lead to the interface effect being the dominant switching mechanism driving the polymer-based resistive switches. Furthermore, we also found that the devices following the interface effect are driven from trap-limited space-charge-limited current (SCLC) conduction to trap-free SCLC conduction as their current conduction mechanisms.