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Yo Kubota,Satoshi Tanabe,Mizutomo Azuma,Kazue Horio,Yoshiki Fujiyama,Takafumi Soeno,Yasuaki Furue,Takuya Wada,Akinori Watanabe,Kenji Ishido,Chikatoshi Katada,Keishi Yamashita,Wasaburo Koizumi,Chika Ku 대한위암학회 2021 Journal of gastric cancer Vol.21 No.4
Purpose: Promoter DNA methylation of various genes has been associated with metachronous gastric cancer (MGC). The cancer-specific methylation gene, cysteine dioxygenase type 1 (CDO1), has been implicated in the occurrence of residual gastric cancer. We evaluated whether DNA methylation of CDO1 could be a predictive biomarker of MGC using specimens of MGC developing on scars after endoscopic submucosal dissection (ESD). Materials and Methods: CDO1 methylation values (TaqMeth values) were compared between 33 patients with early gastric cancer (EGC) with no confirmed metachronous lesions at >3 years after ESD (non-MGC: nMGC group) and 11 patients with MGC developing on scars after ESD (MGCSE groups: EGC at the first ESD [MGCSE-1 group], EGC at the second ESD for treating MGC developing on scars after ESD [MGCSE-2 group]). Each EGC specimen was measured at five locations (at tumor [T] and the 4-point tumor-adjacent noncancerous mucosa [TAM]). Results: In the nMGC group, the TaqMeth values for T were significantly higher than that for TAM (P=0.0006). In the MGCSE groups, TAM (MGCSE-1) exhibited significantly higher TaqMeth values than TAM (nMGC) (P<0.0001) and TAM (MGCSE-2) (P=0.0041), suggesting that TAM (MGCSE-1) exhibited CDO1 hypermethylation similar to T (P=0.3638). The area under the curve for discriminating the highest TaqMeth value of TAM (MGCSE-1) from that of TAM (nMGC) was 0.81, and using the cut-off value of 43.4, CDO1 hypermethylation effectively enriched the MGCSE groups (P<0.0001). Conclusions: CDO1 hypermethylation has been implicated in the occurrence of MGC, suggesting its potential as a promising MGC predictor.
( Yohei Morifuji ),( Kenji Kubota ),( Shiro Tanaka ),( Akira Jomori ),( Atsuyoshi Jomori ) 대한지질공학회 2019 대한지질공학회 학술발표회논문집 Vol.2019 No.2
Slope failures due to heavy rain and earthquakes have occurred frequently in Japan. To evaluate the risk of slope failures, it is necessary to survey the subsurface structure and identify areas having risk of collapses. However, much time and labor is associated with conducting surveys on slopes, and the range of the survey area is often limited. Therefore, in this study, the grounded electrical source airborne transient electromagnetic system using a drone (D-GREATEM) was applied to a slope to reveal the resistivity structure which is an index of the rock geological features and the groundwater level. To avoid fall accidents, the drone flied at several constant elevations. Although the distance between the platform and the ground should be constant for analysis, it is difficult to maintain a specific flight height from the ground on a slope. This problem was approached by correcting the flight height in the analysis. To evaluate the resistivity results, a ground electrical survey was also conducted. The resistivity structure obtained from the electromagnetic survey conducted using the drone showed three layers of resistivity: a higher resistivity zone at depths shallower than 30 m, a lower resistivity zone from 50-100 m, and a higher resistivity zone at greater depth. The shallowest higher resistivity zone indicates the detritus and talus deposit distributed near the surface. The ground electrical survey also showed a higher resistivity zone in the area. The electromagnetic survey conducted using the drone could easily obtain the resistivity structure in the slope.
Electroded avalanche amorphous selenium (a-Se) photosensor
Oleksandr Bubon,Giovanni DeCrescenzo,Wei Zhao,Yuji Ohkawa,Kazunori Miyakawa,Tomoki Matsubara,Kenji Kikuchi,Kenkichi Tanioka,Misao Kubota,John A. Rowlands,Alla Reznik 한국물리학회 2012 Current Applied Physics Vol.12 No.3
Although avalanche amorphous selenium (a-Se) is a very promising photoconductor for a variety of imaging applications, it is currently restricted to applications with electron beam readout in vacuum pick-up tube called a High-gain Avalanche Rushing Photoconductor (HARP). The electron beam readout is compatible with high definition television (HDTV) applications, but for use in solid-state medical imaging devices it should be replaced by an electronic readout with a two-dimensional array of metal pixel electrodes. However, due to the high electric field required for avalanche multiplication, it is a technological challenge to avoid possible dielectric breakdown at the edges, where electric field experiences local enhancement. It has been shown recently that this problem can be overcome by the use of a Resistive Interface Layer (RIL) deposited between a-Se and the metal electrode, however, at that time, at a sacrifice in transport properties. Here we show that optimization of RIL deposition technique allows for electroded avalanche a-Se with transport properties and time performance previously not achievable with any other a-Se structures. We have demonstrated this by detailed analysis of transport properties performed by Time-of-Flight (TOF)technique. Our results showed that a stable gain of 200 is reached at 104 V/mm for a 15-mm thick a-Se layer, which is the maximum theoretical gain for this thickness. We conclude that RIL is an enabling technology for practical implementation of solid-state avalanche a-Se image sensors. Although avalanche amorphous selenium (a-Se) is a very promising photoconductor for a variety of imaging applications, it is currently restricted to applications with electron beam readout in vacuum pick-up tube called a High-gain Avalanche Rushing Photoconductor (HARP). The electron beam readout is compatible with high definition television (HDTV) applications, but for use in solid-state medical imaging devices it should be replaced by an electronic readout with a two-dimensional array of metal pixel electrodes. However, due to the high electric field required for avalanche multiplication, it is a technological challenge to avoid possible dielectric breakdown at the edges, where electric field experiences local enhancement. It has been shown recently that this problem can be overcome by the use of a Resistive Interface Layer (RIL) deposited between a-Se and the metal electrode, however, at that time, at a sacrifice in transport properties. Here we show that optimization of RIL deposition technique allows for electroded avalanche a-Se with transport properties and time performance previously not achievable with any other a-Se structures. We have demonstrated this by detailed analysis of transport properties performed by Time-of-Flight (TOF)technique. Our results showed that a stable gain of 200 is reached at 104 V/mm for a 15-mm thick a-Se layer, which is the maximum theoretical gain for this thickness. We conclude that RIL is an enabling technology for practical implementation of solid-state avalanche a-Se image sensors.