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A Triple-Band Transceiver Module for 2.3/2.5/3.5 GHz Mobile WiMAX Applications
Yeonsu Jang,Sungchan Kang,Young-Eil Kim,Jongryul Lee,Jae-Hoon Yi,Kukjin Chun 대한전자공학회 2011 Journal of semiconductor technology and science Vol.11 No.4
A triple-band transceiver module for 2.3/2.5/3.5 GHz mobile WiMAX, IEEE 802.16e, applications is introduced. The suggested transceiver module consists of RFIC, reconfigurable/multiresonance MIMO antenna, embedded PCB, mobile WiMAX base band, memory and channel selection front-end module. The RFIC is fabricated in 0.13μm RF CMOS process and has 3.5 dB noise figure(NF) of receiver and 1 dBm maximum power of transmitter with 68-pin QFN package, 8 × 8 ㎟ area. The area reduction of transceiver module is achieved by using embedded PCB which decreases area by 9% of the area of transceiver module with normal PCB. The developed triple-band mobile WiMAX transceiver module is tested by performing radio conformance test(RCT) and measuring carrier to interference plus noise ratio (CINR) and received signal strength indication (RSSI) in each 2.3/2.5/3.5 GHz frequency.
UVB Induces HIF-1α-Dependent TSLP Expression via the JNK and ERK Pathways
Jang, Yeonsue,Jeong, Sang H,Park, Yoon-Hee,Bae, Hyun C,Lee, Hana,Ryu, Woo-In,Park, Gil H,Son, Sang W The Society for Investigative Dermatology, Inc 2013 The Journal of investigative dermatology Vol.133 No.11
Thymic stromal lymphopoietin (TSLP) may have a key role in the initiation and maintenance of allergic inflammatory diseases, including atopic dermatitis. The present study revealed that UVB radiation exposure could induce TSLP expression in human keratinocytes and a human skin equivalent model. In addition, we investigated the regulatory mechanism of UVB-induced TSLP expression in keratinocytes. TSLP expression was upregulated by transfection with pcDNA3–hypoxia-inducible factor (HIF)-1α (P402A and P564A), which stably expresses HIF-1α protein. UVB-induced TSLP induction in keratinocytes was suppressed in the treatment of mitogen-activated protein kinase inhibitors or small interfering RNAs against HIF-1α. The results of chromatin immunoprecipitation assays indicate the direct involvement of HIF-1α in UVB-mediated TSLP induction. Taken together, these findings indicate that UVB exposure may increase TSLP expression through a HIF-1α-dependent mechanism via the c-JUN N-terminal kinase and extracellular signal-regulated kinase pathways in human keratinocytes. Our data showed that UVB-induced TSLP might increase secretion of the T-helper type 2–attracting chemokine (c–c motif) ligand 17 by human dendritic cells. The present study suggests an important role of HIF-1α in UVB-mediated immune response in keratinocytes.
정전 용량형 SP4T RF MEMS 스위치 구동용 4채널 승압 DC-DC 컨버터
장연수(Yeonsu Jang),김현철(Hyeon Cheol Kim),김수환(Suhwan Kim),전국진(Kukjin Chun) 대한전자공학회 2009 電子工學會論文誌-SD (Semiconductor and devices) Vol.46 No.2
본 논문에서는 전하 펌프(charge pump) 방식의 전압 더블러(voltage doubler) 구조를 이용한 4채널 DC-DC 컨버터 개발을 소개한다. 무선 통신 트랜시버 내부에 위치하는 FEM(Front End Module)에서의 사용을 목표로 연구 개발 중인 정전 용량형 SP4T RF MEMS 스위치 구동용 DC-DC 컨버터를 개발하였다. 소비 전력이 적으며 작은 면적을 차지하는 전하 펌프 구조와 10㎒ 스위칭 주파수를 이용하여 3.3V에서 11.3±0.1V, 12.4±0.1V, 14.1±0.2V로 승압한다. 전압 레벨 변환기(Voltage level shifter)를 이용하여 DC-DC 컨버터의 출력을 3.3V 신호로 선택적으로 온오프(on/off) 할 수 있으며 정전 용량형 MEMS 기기에 선택적으로 전달할 수 있도록 구현하였다. 칩 외부에 수동 소자를 추가하지 않고 칩 내부에 CMOS 공정 중에 제작된 저항과 커패시터만으로 원하는 출력을 낼 수 있도록 설계하였다. 전체 칩의 크기는 패드를 포함하여 2.8ⅹ2.1㎟이며 소비 전력은 7.52㎽, 7.82㎽, 8.61㎽이다. This paper presents a step up four channel DC-DC converter using charge pump voltage doubler structure. Our goal is to design and implement DC-DC converter for capacitive SP4T RF MEMS switch in front end module in wireless transceiver system. Charge pump structure is small and consume low power. 3.3V input voltage is boosted by DC-DC converter to 11.3±0.1V, 12.4±0.1V, 14.1±0.2V output voltage with 10㎒ switching frequency. By using voltage level shifter structure, output of DC-DC converter is selected by 3.3V four channel selection signals and transferred to capacitive MEMS devices. External passive devices are not used for driving DC-DC converter. The total chip area is 2.8ⅹ2.1㎟ including pads and the power consumption is 7.52㎽, 7.82㎽, 8.61㎽.
수동 소자 제작을 위한 양극 산화 알루미늄 설계 및 공정
장연수(Yeonsu Jang),김현철(Hyeon Cheol Kim),전국진(Kukjin Chun) 대한전자공학회 2007 대한전자공학회 학술대회 Vol.2007 No.11
In this paper, using aluminum anodizing technique aluminum sheet is selectively anodized to design and fabricate passive device on aluminum sheet. The proposed process is simpler than conventional via etching and filling process. Aluminum layer protected by photoresist is kept from anodizing, which acts as conductive layer. Unprotected aluminum layer is anodized and it acts as an isolated layer. After anodizing, porous anodized aluminum structure is filled with BCB(Benzo Cyclo Butene). The measurements show that resistance of 8㎟ via is 5.6Ω and dielectric constant of anodized aluminum is 2.03.
상용 PCB 공정을 이용한 RF MEMS 스위치와 DC-DC 컨버터의 이종 통합에 관한 연구
장연수(Yeonsu Jang),양우진(Woo-Jin Yang),전국진(Kukjin Chun) 대한전자공학회 2017 전자공학회논문지 Vol.54 No.6
본 논문에서는 듀로이드와 FR4를 기판으로 하는 재배선층 위에 정전 구동 방식의 RF MEMS 스위치와 승압 DC-DC 컨버터를 결합하는 연구를 진행하였다. 상용 PCB(Printed Circuit Board) 공정으로 듀로이드와 GCPW 전송 선로 조합의 재배선층과 FR4와 CPW 전송 선로 조합의 재배선층을 제작하였다. 상용 PCB 공정 특성에 의하여 전송 선로의 특성 임피던스는 56옴, 59옴 이었으며 이에 대하여 비교 분석하였다. 듀로이드 기판은 유전상수가 작고 두께가 얇으며 GCPW를 적용하였기 때문에 상대적으로 유전상수가 크고 두께가 두꺼우며 CPW 전송 선로를 적용한 FR4 기판보다 6GHz 대역에서 삽입 손실은 약 2.08dB, 반사 손실은 약 3.91dB, 신호 분리도는 약 3.33dB 우수한 것을 확인하였다. This paper presents a hetero-integration of electrostatically actuated RF MEMS Switch and step up DC-DC converter on a redistribution layer using commercial PCB process. RF characteristics of Duroid with 56Ω impedance GCPW transmission line and that of FR4 with 59Ω impedance CPW transmission line were analyzed. From DC to 6GHz, RF characteristics of Duroid were better than that of FR4, insertion loss was 2.08dB lower, return loss was 3.91dB higher, and isolation was 3.33dB higher.