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정운조,박계춘,정해덕 국립7개대학공동논문집간행위원회 2002 공업기술연구 Vol.2 No.-
Ti films were deposited onto 100×100 ㎜ alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T.∼400 ℃, annealing temperature of 100∼400 ℃ and sputtering gas pressure of 1.3∼3.0×10^-2 Torr. And the film were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties obtained by substrate temperature of ∼200 ℃, target-substrate distance of ∼14 ㎝ and sputtering pressure of 1.3∼1.7×10^-2 Torr. Also at that condition the most excellent adhesion was observed.
간세포암종에 대한 간동맥 화학색전술 후 발생한 급성호흡곤란증후군
조윤원,이정미,최자윤,유동훈,차라리,오혜원,김홍준,민현주,김현진,정운태,이옥재,하창윤,이선영 이화여자대학교 의과학연구소 2013 EMJ (Ewha medical journal) Vol.36 No.1
Transcatheter arterial chemoembolization (TACE) has become an effective alternative treatment strategy for patients with inoperable hepatocellular carcinoma (HCC). Although TACE is relatively safe, acute respiratory distress syndrome associated with pulmonary lipiodol embolism is a rare and potentially fatal complication. We report a rare case of acute respiratory distress syndrome after TACE for inoperable HCC. A 75-year-old man, with huge HCC in right lobe, was treated by TACE for the first time. Seven hours after uneventful TACE procedure, he felt dyspneic and his oxygen saturation recorded by pulse oximetry (SpO2) fell to 80% despite of applying non-rebreathing mask. He underwent mechanical ventilation with a protective ventilatory strategy. We experienced a case of acute respiratory distress syndrome after TACE for HCC.
정운조,김성,박계춘 木浦大學校 應用科學硏究院 2001 應用科學硏究誌 Vol.1 No.-
The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550nm. As Ti thickness increased from 760Å, the insertion loss of waveguide was decreased. But at Ti thickness 1500Å, mode sizes are widely broadened. This Ti thickness of below 1100Å and above 1500Å showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100Å-1500Å in our conditions. And for Ti thickness 1150Å, its propagation loss, horizontal/vertical mode sizes were measured 1.61dB/cm, 11.9/8.9㎛ for TM, 0.22dB/cm, 12.0/9.1㎛ for TE respectively.
정운조,김성,박계춘 국립7개대학공동논문집간행위원회 2001 공업기술연구 Vol.1 No.-
The optical near field patterns, propagation loss and mode sizes of x-cut Ti:LiNbO_3 optical waveguide which was fabricated by Ti-diffusion varying with Ti strip thickness in wet oxygen atmosphere were investigated and tested at optical wavelength 1550㎚. As Ti thickness increased from 760A˚, the insertion loss of waveguide was decreased. But at Ti thickness 1500A˚, mode sizes are widely broadened. The Ti thickness of below 1100A˚ and above 1500A˚ showed negative effects to propagation loss and fiber coupling. The best Ti thickness for fabricating low propagation loss and good fiber coupling was inferred to be between 1100A˚-1500A˚ in our conditions. And for Ti thickness 1150A˚, its propagation loss, horizontal/vertical mode sizes were measured 1.61㏈/㎝, 11.9/8.9㎛ for TM, 0.22㏈/㎝, 12.0/9.1㎛ for TE respectively.
김성렬,조영일,이해운,이정연,안해련,송종오,명승운 건국대학교 의과학연구소 2002 건국의과학학술지 Vol.12 No.-
Gitelman's syndrome is a rare disorder with a characteristic set of metabolic abnormalities. These include hypokalemia, metabolic alkalosis, hypocalciuria and hypomagnesemia. The clinical manifestations of Gitelman's syndrome are very similar with those of Bartter's syndrome and diuretic abuse. Gitelman' syndrome and Bartter's syndrome can be distinguished by renal clearance study after administration of furosemide and thiazide, since the primary defect in each of these disorders is an impairment in sodium reabsorption in the distal tubule and loop of Henle, respectively. Pseudo-Bartter's syndrome due to diuretic abuse can be distinguished by history of diuretic use and a positive urine assay for diuretics. We have experienced a case of pseudo-Gitelman's syndrome in 56-year old woman with unexplained hypokalemic metabolic alkalosis, hypocalciuria, and hypomagnesemia. The patient denied ingestion of diuretic medication. The results of renal clearance study using furosemide and thiazide in this case suggested the presence of the primary defect of sodium reabsorption in the distal tubule rather than in the loop of Henle. These clinical and laboratory findings were consistent with those of Gitelman's syndrome. But, this case was confirmed as pseudo-Gitelman's syndrome since diuretics were detected by a urine assay for diuretics. Furosemide and hydrochlorothiazide were contained in the pill that she had been taking due to constipation. Herein, we report the case of pseudo-Gitelman's syndrome by abuse of cathartics containig diuretics presented as Gitelman's syndrome in renal clearance study.
Visible Light-Responsive Titanium Dioxide Thin Film Prepared by Reactive Sputtering
Jeong, Woon-Jo,Moon, In-Seob,Cho, Soon-Kye,Yang, Hyeon-Hun,Park, Gye-Choon,Gu, Hal-Bon,Kim, Ki-Joong,Ahn, Ho-Geun American Scientific Publishers 2011 Journal of nanoscience and nanotechnology Vol.11 No.2
<P>TiO2 is a wide band-gap semiconductor (3.4 eV) and can only absorb about 5% of sun light in the ultraviolet light region, which largely limits its practical applications because of the lower utility of sun light and quantum yield. In order to move the absorption edge of TiO2 films to visible spectrum range, we have made the impurity level within a band-gap of TiO2 thin film by introduction of oxygen vacancy. Oxygen-defected TiO2 photo-catalyst have prepared by reactive sputtering with the partial pressure of Ar:O2 = 76.7:23.3 approximately 98.5:1.5 ratios. As a result, we could have the impurity level of about 2.75 eV on condition that oxygen partial pressure is 2.9%. And the photocatalytic activity was realized at 400 nm wavelength.</P>
Jeong, Woon-Jo,Ahn, Ho-Geun,Kim, Young-Jun,Yang, Hyeon-Hun,Park, Gye-Choon The Korean Institute of Electrical and Electronic 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
$CuInSe_2$ thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the $CuInSe_2$, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from $200\;^{\circ}C$ to $350\;^{\circ}C$ at intervals of $50\;^{\circ}C$.
Woon-Jo JEONG,Gye-Choon PARK 한국물리학회 2004 THE JOURNAL OF THE KOREAN PHYSICAL SOCIETY Vol.45 No.3
Single-phase CuInS2 thin film with a highest diffraction peak (112) at a diffraction angle (2) of 27.7 was well made by the SEL method at an annealing temperature of 250 C and annealing time of 60 min in a vacuum of 10က3 Torr or in S ambience for 1 hour. The peak of diffraction intensity at Miller Index (112) of CuInS2 thin film annealed in S ambience was a little higher, about 11 % than in vacuum. Single-phase CuInS2 thin films were prepared from 0.85 to 1.26 Cu/In composition ratio, and the sulfur composition ratios of CuInS2 thin films fabricated in S ambience were all over 50 atom %. Also, when the Cu/In composition ratio was 1.03, CuInS2 thin film with chalcopyrite structure had the highest XRD peak (112). The lattice constant a and grain size of the thin film in S ambience were a little larger than those in vacuum. The films in S ambience were all p-conduction type with resistivities of around 10က1 cm.
The Properties of CuInSe2 Thin Films by DC/RF Magnetron Sputtering and Thermal Evaporation Method
Woon-Jo Jeong,Ho-Geun Ahn,Young-Jun Kim,Hyeon-Hun Yang,Gye-Choon Park 한국전기전자재료학회 2007 Transactions on Electrical and Electronic Material Vol.8 No.2
CuInSe2 thin film were prepared in order to clarify optimum conditions for growth of the thin film depending upon process, and then by changing a number of deposition conditions and heat treatment conditions variously, structural and electrical characteristics were measured. Thereby, optimum process variables were derived. For the manufacture of the CuInSe2, Cu, In and Se were deposited in the named order. Among them, Cu and In were deposited by using the sputtering method in consideration of their adhesive force to the substrate, and the DC/RF power was controlled so that the composition of Cu and In might be 1:1, while the annealing temperature having an effect on the quality of the thin film was changed from 200 ℃ to 350 ℃ at intervals of 50 ℃.